公开(公告)号：US20170003248A1

公开(公告)日：2017-01-05

申请号：US14972873

申请日：2015-12-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Changseung LEE ,  Namjeong KIM ,  Yeonhee KIM

IPC: G01N27/414 ,  H01L21/3065 ,  H01L29/786 ,  H01L21/02

CPC classification number: G01N27/4141 ,  C30B25/04 ,  C30B29/46 ,  C30B29/60 ,  H01L21/02568 ,  H01L21/0259 ,  H01L21/02614 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/3065 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7851 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: A transistor includes a substrate, a two-dimensional material including at least one layer that is substantially vertically aligned on the substrate such that an edge of the layer is on the substrate and the layer extends substantially vertical to the substrate, a source electrode and a drain electrode connected to opposite ends of the two-dimensional material, a gate insulation layer on the two-dimensional material between the source electrode and the drain electrode, and a gate electrode on the gate insulation layer. Each layer includes a semiconductor having a two-dimensional crystal structure.

Abstract translation: 晶体管包括衬底，二维材料，其包括在衬底上基本上垂直对准的至少一层，使得该层的边缘在衬底上，并且该层基本垂直于衬底延伸，源电极和 连接到二维材料的相对端的漏电极，在源电极和漏电极之间的二维材料上的栅极绝缘层，以及栅极绝缘层上的栅电极。 每个层包括具有二维晶体结构的半导体。

公开(公告)号：US20150371855A1

公开(公告)日：2015-12-24

申请号：US14721395

申请日：2015-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyeon YANG ,  Namjeong KIM ,  Haesung KIM

IPC: H01L21/04 ,  H01L21/67 ,  H01L29/16 ,  H01L21/306 ,  H01L21/3065

CPC classification number: H01L21/042 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/67115 ,  H01L29/1606 ,  H01L29/66015

Abstract: According to example embodiments, an apparatus for etching a two-dimensional material layer includes a stage configured to support an etching target including graphene on the stage, a light source configured to emit light having a wavelength that is shorter than a wavelength of visible light, a mask imprinted with a pattern for transferred onto the etching target, a fluid inlet configured to supply a fluid over the etching target, and a fluid outlet configured to absorb a residue and a reaction product after the fluid is supplied over the etching target using the fluid inlet.

Abstract translation: 根据示例性实施例，用于蚀刻二维材料层的设备包括：被配置为在舞台上支撑包括石墨烯的蚀刻靶的台，被配置为发射波长比可见光波长短的光的光源， 用于转印到蚀刻靶上的图案的掩模，被配置为在蚀刻对象上提供流体的流体入口和构造成吸收残留物的流体出口和在使用 流体入口。