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21.发明申请公开(公告)号：US20240414926A1
公开(公告)日：2024-12-12
申请号：US18813539
申请日：2024-08-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wooyoung YANG , Bonwon KOO , Chungman KIM , Kwangmin PARK , Hajun SUNG , Dongho AHN , Changseung LEE , Minwoo CHOI
Abstract: A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
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公开(公告)号：US20190305049A1
公开(公告)日：2019-10-03
申请号：US16105259
申请日：2018-08-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungbae PARK , Wenxu XIANYU , Bonwon KOO , Takkyun RO , Changseung LEE
IPC: H01L27/30 , H01L51/44 , H01L27/146
Abstract: Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.
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公开(公告)号：US20190086579A1
公开(公告)日：2019-03-21
申请号：US16020434
申请日：2018-06-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaekwan KIM , Jeongyub LEE , Seunghoon HAN , Yongsung KIM , Byunghoon NA , Jangwoo YOU , Changseung LEE
Abstract: Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.
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公开(公告)号：US20180188559A1
公开(公告)日：2018-07-05
申请号：US15632640
申请日：2017-06-26
Applicant: SAMSUNG ELECTRONICS CO., LTD. , IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
Inventor： Kiyeon YANG , Youngsun CHOI , Seokho SONG , Jaewoong YOON , Choloong HAN , Yongsung KIM , Jeongyub LEE , Changseung LEE
CPC classification number: G02F1/093 , G02B6/12007 , G02B6/2746 , G02B6/2935 , G02B6/4209 , G02B2006/12157 , G02F1/0955 , G02F1/31 , G02F2203/04 , G02F2203/06
Abstract: Nonreciprocal optical transmission devices and optical apparatuses including the nonreciprocal optical transmission devices are provided. A nonreciprocal optical transmission device includes an optical input portion, an optical output portion, and an intermediate connecting portion interposed between the optical input portion and the optical output portion, and comprising optical waveguides. A complex refractive index of any one or any combination of the optical waveguides changes between the optical input portion and the optical output portion, and a transmission direction of light through the nonreciprocal optical transmission device is controlled by a change in the complex refractive index.
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25.发明申请DEVICE INCLUDING VERTICALLY ALIGNED TWO-DIMENSIONAL MATERIAL AND METHOD OF FORMING A VERTICALLY ALIGNED TWO-DIMENSIONAL MATERIAL 有权包括垂直对准的二维材料的装置和形成垂直对准的二维材料的方法公开(公告)号：US20170003248A1
公开(公告)日：2017-01-05
申请号：US14972873
申请日：2015-12-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiyeon YANG , Changseung LEE , Namjeong KIM , Yeonhee KIM
IPC: G01N27/414 , H01L21/3065 , H01L29/786 , H01L21/02
CPC classification number: G01N27/4141 , C30B25/04 , C30B29/46 , C30B29/60 , H01L21/02568 , H01L21/0259 , H01L21/02614 , H01L21/0262 , H01L21/02631 , H01L21/3065 , H01L29/0665 , H01L29/24 , H01L29/66969 , H01L29/778 , H01L29/7851 , H01L29/78681 , H01L29/78684 , H01L29/78696
Abstract: A transistor includes a substrate, a two-dimensional material including at least one layer that is substantially vertically aligned on the substrate such that an edge of the layer is on the substrate and the layer extends substantially vertical to the substrate, a source electrode and a drain electrode connected to opposite ends of the two-dimensional material, a gate insulation layer on the two-dimensional material between the source electrode and the drain electrode, and a gate electrode on the gate insulation layer. Each layer includes a semiconductor having a two-dimensional crystal structure.
