Abstract:
A wafer level chip scale package capable of reducing parasitic capacitances between a rerouting and the metal wiring of a wafer, and a method for manufacturing the same are provided. An embodiment of the wafer level chip scale package includes a wafer arranged with a plurality of bonding pads and an insulating member formed on the wafer so that the bonding pads are exposed. A rerouting is further formed on the insulating member in contact with the exposed bonding pads and an external connecting terminal is electrically connected to a portion of the rerouting. Here, the insulating member overlapping the rerouting is provided with a plurality of spaces in which air is trapped.
Abstract:
A display panel includes a plurality of pixels including at least four even-numbered subpixels. The at least four even-numbered subpixels includes: a first red subpixel including a pixel electrode electrically connected to a switching element which is connected to a first data line and a first gate line; a first green subpixel including a pixel electrode electrically connected to a switching element which is connected to a second data line and a second gate line, where the second data line is disposed adjacent to the first data line; a first blue subpixel including a pixel electrode electrically connected to a switching element which is connected to the first data line and the second gate line; and a first multi-primary subpixel including a pixel electrode electrically connected to a switching element which is connected to the second data line and the first gate line.
Abstract:
Multi-chip package includes first through Nth semiconductor chips, each of which includes an input/output pad, an input/output driver coupled to the input/output pad, and an internal circuit. Each of the first through Nth semiconductor chips includes an internal pad for coupling the internal input/output driver and the internal circuit. The internal pads of the first through Nth semiconductor chips are coupled to each other such as via a common pad installed at a substrate. The input/output pad of the first semiconductor chip directly receives an input/output signal transmitted via a corresponding pin of the multi-chip package. The second through Nth semiconductor chips indirectly receive the input/output signal via the internal pads coupled to each other. The multi-chip package can improve signal compatibility by maintaining a parasitic load of a pin to at least the level of a single chip, when a signal is transmitted to the pin at high speed. Also, when a signal that is not necessarily transmitted at high speed is applied to a pin, semiconductor chips can be packaged according to the preexisting methods.
Abstract:
A biochip package allowing biochips optimized for high-volume production to be compatible with general-purpose devices and a biochip packaging substrate of the biochip package are provided. The biochip package can include a biochip having a probe array mounted thereon and a biochip packaging substrate on which the biochip is mounted and which has a through cavity exposing a rear surface of the biochip.
Abstract:
Provided is a biochip kit and a method capable of detecting the binding of target molecules in a biological sample to at least one probe on a biochip. The biochip kit includes a housing, a biochip, disposed in the housing, including at least one probe, and a lid, connectedly installed on the housing, such that the lid can open or close the housing.
Abstract:
Provided are methods of fabricating semiconductor chips, semiconductor chips formed by the methods, and chip-stack packages having the semiconductor chips. One embodiment specifies a method that includes patterning a scribe line region of a semiconductor substrate to form a semiconductor strut spaced apart from edges of a chip region of the semiconductor substrate.
Abstract:
A semiconductor wafer with semiconductor chips having chip pads and a passivation layer is provided. First and second dielectric layers are sequentially formed on the passivation layer. The first and second dielectric layers form a ball pad area that includes an embossed portion, i.e., having a non-planar surface. A metal wiring layer is formed on the resulting structure including the embossed portion. A third dielectric layer is formed on the metal wiring layer. A portion of the third dielectric layer located on the embossed portion is removed to form a ball pad. A solder ball is formed on the embossed ball pad. With the embossed ball pad, the contact area between the solder balls and the metal wiring layer is increased, thereby improving the connection reliability.