公开(公告)号：US11073768B2

公开(公告)日：2021-07-27

申请号：US16598146

申请日：2019-10-10

Applicant: KLA Corporation

Inventor： Andrew V. Hill ,  Amnon Manassen ,  Gilad Laredo ,  Yoel Feler ,  Mark Ghinovker ,  Vladimir Levinski

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/95

Abstract: A metrology system may include a controller coupled to a scanning metrology tool that images a sample in motion along a scan direction. The controller may receive an image of a metrology target on the sample from the scanning metrology tool, where the metrology target comprises a first measurement group including cells distributed along a transverse direction orthogonal to the scan direction, and a second measurement group separated from the first measurement group along the scan direction including cells distributed along the transverse direction. The controller may further generate at least a first metrology measurement based on at least one of the cells in the first measurement group, and generate at least a second metrology measurement based on at least one of the cells in the second measurement group.

公开(公告)号：US20210200105A1

公开(公告)日：2021-07-01

申请号：US17200479

申请日：2021-03-12

Applicant: KLA Corporation

Inventor： Enna Leshinsky-Altshuller ,  Inna Tarshish-Shapir ,  Mark Ghinovker ,  Diana Shaphirov ,  Guy Ben Dov ,  Roie Volkovich ,  Chris Steely

IPC: G03F7/20

Abstract: A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.

公开(公告)号：US20200348604A1

公开(公告)日：2020-11-05

申请号：US16921880

申请日：2020-07-06

Applicant: KLA Corporation

Inventor： Michael E. Adel ,  Inna Tarshish-Shapir ,  Shiming Wei ,  Mark Ghinovker

IPC: G03F7/20 ,  H01L21/66 ,  G06F30/00

Abstract: Metrology target design methods and verification targets are provided. Methods comprise using OCD data related to designed metrology target(s) as an estimation of a discrepancy between a target model and a corresponding actual target on a wafer, and adjusting a metrology target design model to compensate for the estimated discrepancy. The dedicated verification targets may comprise overlay target features and be size optimized to be measureable by an OCD sensor, to enable compensation for inaccuracies resulting from production process variation. Methods also comprise modifications to workflows between manufacturers and metrology vendors which provide enable higher fidelity metrology target design models and ultimately higher accuracy of metrology measurements.

公开(公告)号：US12105433B2

公开(公告)日：2024-10-01

申请号：US17675912

申请日：2022-02-18

Applicant: KLA Corporation

Inventor： Yoel Feler ,  Mark Ghinovker ,  Diana Shaphirov ,  Evgeni Gurevich ,  Vladimir Levinski

IPC: G03F7/00

CPC classification number: G03F7/70633

Abstract: A metrology target may include a first rotationally symmetric working zone with one or more instances of a first pattern and a second rotationally-symmetric working zone with one or more instances of a second pattern, where at least one of the first pattern or the second pattern is a Moiré pattern formed from a first grating structure with a first pitch along a measurement direction on a first sample layer and a second grating structure with a second pitch different than the first pitch along the measurement direction on a second sample layer. Centers of rotational symmetry of the first and second working zones may overlap by design when an overlay error between the first sample layer and the second layer is zero. A difference between the centers of rotational symmetry of the first and second working zones may indicate an overlay error between the first and second sample layers.

公开(公告)号：US11532566B2

公开(公告)日：2022-12-20

申请号：US16964714

申请日：2020-06-25

Applicant: KLA CORPORATION

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Raviv Yohanan ,  Mark Ghinovker

IPC: H01L23/544 ,  G01B21/22 ,  G03F7/20

Abstract: A target and method for using the same in the measurement of misregistration between at least a first layer and a second layer formed on a wafer in the manufacture of functional semiconductor devices on the wafer, the functional semiconductor devices including functional device structures (FDSTs), the target including a plurality of measurement structures (MSTs), the plurality of MSTs being part of the first layer and the second layer and a plurality of device-like structures (DLSTs), the plurality of DLSTs being part of at least one of the first layer and the second layer, the DLSTs sharing at least one characteristic with the FDSTs and the MSTs not sharing the at least one characteristic with the FDSTs.