Abstract translation: 晶体管包括衬底，二维材料，其包括在衬底上基本上垂直对准的至少一层，使得该层的边缘在衬底上，并且该层基本垂直于衬底延伸，源电极和 连接到二维材料的相对端的漏电极，在源电极和漏电极之间的二维材料上的栅极绝缘层，以及栅极绝缘层上的栅电极。 每个层包括具有二维晶体结构的半导体。
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Patent Agency Ranking
26.发明申请APPARATUS FOR ANALYZING ACTIVE MATERIAL OF SECONDARY BATTERY AND METHOD OF ANALYZING ACTIVE MATERIAL USING THE SAME 有权用于分析二次电池活性材料的装置及使用其分析活性材料的方法公开(公告)号：US20160054267A1
公开(公告)日：2016-02-25
申请号：US14734229
申请日：2015-06-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jooho LEE , Changseung LEE , Jeoyoung SHIM , Sunghee LEE , Woosung JEON
CPC classification number: G01N29/12 , G01N29/2437 , G01N2291/0256 , G01N2291/2697
Abstract: An apparatus for analyzing an active material of a secondary battery may include: a first electrode; a piezoelectric layer on the first electrode; a second electrode on the piezoelectric layer, configured to provide a voltage having a polarity opposite to a polarity of the first electrode; and/or an insulating layer on the second electrode and including a through hole exposing a portion of the second electrode. A method of analyzing an active material of a secondary battery may include: disposing an active material in a through hole of a bulk acoustic resonator, in which a first electrode, a piezoelectric layer, a second electrode, and an insulating layer are stacked; measuring a resonance frequency of the resonator by applying an electric signal to the first and second electrodes of the resonator; and/or measuring a weight of the active material in the through hole, based on the measured resonance frequency.
Abstract translation: 用于分析二次电池的活性材料的装置可以包括：第一电极; 第一电极上的压电层; 压电层上的第二电极，被配置为提供具有与第一电极的极性相反的极性的电压; 和/或第二电极上的绝缘层，并且包括暴露第二电极的一部分的通孔。 分析二次电池的活性物质的方法可以包括：将活性物质设置在堆叠有第一电极，压电层，第二电极和绝缘层的体声波谐振器的通孔中; 通过向谐振器的第一和第二电极施加电信号来测量谐振器的谐振频率; 和/或基于测量的共振频率来测量通孔中的活性材料的重量。
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公开(公告)号：US20250113746A1
公开(公告)日：2025-04-03
申请号：US18980759
申请日：2024-12-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kiyeon YANG , Dongho AHN , Changseung LEE
Abstract: A semiconductor apparatus may include a plurality of semiconductor unit devices. Each of the semiconductor unit devices may be arranged between a first insulating layer and a second insulating layer that are apart from each other in a direction normal to a substrate. Each of the semiconductor unit devices may include a selection device layer and a phase change material layer that extend side by side in a direction parallel to the substrate. The phase change material layer may have a superlattice-like structure. The phase change material layer may be arranged along a recess portion that is formed by the first insulating layer, the second insulating layer, and the selection device layer.
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公开(公告)号：US20240012178A1
公开(公告)日：2024-01-11
申请号：US18472662
申请日：2023-09-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaekwan KIM , Jeongyub LEE , Seunghoon HAN , Yongsung KIM , Byunghoon NA , Jangwoo YOU , Changseung LEE
CPC classification number: G02B1/002 , G02B5/1814
Abstract: Provided are meta-surface optical device and methods of manufacturing the same. The meta-surface optical device may include a meta-surface arranged on a region of a substrate and a light control member arranged around the meta-surface. The light control member may be arranged on or below the substrate. A material layer formed of the same material used to form the meta-surface may be disposed between the light control member and the substrate. Also, the meta-surface may be a first meta-surface arranged on an upper surface of the substrate, and a second meta-surface may be arranged on a bottom surface of the substrate. Also, the meta-surface may include a first meta-surface and at least one second meta-surface may formed on the first meta-surface, and the light control member may be arranged around the at least one second meta-surface.
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公开(公告)号：US20230088249A1
公开(公告)日：2023-03-23
申请号：US17717611
申请日：2022-04-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Wooyoung YANG , Segab KWON , Hajun SUNG , Dongho AHN , Changseung LEE , Minwoo CHOI
Abstract: Provided are a semiconductor device and a semiconductor apparatus. The semiconductor device may include a first electrode; a second electrode spaced apart from the first electrode; and a selection device layer including a chalcogen compound layer between the first electrode and the second electrode and a metal oxide doped in the chalcogen compound layer. In the semiconductor device, by doping the metal oxide, an off-current value (leakage current value) of the selection device layer may be reduced, and static switching characteristics may be implemented.
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公开(公告)号：US20230042262A1
公开(公告)日：2023-02-09
申请号：US17522197
申请日：2021-11-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minwoo CHOI , Bonwon KOO , Yongyoung PARK , Hajun SUNG , Dongho AHN , Kiyeon YANG , Wooyoung YANG , Changseung LEE
Abstract: Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.
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