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公开(公告)号:US11954582B2
公开(公告)日:2024-04-09
申请号:US18085939
申请日:2022-12-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungju Ryu , Hyungjun Kim , Jae-Joon Kim
Abstract: Disclosed is a neural network accelerator including a first bit operator generating a first multiplication result by performing multiplication on first feature bits of input feature data and first weight bits of weight data, a second bit operator generating a second multiplication result by performing multiplication on second feature bits of the input feature data and second weight bits of the weight data, an adder generating an addition result by performing addition based on the first multiplication result and the second multiplication result, a shifter shifting a number of digits of the addition result depending on a shift value to generate a shifted addition result, and an accumulator generating output feature data based on the shifted addition result.
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22.
公开(公告)号:US11946154B2
公开(公告)日:2024-04-02
申请号:US17126902
申请日:2020-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyungjun Kim , Chan Kwak , Takayoshi Sasaki , Yasuo Ebina , Changsoo Lee , Dohwon Jung , Giyoung Jo , Takaaki Taniguchi
CPC classification number: C30B1/023 , C03C17/001 , C03C17/23 , C04B2235/3258 , C04B2235/768
Abstract: Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).
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23.
公开(公告)号:US11737347B2
公开(公告)日:2023-08-22
申请号:US17034054
申请日:2020-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Byunghwa Seo , YongChurl Kim , Hyungjun Kim , Yong Joo Lee
IPC: H10K85/10 , C09K11/66 , C08L39/08 , C01G21/00 , C08L25/06 , B05D3/10 , C09K11/02 , C09D125/08 , C09D139/08 , H10K50/11
CPC classification number: H10K85/141 , B05D3/107 , C01G21/006 , C08L25/06 , C08L39/08 , C09D125/08 , C09D139/08 , C09K11/02 , C09K11/664 , C09K11/665 , H10K50/11
Abstract: A thin film includes a luminescent compound represented by Formula 1 and a random copolymer, wherein the random copolymer includes a first repeating unit including at least one aromatic ring, and a second repeating unit including a heteroatom including at least one lone pair of electrons,
[A]n[Q]m[X]l Formula 1
wherein, in Formula 1,
A is a monovalent organic cation, a monovalent inorganic cation, or a combination thereof,
Q is a divalent metal cation, a divalent metalloid cation, or a combination thereof,
X is at least one monovalent halogen ion,
n is an integer from 1 to 3,
m is an integer from 1 to 2, and
l is an integer from 1 to 5.-
公开(公告)号:US11521046B2
公开(公告)日:2022-12-06
申请号:US16170081
申请日:2018-10-25
Inventor: Sungho Kim , Jinseok Kim , Yulhwa Kim , Jaejoon Kim , Dusik Park , Hyungjun Kim
Abstract: A method of performing operations on a plurality of inputs and a same kernel using a delay time by using a same processor, and a neural network device thereof are provided, the neural network device includes input data including a first input and a second input, and a processor configured to obtain a first result by performing operations between the first input and a plurality of kernels, to obtain a second result by performing operations between the second input, which is received at a time delayed by a first interval from a time when the first input is received, and the plurality of kernels, and to obtain output data using the first result and the second result. The neural network device may include neuromorphic hardware and may perform convolutional neural network (CNN) mapping.
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公开(公告)号:US20220348599A1
公开(公告)日:2022-11-03
申请号:US17592075
申请日:2022-02-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ohyun Kwon , Sangdong Kim , Hyungjun Kim , Virendra Kumar RAI , Bumwoo Park , Myungsun Sim , Jeoungin Yi , Yongsuk Cho , Byoungki Choi , Jongwon Choi
IPC: C07F15/00
Abstract: An organometallic compound represented by Formula 1: M1(Ln1)n1(Ln2)n2 Formula 1 wherein M1 is a transition metal, Ln1 is a ligand represented by Formula 1-1, Ln2 is a bidentate ligand, n1 is 1, 2, or 3, and n2 is 0, 1, or 2, wherein X1, X2, X11 to X14, Y1, R10, R20, ring CY2, b10, and b20 are as defined herein, and wherein * and *′ each indicate a binding site to M1.
