公开(公告)号：US11348760B2

公开(公告)日：2022-05-31

申请号：US16915437

申请日：2020-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Akira Koshiishi ,  Masato Horiguchi ,  Yongwoo Lee ,  Kyohyeok Kim ,  Dowon Kim ,  Yunhwan Kim ,  Youngjin Noh ,  Jongwoo Sun ,  Taeil Cho

IPC: H01J37/32 ,  H01L21/683

Abstract: A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.

公开(公告)号：US11264291B2

公开(公告)日：2022-03-01

申请号：US16822319

申请日：2020-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seeyub Yang ,  Jeongil Mun ,  Hyungjoo Lee ,  Kyoungsuk Kim ,  Kyeonghun Kim ,  Jongwoo Sun

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/67 ,  H01L21/311

Abstract: An etching apparatus includes a reaction chamber having an internal space, a fixing chuck disposed in the reaction chamber, an electrostatic chuck disposed on the fixing chuck and on which a wafer is placed, a focus ring surrounding the electrostatic chuck, and a sensor device configured to be transferred into or out of the reaction chamber and placed on the electrostatic chuck. The sensor device includes a body having a plate shape, and a sensor disposed on an upper surface of the body which senses whether the focus ring is worn.

公开(公告)号：US11251022B2

公开(公告)日：2022-02-15

申请号：US16871427

申请日：2020-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin Jeon ,  Dougyong Sung ,  Jongwoo Sun ,  Minkyu Sung ,  Kimoon Jung ,  Seongha Jeong ,  Ungyo Jung ,  Jewoo Han

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: A gas supply assembly for a substrate processing apparatus includes a gas introduction part, a gas distribution plate connected to the gas introduction part, the gas distribution plate including a plurality of through holes, and a shower head disposed under the gas distribution plate, the shower head including a plurality of distribution holes in fluid communication with the plurality of through holes. One through hole is in fluid communication with at least two distribution holes, and each of the plurality of distribution holes has a first diameter and a second diameter differing from each other in the shower head.

公开(公告)号：US11215506B2

公开(公告)日：2022-01-04

申请号：US17162665

申请日：2021-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyeonghun Kim ,  Jeongil Mun ,  Hyung Joo Lee ,  Jongwoo Sun

IPC: G01J3/443 ,  H01J37/32 ,  G01J3/28

Abstract: A substrate processing module includes a process chamber configured to perform a treatment process on a substrate; a transfer chamber provided on a first side of the process chamber, the substrate being transferred between the process chamber and the transfer chamber; an optical emission spectroscopy (OES) system provided on a second side of the process chamber and configured to monitor the process chamber; and a reference light source disposed in the transfer chamber and configured to emit a reference light to calibrate the OES system.

公开(公告)号：US10892145B2

公开(公告)日：2021-01-12

申请号：US16445423

申请日：2019-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Kyohyeok Kim ,  Jongwoo Sun ,  Dougyong Sung ,  Sung-Ki Lee ,  Jaehyun Lee

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/027 ,  H01J37/32 ,  H01J37/22 ,  G01N21/94

Abstract: A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light.