公开(公告)号：US20220357674A1

公开(公告)日：2022-11-10

申请号：US17684179

申请日：2022-03-01

Applicant: KLA Corporation

Inventor： Andrew V. Hill ,  Yoel Feler ,  Amnon Manassen ,  Mark Ghinovker ,  Yonatan Vaknin

IPC: G03F7/20 ,  G01B11/26

Abstract: An overlay metrology system may include an overlay metrology tool suitable for measurement of an overlay target on a sample, the overlay target including one or more grating structures with patterned features distributed along one or more measurement directions. The overlay metrology tool may include an objective lens and an illumination pathway to illuminate the overlay target with two or more oblique illumination lobes distributed among one or more illumination distributions such that, for each of the measurement directions, diffraction orders of the one or more illumination distributions by the overlay target that are collected by the objective lens exclusively include a 0-order diffraction lobe and a single first-order diffraction lobe from at least one of the two or more illumination lobes. The overlay metrology tool may further include at least one detector to image the sample and a controller to generate overlay measurements based on the images.

公开(公告)号：US11467503B2

公开(公告)日：2022-10-11

申请号：US17200479

申请日：2021-03-12

Applicant: KLA Corporation

Inventor： Enna Leshinsky-Altshuller ,  Inna Tarshish-Shapir ,  Mark Ghinovker ,  Diana Shaphirov ,  Guy Ben Dov ,  Roie Volkovich ,  Chris Steely

IPC: G03F7/20

Abstract: A metrology system may include a controller to receive a first metrology dataset associated with a first set of metrology target features on a sample including first features from a first exposure field on a first sample layer and second features from a second exposure field on a second sample layer, where the second exposure field partially overlaps the first exposure field. The controller may further receive a second metrology dataset associated with a second set of metrology target features including third features from a third exposure field on the second layer that overlaps the first exposure field and fourth features formed from a fourth exposure field on the first layer of the sample that overlaps the second exposure field. The controller may further determine fabrication errors based on the first and second metrology datasets and generate correctables to adjust a lithography tool based on the fabrication errors.

公开(公告)号：US20210311401A1

公开(公告)日：2021-10-07

申请号：US17354307

申请日：2021-06-22

Applicant: KLA Corporation

Inventor： Andrew V. Hill ,  Amnon Manassen ,  Gilad Laredo ,  Yoel Feler ,  Mark Ghinovker ,  Vladimir Levinski

IPC: G03F7/20 ,  G01N21/956 ,  G01N21/95

Abstract: A metrology system may include a controller coupled to a scanning metrology tool that images a sample in motion along a scan direction. The controller may receive an image of a metrology target on the sample from the scanning metrology tool, where the metrology target comprises a first measurement group including cells distributed along a transverse direction orthogonal to the scan direction, and a second measurement group separated from the first measurement group along the scan direction including cells distributed along the transverse direction. The controller may further generate at least a first metrology measurement based on at least one of the cells in the first measurement group, and generate at least a second metrology measurement based on at least one of the cells in the second measurement group.

公开(公告)号：US20210240089A1

公开(公告)日：2021-08-05

申请号：US16996254

申请日：2020-08-18

Applicant: KLA Corporation

Inventor： Anna Golotsvan ,  Inna Tarshish-Shapir ,  Mark Ghinovker ,  Rawi Dirawi

IPC: G03F7/20 ,  G01N23/2251 ,  G01N21/47

Abstract: A metrology target includes a first set of pattern elements compatible with a first metrology mode along one or more directions, and a second set of pattern elements compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements.

公开(公告)号：US12204254B2

公开(公告)日：2025-01-21

申请号：US16760797

申请日：2020-03-27

Applicant: KLA CORPORATION

Inventor： Yoel Feler ,  Mark Ghinovker

IPC: G03F7/00

Abstract: A multi-layered moir target, useful in the calculation of misregistration between at least first, second and third layers being formed on a semiconductor device wafer, including at least one group of periodic structure stacks, each including a first stack, including a first stack first periodic structure (S1P1) having an S1P1 pitch along a first axis, a second stack, including a second stack first periodic structure (S2P1) having an S2P1 pitch along a second axis and a third stack, including a third stack first periodic structure (S3P1) having an S3P1 pitch along a third axis, the first axis being parallel to an x-axis or a y-axis, and at least one of the stacks including a second periodic structure having a second periodic structure pitch along at least one fourth axis parallel to the first axis and co-axial with one of the axes.