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公开(公告)号:US20230074970A1
公开(公告)日:2023-03-09
申请号:US18053869
申请日:2022-11-09
Applicant: Intel Corporation
Inventor: Adel A. Elsherbini , Veronica Aleman Strong , Shawna M. Liff , Brandon M. Rawlings , Jagat Shakya , Johanna M. Swan , David M. Craig , Jeremy Alan Streifer , Brennen Karl Mueller
Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the first microelectronic component is coupled to the second microelectronic component by interconnects, and wherein the interconnects include individual first metal contacts coupled to respective individual second metal contacts; and a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the first direct bonding region.
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公开(公告)号:US20220149036A1
公开(公告)日:2022-05-12
申请号:US17580787
申请日:2022-01-21
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Adel A. Elsherbini , Feras Eid , Veronica Aleman Strong , Johanna M. Swan
IPC: H01L27/02 , H01L23/528 , H01L29/24 , H01L29/861 , H01L29/47 , H01L29/872 , H01L29/45
Abstract: Embodiments may relate to a die with a front-end and a backend. The front-end may include a transistor. The backend may include a signal line, a conductive line, and a diode that is communicatively coupled with the signal line and the conductive line. Other embodiments may be described or claimed.
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公开(公告)号:US20220093531A1
公开(公告)日:2022-03-24
申请号:US17544651
申请日:2021-12-07
Applicant: Intel Corporation
Inventor: Feras Eid , Veronica Aleman Strong , Aleksandar Aleksov , Adel A. Elsherbini , Johanna M. Swan
IPC: H01L23/60 , H01L23/498 , H01L21/48 , H01H61/01 , H01H49/00
Abstract: A switch in a package substrate of a microelectronic package is provided, the switch comprising: an actuator plate; a strike plate; and a connecting element mechanically coupling the actuator plate and the strike plate. The switch is configured to move within a cavity inside the package substrate between an open position and a closed position, a conductive material is coupled to the switch and to a ground via in the package substrate, and the conductive material is configured to move with the switch, such that the switch is conductively coupled to the ground via in the open position and the closed position.
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24.
公开(公告)号:US11239155B2
公开(公告)日:2022-02-01
申请号:US16724346
申请日:2019-12-22
Applicant: Intel Corporation
Inventor: Adel A. Elsherbini , Feras Eid , Johanna M. Swan , Aleksandar Aleksov , Veronica Aleman Strong
IPC: H01L23/522 , H01L23/498 , H01L23/528 , H01L23/552 , H01L23/00 , H01L27/02
Abstract: Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). In some embodiments, an IC component may include a conductive contact structure that includes a first contact element and a second contact element. The first contact element may be exposed at a face of the IC component, the first contact element may be between the face of the IC component and the second contact element, the second contact element may be spaced apart from the first contact element by a gap, and the second contact element may be in electrical contact with an electrical pathway in the IC component.
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公开(公告)号:US20210193645A1
公开(公告)日:2021-06-24
申请号:US16724259
申请日:2019-12-21
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Adel A. Elsherbini , Feras Eid , Veronica Aleman Strong , Johanna M. Swan
IPC: H01L27/02 , H01L23/528 , H01L29/24 , H01L29/45 , H01L29/47 , H01L29/872 , H01L29/861
Abstract: Embodiments may relate to a die with a front-end and a backend. The front-end may include a transistor. The backend may include a signal line, a conductive line, and a diode that is communicatively coupled with the signal line and the conductive line. Other embodiments may be described or claimed.
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公开(公告)号:US20210193644A1
公开(公告)日:2021-06-24
申请号:US16724257
申请日:2019-12-21
Applicant: Intel Corporation
Inventor: Aleksandar Aleksov , Adel A. Elsherbini , Feras Eid , Veronica Aleman Strong , Johanna M. Swan
IPC: H01L27/02 , H01L29/872
Abstract: Embodiments may relate to a package substrate that is to couple with the die. The package substrate may include a signal line that is communicatively coupled with the die. The package substrate may further include a conductive line. The package substrate may further include a diode communicatively coupled with the signal line and the conductive line. Other embodiments may be described or claimed.
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公开(公告)号:US20210193596A1
公开(公告)日:2021-06-24
申请号:US16721442
申请日:2019-12-19
Applicant: INTEL CORPORATION
Inventor: Adel A. Elsherbini , Feras Eid , Johanna M. Swan , Aleksandar Aleksov , Veronica Aleman Strong
IPC: H01L23/60 , H01L23/48 , H01L27/02 , H01L23/00 , H01L23/498
Abstract: Disclosed herein are structures, devices, and methods for electrostatic discharge protection (ESDP) in integrated circuits (ICs). For example, in some embodiments, an IC package support may include: a first conductive structure in a dielectric material; a second conductive structure in the dielectric material; and a material in contact with the first conductive structure and the second conductive structure, wherein the material includes a polymer, and the material is different from the dielectric material. The material may act as a dielectric material below a trigger voltage, and as a conductive material above the trigger voltage.
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公开(公告)号:US20250054672A1
公开(公告)日:2025-02-13
申请号:US18366756
申请日:2023-08-08
Applicant: Intel Corporation
Inventor: Veronica Aleman Strong , Neelam Prabhu Gaunkar
Abstract: Described herein are inductor devices formed using wafer processing techniques. The inductor devices are singulated and can be mounted into different packages or computing systems. The magnetic material included in the inductor devices have higher aspect ratios (e.g., relatively tall and thin magnetic regions), which may be achieved using electroplating. The electroplated magnetic material is highly concentrated, which enables a higher inductance density.
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公开(公告)号:US11751367B2
公开(公告)日:2023-09-05
申请号:US17468510
申请日:2021-09-07
Applicant: Intel Corporation
Inventor: Veronica Aleman Strong , Johanna M. Swan , Aleksandar Aleksov , Adel A. Elsherbini , Feras Eid
CPC classification number: H05K9/0079 , C08G61/126 , C08G73/0611 , C08G85/004 , H01L21/4867 , H01L23/60 , C08G2261/1424 , C08G2261/3223 , C08G2261/514 , C08G2261/78 , H01L23/498
Abstract: Embodiments may relate to a microelectronic package comprising: a die and a package substrate coupled to the die with a first interconnect on a first face. The package substrate comprises: a second interconnect and a third interconnect on a second face opposite to the first face; a conductive signal path between the first interconnect and the second interconnect; a conductive ground path between the second interconnect and the third interconnect; and an electrostatic discharge (ESD) protection material coupled to the conductive ground path. The ESD protection material comprises a first electrically-conductive carbon allotrope having a first functional group, a second electrically-conductive carbon allotrope having a second functional group, and an electrically-conductive polymer chemically bonded to the first functional group and the second functional group permitting an electrical signal to pass between the first and second electrically-conductive carbon allotropes.
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公开(公告)号:US11527501B1
公开(公告)日:2022-12-13
申请号:US17122934
申请日:2020-12-15
Applicant: Intel Corporation
Inventor: Adel A. Elsherbini , Veronica Aleman Strong , Shawna M. Liff , Brandon M. Rawlings , Jagat Shakya , Johanna M. Swan , David M. Craig , Jeremy Alan Streifer , Brennen Karl Mueller
Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region and coupled to the first microelectronic component by the first and second direct bonding regions, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, and wherein individual first metal contacts in the first direct bonding region are coupled to respective individual second metal contacts in the second direct bonding region; and a void between an individual first metal contact and a respective individual second metal contact.
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