Imaging device
    21.
    发明授权

    公开(公告)号:US11637147B2

    公开(公告)日:2023-04-25

    申请号:US17394091

    申请日:2021-08-04

    Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode. The third electrode overlaps the analog circuitry in a plan view, and in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the third electrode, no transistor of the digital circuitry is located directly below the third electrode.

    Image device including photoelectric conversion layer

    公开(公告)号:US10461130B2

    公开(公告)日:2019-10-29

    申请号:US15938374

    申请日:2018-03-28

    Abstract: An imaging device includes: a photoelectric converter including first and second electrodes, a photoelectric conversion layer therebetween, and an electron-blocking layer between the first electrode and the photoelectric conversion layer; and a signal detection circuit connected to the first electrode. The photoelectric converter is adapted to be applied with a voltage between the first and second electrodes. An electron-blocking material in the electron-blocking layer has an ionization potential higher than both a work function of a conducting material in the first electrode and an ionization potential of a photoelectric conversion material in the photoelectric conversion layer, which allows the photoelectric converter to have a range of the voltage within which a density of current passing between the first and second electrodes when light is incident on the photoelectric conversion layer is substantially equal to that when no light is incident. The range of the voltage is 0.5 V or more.

    Imaging device
    28.
    发明授权

    公开(公告)号:US12266667B2

    公开(公告)日:2025-04-01

    申请号:US18322621

    申请日:2023-05-24

    Abstract: An imaging device includes a photoelectric conversion layer that includes a first surface and a second surface opposite the first surface and that generates signal charge, at least one pixel electrode located on the first surface of the photoelectric conversion layer, a control electrode located on the first surface of the photoelectric conversion layer, a counter electrode located on the second surface of the photoelectric conversion layer and opposite the at least one pixel electrode and the control electrode, and a charge accumulator that is connected to the at least one pixel electrode and that accumulates the signal charge. There is a line segment connecting two points on the at least one pixel electrode to each other and overlapping the control electrode in plan view.

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