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公开(公告)号：US09337331B2
公开(公告)日：2016-05-10
申请号：US14826884
申请日：2015-08-14
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L27/088 , H01L29/08
CPC分类号： H01L29/7816 , H01L27/088 , H01L29/0619 , H01L29/0653 , H01L29/0696 , H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/7835
摘要： A semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type provided on part of the first semiconductor layer in each of a first region and a second region separated from each other. A first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between the third semiconductor layer and the seventh semiconductor layer. The second distance in the first region is longer than the second distance in the second region.
摘要翻译： 半导体器件包括第一导电类型的第一半导体层和设置在彼此分离的第一区域和第二区域中的每一个中的第一半导体层的一部分上的第二导电类型的第二半导体层。 第一距离是在连接第四半导体层和第六半导体层的方向上的第一绝缘膜的两端之间的距离。 第一区域中的第一距离比第二区域中的第一距离长。 第二距离是第三半导体层和第七半导体层之间的距离。 第一区域中的第二距离比第二区域中的第二距离长。
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公开(公告)号：US09142613B2
公开(公告)日：2015-09-22
申请号：US14454555
申请日：2014-08-07
CPC分类号： H01L29/7816 , H01L27/088 , H01L29/0619 , H01L29/0653 , H01L29/0696 , H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/7835
摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, and a second semiconductor layer of a second conductivity type provided on part of the first semiconductor layer in each of a first region and a second region separated from each other. A first distance is a distance between both ends of the first insulating film in a direction connecting the fourth semiconductor layer and the sixth semiconductor layer. The first distance in the first region is longer than the first distance in the second region. A second distance is a distance between the third semiconductor layer and the seventh semiconductor layer. The second distance in the first region is longer than the second distance in the second region.
摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层和第二导电类型的第二半导体层，设置在第一半导体层的第一半导体层的一部分上，并且每个第一半导体层分别与第一半导体层 其他。 第一距离是在连接第四半导体层和第六半导体层的方向上的第一绝缘膜的两端之间的距离。 第一区域中的第一距离比第二区域中的第一距离长。 第二距离是第三半导体层和第七半导体层之间的距离。 第一区域中的第二距离比第二区域中的第二距离长。
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公开(公告)号：US09087533B2
公开(公告)日：2015-07-21
申请号：US14569356
申请日：2014-12-12
发明人： Mariko Shimizu , Katsuhiko Koui , Shuichi Murakami , Hiromi Yuasa
IPC分类号： G11B5/35
CPC分类号： G11B5/35 , G11B5/1278 , G11B5/314 , G11B2005/001
摘要： According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.
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24.发明申请公开(公告)号：US20150162031A1
公开(公告)日：2015-06-11
申请号：US14569103
申请日：2014-12-12
发明人： Mariko Shimizu , Katsuhiko Koui , Shuichi Murakami , Hiromi Yuasa
IPC分类号： G11B5/35
CPC分类号： G11B5/35 , G11B5/1278 , G11B5/314 , G11B2005/001
摘要： According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.
摘要翻译： 根据一个实施例，磁头包括形成在主磁极和辅助磁极之间的自旋扭矩振荡器。 自旋转矩振荡器包括透射型自旋转移层，第一中间层，振荡层，第二中间层和反射型自旋转移层。 透射型自旋转移层包括第一垂直磁化膜和第一界面磁性层。 第一界面磁性层含有选自Fe，Co和Ni中的至少一种元素，以及选自Cr，V，Mn，Ti和Sc中的至少一种元素。 反射型自旋转移层包括第二垂直磁化膜。
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公开(公告)号：US08879206B2
公开(公告)日：2014-11-04
申请号：US13717327
申请日：2012-12-17
CPC分类号： G11B5/3133 , G11B5/314 , G11B5/3146 , G11B5/4833 , G11B2005/0024
摘要： According to one embodiment, a magnetic recording head includes a main magnetic pole, an auxiliary magnetic pole, and a spin torque oscillator formed between them. The spin torque oscillator includes a main oscillation layer and spin sink layer as an oscillation layer. The spin sink layer contains one of iron and cobalt, and at least one element selected from the group consisting of platinum, palladium, ruthenium, tantalum, chromium, terbium, gadolinium, europium, dysprosium, and samarium.
