公开(公告)号：US20230076780A1

公开(公告)日：2023-03-09

申请号：US18054814

申请日：2022-11-11

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Min CHO ,  Tae Wook KANG ,  Tae Sung KIM ,  Dae Won CHOI ,  Sang Gab KIM

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device includes a first base, a pixel electrode on the first base, a pixel defining layer having an opening that at least partially exposes the pixel electrode, a light emitting layer on the pixel electrode, an auxiliary electrode on the same layer as the pixel electrode, a partition wall on the auxiliary electrode that at least partially exposes a side surface of the auxiliary electrode, an organic layer on the partition wall, and a common electrode continuously arranged on the light emitting layer and the organic layer, wherein a side surface of the partition wall has a reverse-tapered shape, and the common electrode contacts the side surface of the auxiliary electrode.

公开(公告)号：US20220229322A1

公开(公告)日：2022-07-21

申请号：US17713715

申请日：2022-04-05

Applicant: Samsung Display Co., LTD.

Inventor： Seon-Il KIM ,  Sung Won CHO ,  Sang Gab KIM ,  Su Bin BAE ,  Yu-Gwang JEONG ,  Dae Won CHOI

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L51/56 ,  H01L51/52 ,  H01L27/32

Abstract: A display device includes a thin film transistor on a base substrate and a signal wiring electrically connected to the thin film transistor. The signal wiring includes a main conductive layer including copper, and a capping layer including titanium the capping layer overlapping a portion of an upper surface of the main conductive layer. The signal wiring has a taper angle in a range of about 70° to about 90°. A thickness of the capping layer is in a range of about 100 Å to about 300 Å, and a thickness of the main conductive layer is in a range of about 1,000 Å to about 20,000 Å.

公开(公告)号：US20220157920A1

公开(公告)日：2022-05-19

申请号：US17591268

申请日：2022-02-02

Applicant: Samsung Display Co., Ltd.

Inventor： Sukyoung YANG ,  Sangwoo SOHN ,  Dokeun SONG ,  Dongmin LEE ,  Sangwon SHIN ,  Hyuneok SHIN ,  Kyeong Su KO ,  Sang Gab KIM ,  Joongeol LEE

IPC: H01L27/32

Abstract: A conductive line for a display device may include a first layer including aluminum (Al) or an aluminum alloy, a second layer disposed on the first layer, the second layer including titanium nitride (TiNx), and a third layer disposed on the second layer, the third layer including titanium (Ti) and having a multilayer structure including a plurality of stacked sub-layers.

公开(公告)号：US20220085341A1

公开(公告)日：2022-03-17

申请号：US17308671

申请日：2021-05-05

Applicant: Samsung Display Co., LTD.

Inventor： Dae Soo KIM ,  Sang Gab KIM ,  Yun Jong YEO ,  Ju Hee LEE ,  Soo Beom JO ,  Dae Won CHOI

IPC: H01L51/56 ,  H01L27/32 ,  H01L51/00 ,  H01J37/32

Abstract: An etching device includes a chamber; a stage disposed in the chamber and on which a target substrate is loaded; a gas distribution unit disposed to face the stage in the chamber; a plurality of plasma generation modules disposed above the chamber; a gas supply unit that supplies gas into the chamber; a gas line connecting the gas supply unit and the plurality of plasma generation modules; and a plurality of gas inlet pipes each including an end connected to the plasma generation module and another end connected to the gas distribution unit.

公开(公告)号：US20210384287A1

公开(公告)日：2021-12-09

申请号：US17445471

申请日：2021-08-19

Applicant: Samsung Display Co., Ltd. ,  POSTECH ACADEMY-INDUSTRY FOUNDATION

Inventor： Sang Gab KIM ,  Hyun Min CHO ,  Tae Sung KIM ,  Yu-Gwang JEONG ,  Su Bin BAE ,  Jin Seock KIM ,  Sang Gyun KIM ,  Hyo Min KO ,  Kil Won CHO ,  Hansol LEE

IPC: H01L27/32

Abstract: An manufacturing method of a display device may include the following steps: forming a transistor on a substrate; forming an insulating layer on the transistor; forming a conductive layer including silver on the insulating layer; forming a photosensitive member on the conductive layer; forming an electrode of a light-emitting element by etching the conductive layer; performing plasma treatment on a structure that comprises the electrode, the plasma treatment using a gas including a halogen; and removing a product that is resulted from the plasma treatment.

