-
公开(公告)号:US20210043415A1
公开(公告)日:2021-02-11
申请号:US16920898
申请日:2020-07-06
Applicant: Hitachi High-Tech Corporation
Inventor: Yohei Nakamura , Takafumi Miwa , Heita Kimizuka , Natsuki Tsuno , Muneyuki Fukuda
IPC: H01J37/244 , H01J37/28 , G01N23/2251
Abstract: Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.
-
公开(公告)号:US20210043413A1
公开(公告)日:2021-02-11
申请号:US16928931
申请日:2020-07-14
Applicant: Hitachi High-Tech Corporation
Inventor: Takafumi Miwa , Yohei Nakamura , Natsuki Tsuno , Heita Kimizuka , Muneyuki Fukuda
IPC: H01J37/24 , H01J37/244
Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.
-
23.
公开(公告)号:US11776103B2
公开(公告)日:2023-10-03
申请号:US16885727
申请日:2020-05-28
Applicant: Hitachi High-Tech Corporation
Inventor: Heita Kimizuka , Natsuki Tsuno
CPC classification number: G06T7/0004 , H01J37/222 , H01J37/28 , G06T2207/10061 , G06T2207/20081 , G06T2207/30148 , H01J2237/24578
Abstract: A system in which electrical characteristics of an element formed on a sample can be evaluated. The system includes an image acquisition tool and a computer system that includes one or more processors and is configured to be communicable with the image acquisition tool. Electrical characteristic are derived by the image acquisition tool by receiving information regarding two or more characteristics of a specific pattern that is included in a plurality of images acquired from the image acquisition tool under at least two different image acquisition conditions and by referring to, for the information, relation information between information regarding two or more characteristics and electrical characteristics of an element formed on a sample, the characteristics being extracted from at least two pieces of image data acquired from the image acquisition tool under at least two image acquisition conditions.
-
公开(公告)号:US11749494B2
公开(公告)日:2023-09-05
申请号:US17545936
申请日:2021-12-08
Applicant: Hitachi High-Tech Corporation
Inventor: Takafumi Miwa , Yohei Nakamura , Natsuki Tsuno , Heita Kimizuka , Muneyuki Fukuda
IPC: H01J37/22 , H01J37/244 , G01N23/2251
CPC classification number: H01J37/22 , G01N23/2251 , H01J37/244 , G01N2223/07 , G01N2223/507 , G01N2223/646 , H01J2237/2448 , H01J2237/2482
Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.
-
公开(公告)号:US11646172B2
公开(公告)日:2023-05-09
申请号:US17545944
申请日:2021-12-08
Applicant: Hitachi High-Tech Corporation
Inventor: Takafumi Miwa , Yohei Nakamura , Natsuki Tsuno , Heita Kimizuka , Muneyuki Fukuda
IPC: H01J37/24 , H01J37/244 , H01J37/28
CPC classification number: H01J37/24 , H01J37/244 , H01J37/28 , H01J2237/221 , H01J2237/24475 , H01J2237/2817
Abstract: A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.
-
公开(公告)号:US11631568B2
公开(公告)日:2023-04-18
申请号:US17554216
申请日:2021-12-17
Applicant: Hitachi High-Tech Corporation
Inventor: Yasuhiro Shirasaki , Natsuki Tsuno , Minami Shouji , Yohei Nakamura , Muneyuki Fukuda
IPC: H01J37/22 , H01J37/244 , H01J37/28
Abstract: A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.
-
公开(公告)号:US20220108866A1
公开(公告)日:2022-04-07
申请号:US17554216
申请日:2021-12-17
Applicant: Hitachi High-Tech Corporation
Inventor: Yasuhiro Shirasaki , Natsuki Tsuno , Minami Shouji , Yohei Nakamura , Muneyuki Fukuda
IPC: H01J37/22 , H01J37/244
Abstract: A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.
-
公开(公告)号:US11232929B2
公开(公告)日:2022-01-25
申请号:US17040141
申请日:2018-04-25
Applicant: Hitachi High-Tech Corporation
Inventor: Heita Kimizuka , Natsuki Tsuno , Muneyuki Fukuda , Katsura Takaguchi
IPC: H01J37/22 , H01J37/147 , H01J37/244 , H01J37/28
Abstract: The purpose of the present disclosure is to propose a charged particle beam device capable of allowing specifying of a distance between irradiation points for a pulsed beam and a time between irradiation points. Proposed is a charged particle beam device equipped with a beam column which has a scanning deflector for sweeping a beam and directs the beam swept by the scanning deflector onto a sample in pulses, wherein: the distance between irradiation points of the pulsed beam is set such that feature quantities of one or more specific regions of an image obtained on the basis of an output of a detector satisfy a predetermined state; the duration of time between irradiation points for the pulsed beam is changed when in a state in which the set distance between irradiation points is set or in a state in which multiple distances between irradiation points determined on the basis of the specified distance between irradiation points are set; and the beam emission is carried out according to the duration of time between irradiation points whereby the feature quantities of the multiple specific regions of the image obtained on the basis of the output of the detector satisfy the predetermined state.
-
公开(公告)号:US20210066028A1
公开(公告)日:2021-03-04
申请号:US16927925
申请日:2020-07-13
Applicant: Hitachi High-Tech Corporation
Inventor: Yasuhiro Shirasaki , Natsuki Tsuno , Minami Shouji , Yohei Nakamura , Muneyuki Fukuda
IPC: H01J37/22 , H01J37/244
Abstract: A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.
-
公开(公告)号:US20210043412A1
公开(公告)日:2021-02-11
申请号:US16927932
申请日:2020-07-13
Applicant: Hitachi High-Tech Corporation
Inventor: Takafumi Miwa , Yohei Nakamura , Natsuki Tsuno , Heita Kimizuka , Muneyuki Fukuda
IPC: H01J37/22 , H01J37/244 , G01N23/2251
Abstract: A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.
-
-
-
-
-
-
-
-
-