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公开(公告)号:US20220190259A1
公开(公告)日:2022-06-16
申请号:US17380666
申请日:2021-07-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Bumwoo Park , Ohyun Kwon , Virendra Kumar RAI , Hyungjun Kim , Myungsun Sim , Byoungki Choi , Yasushi KOISHIKAWA
Abstract: An organometallic compound, represented by Formula 1: M1(Ln1)n1(Ln2)n2 Formula 1 wherein, M1 is a transition metal, Ln1 is a ligand represented by Formula 1A, Ln2 is a ligand represented by Formula 1B, n1 is 0, 1, or 2, and n2 is 1, 2, or 3, wherein * and *′ each indicate a binding site to Mt, and CY1, CY2, R1, R2, R10, R20, X1, X2, Y1 to Y8, L1, Ar1, b10, b20, a1, and k1 are each as described herein.
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27.
公开(公告)号:US20210284811A1
公开(公告)日:2021-09-16
申请号:US17034054
申请日:2020-09-28
Applicant: Samsung Electronics Co., Ltd.
Inventor: Byunghwa Seo , YongChurl Kim , Hyungjun Kim , Yong Joo Lee
Abstract: A thin film includes a luminescent compound represented by Formula 1 and a random copolymer, wherein the random copolymer includes a first repeating unit including at least one aromatic ring, and a second repeating unit including a heteroatom including at least one lone pair of electrons, [A]n[Q]m[X]l Formula 1 wherein, in Formula 1, A is a monovalent organic cation, a monovalent inorganic cation, or a combination thereof, Q is a divalent metal cation, a divalent metalloid cation, or a combination thereof, X is at least one monovalent halogen ion, n is an integer from 1 to 3, m is an integer from 1 to 2, and l is an integer from 1 to 5.
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公开(公告)号:US10937857B2
公开(公告)日:2021-03-02
申请号:US16541883
申请日:2019-08-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyungjun Kim , Doh Won Jung , Chan Kwak , Ki Hong Kim , Daejin Yang , Chang Soo Lee
IPC: H01L49/02
Abstract: A stacked structure including: a single crystal substrate and, single crystal material on the single crystal substrate, wherein the single crystal material has a same crystallographic orientation as a crystallographic orientation of the single crystal substrate. Also a method of forming the stacked structure, a ceramic electronic component, and a device.
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公开(公告)号:US20250062152A1
公开(公告)日:2025-02-20
申请号:US18804824
申请日:2024-08-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyungjun Kim , Cheol-Hee Ahn , Yooseon Hong
IPC: H01L21/683 , C09J4/00 , C09J7/38 , H01L23/00
Abstract: In a dicing film, an adhesive strength of an adhesive layer constituting the dicing film may sufficiently decrease after heat treatment, and a semiconductor die may be easily separated from the dicing film. Accordingly, the effect of improving pickup performance of the semiconductor die may be obtained.
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公开(公告)号:US20240321940A1
公开(公告)日:2024-09-26
申请号:US18423647
申请日:2024-01-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyungjun Kim , Sangwuk Park , Hyunchul Yoon , Jungpyo Hong
IPC: H01G4/30
CPC classification number: H01L28/60
Abstract: A semiconductor device including a substrate and a capacitor structure arranged on the substrate. The capacitor structure includes a plurality of lower electrodes extending in a vertical direction perpendicular to a surface of the substrate and spaced apart from each other, supporters arranged between the plurality of lower electrodes, an upper electrode spaced apart from each of the plurality of lower electrodes, a dielectric layer arranged between each of the lower electrodes and the upper electrode, and a plurality of particles each in contact with the dielectric layer and arranged between each of the plurality of lower electrodes and the upper electrode.
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