摘要翻译： 根据一个实施例，磁记录头包括主磁极，辅助磁极和在它们之间形成的自旋转矩振荡器。 自旋扭矩振荡器包括主振荡层和作为振荡层的自旋沉积层。 旋转沉积层含有铁和钴中的一种，以及选自铂，钯，钌，钽，铬，铽，钆，铕，镝和钐中的至少一种元素。
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公开(公告)号：US20130270637A1
公开(公告)日：2013-10-17
申请号：US13850124
申请日：2013-03-25
发明人： Kanako KOMATSU , Jun Morioka , Koji Shirai , Keita Takahashi , Tsubasa Yamada , Mariko Shimizu
IPC分类号： H01L29/78
CPC分类号： H01L29/7823 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/0847 , H01L29/0886 , H01L29/1045 , H01L29/7816 , H01L29/7835
摘要： A first semiconductor layer extends from the element region to the element-termination region, and functions as a drain of the MOS transistor. A second semiconductor layer extends, below the first semiconductor layer, from the element region to the element-termination region. A third semiconductor layer extends from the element region to the element-termination region, and is in contact with the second semiconductor layer to function as a drift layer of the MOS transistor. A distance between a boundary between the first semiconductor layer and the field oxide film, and the end portion of the third semiconductor layer on the fifth semiconductor layer side in the element region is smaller than that between a boundary between the first semiconductor layer and the field oxide layer and an end portion of the third semiconductor layer on the fifth semiconductor layer side in the element-termination region.
摘要翻译： 第一半导体层从元件区域延伸到元件终止区域，并且用作MOS晶体管的漏极。 第二半导体层在第一半导体层下方从元件区域延伸到元件终止区域。 第三半导体层从元件区域延伸到元件终止区域，并且与第二半导体层接触，用作MOS晶体管的漂移层。 第一半导体层和场氧化膜之间的边界与元件区域中的第五半导体层侧的第三半导体层的端部之间的距离小于第一半导体层与场的边界之间的距离 氧化物层和元件终止区域中的第五半导体层侧的第三半导体层的端部。
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公开(公告)号：US20220059710A1
公开(公告)日：2022-02-24
申请号：US17184297
申请日：2021-02-24
发明人： Honam KWON , Kazuhiro Suzuki , Keita Sasaki , Mariko Shimizu
IPC分类号： H01L31/0232 , H01L27/144 , H01L31/107 , G01S17/08 , G01S17/89
摘要： According to one embodiment, a light detector includes a first semiconductor layer of a first conductivity type, a first region, a quenching part, a second region, and a first layer. The first region is located on a portion of the first semiconductor layer, includes a first-conductivity-type first semiconductor region that has a higher first-conductivity-type impurity concentration than the first semiconductor layer, and includes a second semiconductor region of a second conductivity type provided on the first semiconductor region. The quenching part is electrically connected to the second semiconductor region. The second region is located on another portion of the first semiconductor layer, includes a second-conductivity-type third semiconductor region, and includes a first-conductivity-type fourth semiconductor region provided on a portion of the third semiconductor region. The first layer is located on the second region and includes a resin that absorbs or reflects light.
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公开(公告)号：US10811067B2
公开(公告)日：2020-10-20
申请号：US16119003
申请日：2018-08-31
发明人： Altansargai Buyandalai , Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Hiroaki Yoda , Katsuhiko Koui
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.
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公开(公告)号：US10797229B2
公开(公告)日：2020-10-06
申请号：US16423805
申请日：2019-05-28
发明人： Altansargai Buyandalai , Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Hiroaki Yoda , Tomoaki Inokuchi
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US10192572B2
公开(公告)日：2019-01-29
申请号：US15841364
申请日：2017-12-14
发明人： Kenichiro Yamada , Shuichi Murakami , Naoyuki Narita , Katsuhiko Koui , Akihiko Takeo , Mariko Shimizu , Hitoshi Iwasaki
摘要： According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.
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