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公开(公告)号:US11946154B2
公开(公告)日:2024-04-02
申请号:US17126902
申请日:2020-12-18
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyungjun Kim , Chan Kwak , Takayoshi Sasaki , Yasuo Ebina , Changsoo Lee , Dohwon Jung , Giyoung Jo , Takaaki Taniguchi
CPC classification number: C30B1/023 , C03C17/001 , C03C17/23 , C04B2235/3258 , C04B2235/768
Abstract: Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).