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公开(公告)号：US11777050B2
公开(公告)日：2023-10-03
申请号：US17238250
申请日：2021-04-23
Inventor： Shinichi Machida , Takeyoshi Tokuhara , Sanshiro Shishido
IPC: H01L31/112 , H10K30/35 , H01L31/0352
CPC classification number: H01L31/1129 , H01L31/035218 , H01L31/112 , H10K30/35
Abstract: An optical sensor includes: a photosensitive layer that absorbs incident light to generate a first carrier with a first polarity and a second carrier with a second polarity different from the first polarity; a channel layer that is electrically connected to the photosensitive layer and that conducts the first carrier that has moved from the photosensitive layer; a counter electrode facing the channel layer through the photosensitive layer; an insulating layer positioned between the photosensitive layer and the counter electrode; and a source electrode and a drain electrode each electrically connected to the channel layer.
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公开(公告)号：US12101949B2
公开(公告)日：2024-09-24
申请号：US17700941
申请日：2022-03-22
Inventor： Shinichi Machida , Katsuya Nozawa , Sanshiro Shishido
CPC classification number: H10K30/821 , H10K39/32 , H10K85/221
Abstract: A photoelectric conversion element includes: a first electrode; a second electrode; and a photoelectric conversion layer disposed between the first electrode and the second electrode and containing semiconducting carbon nanotubes and a first material that functions as a donor or an acceptor for the semiconducting carbon nanotubes. The semiconducting carbon nanotubes have light absorption characteristics including a first absorption peak at a first wavelength, a second absorption peak at a second wavelength shorter than the first wavelength, and a third absorption peak at a third wavelength shorter than the second wavelength. The first material is transparent to light in at least one wavelength range selected from the group consisting of a first wavelength range between the first wavelength and the second wavelength and a second wavelength range between the second wavelength and the third wavelength.
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公开(公告)号：US11233955B2
公开(公告)日：2022-01-25
申请号：US17173031
申请日：2021-02-10
Inventor： Shinichi Machida , Masashi Murakami , Takeyoshi Tokuhara , Masaaki Yanagida , Sanshiro Shishido , Manabu Nakata , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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公开(公告)号：US11081528B2
公开(公告)日：2021-08-03
申请号：US16891367
申请日：2020-06-03
Inventor： Takeyoshi Tokuhara , Shinichi Machida
Abstract: An imaging device having pixels, each pixel including: a photoelectric conversion unit including a first electrode, a second electrode, a photoelectric conversion layer between the first and second electrodes, and a hole-blocking layer between the first electrode and the photoelectric conversion layer. The photoelectric conversion unit is applied with a voltage between the first electrode and the second electrode. The photoelectric conversion unit has a characteristic, responsive to the voltage within a range from a first voltage to a second voltage, showing that a density of current passing between the first electrode and the second electrode when light is incident on the photoelectric conversion layer becomes substantially equal to that when no light is incident on the photoelectric conversion layer. The range from the first voltage to the second voltage includes 0V, and a difference between the first voltage and the second voltage is 0.5 V or more.
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公开(公告)号：US11277571B2
公开(公告)日：2022-03-15
申请号：US17136722
申请日：2020-12-29
Inventor： Kunio Nobori , Satoshi Sato , Takeo Azuma , Nobuhiko Wakai , Mitsuru Harada , Shinichi Machida , Masumi Izuchi
Abstract: An image generation device includes: a voltage generator that generates a plurality of voltages each having a different voltage value; an image capturer that includes an organic photoconductive film, and performs imaging every time each of the plurality of voltages is applied; a luminance data obtainer that obtains a plurality of luminance data items corresponding to the plurality of voltages applied, each of the plurality of luminance data items being obtained from the imaging performed by the image capturer; and a color image generator that generates a color image based on the plurality of luminance data items.
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Patent Agency Ranking
公开(公告)号：US10861904B2
公开(公告)日：2020-12-08
申请号：US16731328
申请日：2019-12-31
Inventor： Manabu Nakata , Masumi Izuchi , Shinichi Machida , Yasunori Inoue
Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter that converts incident light into electric charges. The photoelectric converter includes: a first electrode; a light-transmitting second electrode; a first photoelectric conversion layer disposed between the first electrode and the second electrode and containing a first material having an absorption peak at a first wavelength; and a second photoelectric conversion layer disposed between the first photoelectric conversion layer and the second electrode and containing a second material having an absorption peak at a second wavelength different from the first wavelength. The absolute value of the ionization potential of the first material is larger by at least 0.2 eV than the absolute value of the ionization potential of the second material.
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公开(公告)号：US10559629B2
公开(公告)日：2020-02-11
申请号：US16190363
申请日：2018-11-14
Inventor： Manabu Nakata , Masumi Izuchi , Shinichi Machida , Yasunori Inoue
Abstract: An imaging device includes at least one unit pixel cell including a photoelectric converter that converts incident light into electric charges. The photoelectric converter includes: a first electrode; a light-transmitting second electrode; a first photoelectric conversion layer disposed between the first electrode and the second electrode and containing a first material having an absorption peak at a first wavelength; and a second photoelectric conversion layer disposed between the first photoelectric conversion layer and the second electrode and containing a second material having an absorption peak at a second wavelength different from the first wavelength. The absolute value of the ionization potential of the first material is larger by at least 0.2 eV than the absolute value of the ionization potential of the second material.
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公开(公告)号：US10477121B2
公开(公告)日：2019-11-12
申请号：US15873190
申请日：2018-01-17
Inventor： Shinichi Machida , Masashi Murakami , Takeyoshi Tokuhara , Masaaki Yanagida , Sanshiro Shishido , Manabu Nakata , Masumi Izuchi
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the pixel electrode and the counter electrode; and a computing circuit that acquires a first signal upon a first voltage being applied between the pixel electrode and the counter electrode, the first signal corresponding to an image captured with visible light and infrared light and a second signal upon a second voltage being applied between the pixel electrode and the counter electrode, the second signal corresponding to an image captured with visible light, and generates a third signal by performing a computation using the first signal and the second signal, the third signal corresponding to an image captured with infrared light.
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公开(公告)号：US11723225B2
公开(公告)日：2023-08-08
申请号：US18066675
申请日：2022-12-15
Inventor： Takeyoshi Tokuhara , Sanshiro Shishido , Yasuo Miyake , Shinichi Machida
IPC: H10K39/32 , H01L27/146
CPC classification number: H10K39/32 , H01L27/146 , H01L27/14669
Abstract: An imaging device including a semiconductor substrate including a first surface that receives light from outside, and a second surface opposite to the first surface; a first transistor located on the second surface; and a photoelectric converter that faces the second surface and that receives light transmitted through the semiconductor substrate. The semiconductor substrate is a silicon substrate or a silicon compound substrate, and the photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that contains a material which absorbs light having a first wavelength longer than or equal to 1.1 μm, and the material has a quantum nanostructure.
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公开(公告)号：US11659299B2
公开(公告)日：2023-05-23
申请号：US17549035
申请日：2021-12-13
Inventor： Shinichi Machida , Takeyoshi Tokuhara , Manabu Nakata , Sanshiro Shishido , Masaaki Yanagida , Masumi Izuchi
CPC classification number: H04N25/75 , H04N25/76 , H10K30/211 , H10K39/32 , H10K85/211 , Y02E10/549
Abstract: An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.
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