公开(公告)号：US20180129105A1

公开(公告)日：2018-05-10

申请号：US15809569

申请日：2017-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young KIM ,  Yunhee KIM ,  Hoon SONG ,  Kanghee WON ,  Yeonhee KIM ,  Kideok BAE ,  Hongseok LEE

IPC: G02F1/1343 ,  G02F1/1337 ,  G02F1/1333 ,  G02F1/1345 ,  G02F1/137

Abstract: A liquid crystal light deflector includes a first electrode layer including a plurality of pattern electrodes arranged with a constant pitch in a first direction on a first substrate, a first alignment layer covering the first electrode layer and having a plurality of concave portions formed on an upper surface thereof and extending in parallel to a second direction perpendicular to the first direction, a liquid crystal layer including a plurality of liquid crystal molecules each having a long diameter substantially parallel to the concave portions on the first alignment layer, a second electrode layer, which is a common electrode, disposed on the liquid crystal layer, and a second substrate disposed on the second electrode layer.

公开(公告)号：US20230094482A1

公开(公告)日：2023-03-30

申请号：US17724861

申请日：2022-04-20

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Jeongyub LEE ,  Geunyoung YEOM ,  Heeju KIM ,  Jongwoo HONG ,  Yeonhee KIM ,  Kideok BAE ,  Haesoo BAE

IPC: G02B1/00 ,  G03F1/80

Abstract: A meta-optical device and a method of manufacturing a metasurface are provided. The meta-optical device includes a substrate and a nanostructure, wherein the nanostructure includes a first portion and a second portion that differ in at least one of a diameter and a period, wherein a ratio of an etch depth of the second portion to an etch depth of the first portion is about 0.9 to about 1.1, and the nanostructure includes at least one of sulfur, fluorine, and fluorocarbon.

公开(公告)号：US20170003248A1

公开(公告)日：2017-01-05

申请号：US14972873

申请日：2015-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Changseung LEE ,  Namjeong KIM ,  Yeonhee KIM

IPC: G01N27/414 ,  H01L21/3065 ,  H01L29/786 ,  H01L21/02

CPC classification number: G01N27/4141 ,  C30B25/04 ,  C30B29/46 ,  C30B29/60 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/3065 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7851 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: A transistor includes a substrate, a two-dimensional material including at least one layer that is substantially vertically aligned on the substrate such that an edge of the layer is on the substrate and the layer extends substantially vertical to the substrate, a source electrode and a drain electrode connected to opposite ends of the two-dimensional material, a gate insulation layer on the two-dimensional material between the source electrode and the drain electrode, and a gate electrode on the gate insulation layer. Each layer includes a semiconductor having a two-dimensional crystal structure.

Abstract translation: 晶体管包括衬底，二维材料，其包括在衬底上基本上垂直对准的至少一层，使得该层的边缘在衬底上，并且该层基本垂直于衬底延伸，源电极和 连接到二维材料的相对端的漏电极，在源电极和漏电极之间的二维材料上的栅极绝缘层，以及栅极绝缘层上的栅电极。 每个层包括具有二维晶体结构的半导体。