Abstract:
An organometallic compound represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
Abstract:
An organometallic compound represented by Formula 1:2 wherein, in Formula 1, groups and variables are the same as described in the specification.
Abstract:
An organometallic compound represented by Formula 1: wherein in Formula 1, groups and variables are the same as described in the specification.
Abstract:
An organometallic compound, represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.
Abstract:
An organic light-emitting device including a first electrode, a second electrode facing the first electrode, and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer includes an emission layer, wherein the organic layer further includes i) an organometallic compound represented by Formula 1, and ii) at least one selected from a first compound represented by Formula 51, a second compound represented by Formula 61, a third compound represented by Formula 81, and a fourth compound represented by Formula 91, wherein Formulae 1, 51, 61, 81, and 91 are the same as described in the specification.
Abstract:
An organometallic compound represented by Formula 1: M(L1)n1(L2)n2 Formula 1 wherein in Formula 1, M, L1, L2, n1, and n2 are the same as described in the specification.
Abstract:
A condensed cyclic compound represented by Formula 1 wherein in Formula 1, groups X1 to X8, L11, L12, R11, R12 and variables a11, a12, b11, b12 are described in the specification.
Abstract:
Provided are an etching composition, a method of etching a metal-containing film by using the same, and a method of manufacturing a semiconductor device by using the same. The etching composition may include an oxidizing agent, a buffer, and a selective etching inhibitor. The selective etching inhibitor may include a first compound represented by Formula 1 and a second compound different from the first compound. The second compound may include a ring. The ring may be a pyrazole group, an imidazole group, a triazole group, or a tetrazole group, or the ring may be a pyrazole group, an imidazole group, or a triazole group, each condensed with a benzene group, a pyridine group, a pyrimidine group, a pyrazine group, a pyridazine group, or any combination thereof. A description of Formula 1 is provided in the present specification.
Abstract:
An etching composition may include an oxidizer, an ammonium salt, an aqueous solvent, and an accelerator. A method of etching a metal-containing film may be performed using the etching composition, and a method of manufacturing a semiconductor device may be performed using the etching composition.
Abstract:
An organometallic compound represented by Formula 1A: wherein, in Formula 1A, groups and variables are the same as described in the specification.