SACRIFICIAL REDISTRIBUTION LAYER IN MICROELECTRONIC ASSEMBLIES HAVING DIRECT BONDING

    公开(公告)号:US20230074970A1

    公开(公告)日:2023-03-09

    申请号:US18053869

    申请日:2022-11-09

    Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first microelectronic component having a first direct bonding region, wherein the first direct bonding region includes first metal contacts and a first dielectric material between adjacent ones of the first metal contacts; a second microelectronic component having a second direct bonding region, wherein the second direct bonding region includes second metal contacts and a second dielectric material between adjacent ones of the second metal contacts, wherein the first microelectronic component is coupled to the second microelectronic component by interconnects, and wherein the interconnects include individual first metal contacts coupled to respective individual second metal contacts; and a void between an individual first metal contact that is not coupled to a respective individual second metal contact, wherein the void is in the first direct bonding region.

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