公开(公告)号：US20210036073A1

公开(公告)日：2021-02-04

申请号：US16838956

申请日：2020-04-02

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Min CHO ,  Tae Wook KANG ,  Tae Sung KIM ,  Dae Won CHOI ,  Sang Gab KIM

IPC: H01L27/32 ,  H01L51/52

Abstract: A display device includes a first base, a pixel electrode on the first base, a pixel defining layer having an opening that at least partially exposes the pixel electrode, a light emitting layer on the pixel electrode, an auxiliary electrode on the same layer as the pixel electrode, a partition wall on the auxiliary electrode that at least partially exposes a side surface of the auxiliary electrode, an organic layer on the partition wall, and a common electrode continuously arranged on the light emitting layer and the organic layer, wherein a side surface of the partition wall has a reverse-tapered shape, and the common electrode contacts the side surface of the auxiliary electrode.

公开(公告)号：US20200235196A1

公开(公告)日：2020-07-23

申请号：US16704437

申请日：2019-12-05

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Min LEE ,  Sang Woo SOHN ,  Do Keun SONG ,  Sang Won SHIN ,  Hyun Eok SHIN ,  Su Kyoung YANG ,  Kyeong Su KO ,  Sang Gab KIM ,  Joon Geol LEE

IPC: H01L27/32 ,  H01L27/12

Abstract: Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.

公开(公告)号：US20190172819A1

公开(公告)日：2019-06-06

申请号：US16027960

申请日：2018-07-05

Applicant: Samsung Display Co., Ltd.

Inventor： Su Bin BAE ,  Yu Gwang JEONG ,  Shin Il CHOI ,  Joon Geol LEE ,  Sang Gab KIM

IPC: H01L25/16 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L33/54

Abstract: A light emitting diode device includes a thin film transistor substrate having a plurality of light emitting areas, a first diode electrode and a second diode electrode on the thin film transistor substrate, a first passivation pattern between the first diode electrode and the second diode electrode, a plurality of micro light emitting diodes on the first passivation pattern, a first bridge pattern on the micro light emitting diodes and electrically connecting the first diode electrode to the micro light emitting diodes, and a second bridge pattern on the first bridge pattern and electrically connecting the second diode electrode to the micro light emitting diodes, wherein each sidewall of each of the micro light emitting diodes and each sidewall of the first passivation pattern form a same plane.

公开(公告)号：US20190081088A1

公开(公告)日：2019-03-14

申请号：US16124356

申请日：2018-09-07

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Min CHO ,  Shin Il CHOI ,  Kyeong Su KO ,  Sang Gab KIM ,  Joon Geol LEE

IPC: H01L27/12 ,  H01L29/45 ,  H01L21/3213 ,  H01L29/786

Abstract: A display device includes: a substrate; first and second transistors provided on the substrate to be spaced apart from each other, the first and second transistors being electrically connected to each other; and a display unit electrically connected to the first transistor, wherein the first transistor includes a first semiconductor layer including crystalline silicon, a first gate electrode, a first source electrode, and a first drain electrode, wherein the second transistor includes a second semiconductor layer including an oxide semiconductor, a second gate electrode, a second source electrode, and a second drain electrode, wherein each of the second source electrode and the second drain electrode includes a first layer that includes molybdenum and is provided on the second semiconductor layer, a second layer that includes aluminum and is provided on the first layer, and a third layer that includes titanium and is provided on the second layer.

公开(公告)号：US20170317104A1

公开(公告)日：2017-11-02

申请号：US15380596

申请日：2016-12-15

Applicant: Samsung Display Co., Ltd.

Inventor： Yu-Gwang JEONG ,  Hyun Min CHO ,  Su Bin BAE ,  Shin II CHOI ,  Sang Gab KIM

IPC: H01L27/12 ,  H01L21/311 ,  H01L27/32 ,  G02F1/1368

CPC classification number: H01L27/124 ,  G02F1/1368 ,  G02F2201/123 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/1218 ,  H01L27/1288 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/41733

Abstract: A transistor array panel is manufactured by a method that reduces or obviates the need for highly selective etching agents or complex processes requiring multiple photomasks to create contact holes. The panel includes: a substrate; a buffer layer positioned on the substrate; a semiconductor layer positioned on the buffer layer; an intermediate insulating layer positioned on the semiconductor layer; and an upper conductive layer positioned on the intermediate insulating layer, wherein the semiconductor layer includes a first contact hole, the intermediate insulating layer includes a second contact hole positioned in an overlapping relationship with the first contact hole, and the upper conductive layer is in contact with a side surface of the semiconductor layer in the first contact hole.