公开(公告)号：US11658039B2

公开(公告)日：2023-05-23

申请号：US17370705

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Kim ,  Nam Kyun Kim ,  Sungjun Ann ,  Myungsun Choi ,  Dougyong Sung ,  Seungbo Shim

IPC: H01L21/311 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/6833 ,  H01J2237/3347

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.

公开(公告)号：US11439012B2

公开(公告)日：2022-09-06

申请号：US17091349

申请日：2020-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junghoon Park ,  Seungbo Shim ,  Seunggoo Kang ,  Seockkeun Han ,  Dongil Son

IPC: H05K1/18 ,  H05K1/14 ,  H05K1/11

Abstract: Provided is an electronic device. The electronic device may include a housing; a first printed circuit board (PCB) disposed in an internal space of the housing and including a plurality of first conductive terminals; a second PCB arranged parallel to the first PCB in the internal space, and including a plurality of second conductive terminals; and an interposer disposed between the first PCB and the second PCB to electrically connect the first PCB and the second PCB, the interposer including: a dielectric substrate including a first substrate surface facing the first PCB, a second substrate surface facing the second PCB, and a substrate side surface surrounding a space between the first substrate surface and the second substrate surface; a plurality of conductive vias formed to penetrate from the first substrate surface of the dielectric substrate to the second substrate surface, and electrically connecting the plurality of first conductive terminals to the plurality of second conductive terminals; and a first conductive pattern formed from at least a portion of the substrate side surface to the first PCB, wherein the first conductive pattern may be electrically connected to a first conductive pad formed on the first PCB and electrically connected to the at least one first electrical element.

公开(公告)号：US11367597B2

公开(公告)日：2022-06-21

申请号：US16259185

申请日：2019-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwoo Lee ,  Youngjin Noh ,  Dowon Kim ,  Donghyeon Na ,  Seungbo Shim

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: An electrostatic chuck includes a chuck base having a first hole, an upper plate provided on the chuck base, the upper plate having a second hole aligned with the first hole, and an adhesive layer attaching the upper plate to the chuck base, the adhesive layer having a thickness that is less than a diameter of the first hole and equal to a diameter of the second hole.

公开(公告)号：US11075089B2

公开(公告)日：2021-07-27

申请号：US16812953

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong Park ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L27/11582 ,  H01L49/02 ,  H01J37/32

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US12244749B2

公开(公告)日：2025-03-04

申请号：US17992333

申请日：2022-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hankon Kim ,  Junghyung Kim ,  Daehee Park ,  Junkyu Park ,  Dongil Son ,  Jaehoon Song ,  Seungbo Shim ,  Duhoon Jung ,  Myungkyoon Chung

IPC: G06F3/01 ,  H02K7/14 ,  H04M1/02

Abstract: An electronic device is provided. The electronic device comprising a flexible display includes a first area and a second area extending from the first area, a motor module configured to move at least a part of the second area according to a driving state in the first state and the second state, and a processor electrically connected to the flexible display and the motor module. The processor identifies a characteristic value related to the motor module when being changed from the first state to the second state and controls the motor module such that an area exposed to the outside of the electronic device among the second area is changed based on the identified characteristic value.

公开(公告)号：US12222362B2

公开(公告)日：2025-02-11

申请号：US17747303

申请日：2022-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonbum Nam ,  Namkyun Kim ,  Seungbo Shim ,  Donghyeon Na ,  Naohiko Okunishi ,  Dongseok Han ,  Minyoung Hur ,  Byeongsang Kim ,  Kuihyun Yoon

IPC: G01N9/24 ,  H01Q1/40 ,  H01Q9/30

Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

公开(公告)号：US12210045B2

公开(公告)日：2025-01-28

申请号：US17591751

申请日：2022-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeongsang Kim ,  Dougyong Sung ,  Sungjin Kim ,  Yunhwan Kim ,  Inseok Seo ,  Seungbo Shim ,  Naohiko Okunishi ,  Minyoung Hur

IPC: G01R27/16 ,  C23C16/455 ,  C23C16/52 ,  H01L21/66 ,  H01L21/67 ,  H01L21/683

Abstract: An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

公开(公告)号：US12156326B2

公开(公告)日：2024-11-26

申请号：US17833184

申请日：2022-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungbo Shim ,  Junghoon Park ,  Jinyoung Bang

IPC: H05K1/02 ,  H05K1/11 ,  H05K1/14

Abstract: An electronic device includes: a first printed circuit board (PCB) including a first plate and a first hole formed in the first plate, a second PCB including a second plate, an interposer including a third plate positioned between the first plate and the second plate, a plurality of first vias connecting the first plate and the third plate, a plurality of second vias connecting the second plate and the third plate, and a first reinforcement portion positioned in the first hole to bond the first plate and the third plate.

公开(公告)号：US20240304420A1

公开(公告)日：2024-09-12

申请号：US18344307

申请日：2023-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Siyoung Koh ,  Hadong Jin ,  Namkyun Kim ,  Seungbo Shim ,  Sungyong Lim ,  Sungyeol Kim

IPC: H01J37/32 ,  G01R27/16

CPC classification number: H01J37/32183 ,  G01R27/16 ,  H01J37/32926 ,  H01J37/32935

Abstract: An apparatus for providing radio frequency (RF) power includes a load having a process chamber, a RF power generator configured to provide the RF power through a cable electrically connected to the load, and a reflected power controller configured to detect reflected power from the load in a delivery mode and configured to control the RF power according to the reflected power that was detected.

公开(公告)号：US12014905B2

公开(公告)日：2024-06-18

申请号：US17380806

申请日：2021-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Kyun Kim ,  Tae-Sun Shin ,  Deokjin Kwon ,  Donghyeon Na ,  Seungbo Shim ,  Sungyong Lim ,  Minjoon Kim ,  Jin Young Bang ,  Bongju Lee ,  Jinseok Lee ,  Sungil Cho ,  Chungho Cho

IPC: H01J37/32 ,  H01L21/26 ,  H01L21/683

CPC classification number: H01J37/32669 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32715 ,  H01L21/26 ,  H01L21/6831 ,  H01J2237/327

Abstract: A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.