公开(公告)号：US11348760B2

公开(公告)日：2022-05-31

申请号：US16915437

申请日：2020-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Akira Koshiishi ,  Masato Horiguchi ,  Yongwoo Lee ,  Kyohyeok Kim ,  Dowon Kim ,  Yunhwan Kim ,  Youngjin Noh ,  Jongwoo Sun ,  Taeil Cho

IPC: H01J37/32 ,  H01L21/683

Abstract: A plasma processing apparatus includes a chamber, a lower and upper electrodes vertically spaced apart from each other in the chamber, a RF transmitting part connected to the lower electrode and configured to supply RF power to the lower electrode, a ground plate spaced downwardly from the lower electrode, and an insulating member laterally surrounding a cavity formed between the lower electrode and the ground plate. The cavity is isolated from a region under the ground plate by the ground plate.

公开(公告)号：US11367597B2

公开(公告)日：2022-06-21

申请号：US16259185

申请日：2019-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwoo Lee ,  Youngjin Noh ,  Dowon Kim ,  Donghyeon Na ,  Seungbo Shim

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: An electrostatic chuck includes a chuck base having a first hole, an upper plate provided on the chuck base, the upper plate having a second hole aligned with the first hole, and an adhesive layer attaching the upper plate to the chuck base, the adhesive layer having a thickness that is less than a diameter of the first hole and equal to a diameter of the second hole.