公开(公告)号：US20190384158A1

公开(公告)日：2019-12-19

申请号：US16490018

申请日：2018-02-20

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI ,  Takahiro ONOUE ,  Hirofumi KOZAKAI

IPC: G03F1/24 ,  G03F1/26 ,  C23C14/14

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k

公开(公告)号：US20190384157A1

公开(公告)日：2019-12-19

申请号：US16490010

申请日：2018-03-01

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Junichi HORIKAWA ,  Takahiro ONOUE ,  Mizuki KATAOKA

IPC: G03F1/24 ,  G03F1/52 ,  G03F1/54

Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).

公开(公告)号：US20180120692A1

公开(公告)日：2018-05-03

申请号：US15829090

申请日：2017-12-01

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Takahiro ONOUE ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F7/20 ,  G03F1/48 ,  G03F1/38 ,  G03F1/26 ,  C23C14/18 ,  C23C14/06

CPC classification number: G03F1/24 ,  C23C14/0641 ,  C23C14/185 ,  G03F1/26 ,  G03F1/38 ,  G03F1/48 ,  G03F7/2004

Abstract: A reflective mask blank that comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12. The protective film 14 is made of a material containing ruthenium as a main component, and an anti-diffusion layer 15 which is an oxidized layer containing ruthenium as a main component is formed on a surface of the protective film 14, or as a part of the protective film 14 on a side adjacent to the phase-shift layer 16, so as to inhibit counter diffusion in relation to the phase- shift film 16, thereby inhibiting the thermal diffusion between the protective film 14 and the material of the phase-shift film pattern. Also, a reflective mask and method of manufacture.

公开(公告)号：US20240319577A1

公开(公告)日：2024-09-26

申请号：US18592926

申请日：2024-03-01

Applicant: HOYA CORPORATION

Inventor： Hitoshi MAEDA ,  Yohei IKEBE

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask blank comprises a substrate, a multilayer reflective film formed on the substrate, and a thin film formed on the multilayer reflective film. The thin film includes a first layer and a second layer. The first layer has a reflectance greater than 2.5% with respect to EUV light. The second layer has a reflectance greater than the reflectance of the first layer with respect to the EUV light.

公开(公告)号：US20240103354A1

公开(公告)日：2024-03-28

申请号：US18526463

申请日：2023-12-01

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI ,  Takahiro ONOUE ,  Hirofumi KOZAKAI

IPC: G03F1/24 ,  G03F1/26

CPC classification number: G03F1/24 ,  G03F1/26

Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.

公开(公告)号：US20240069428A1

公开(公告)日：2024-02-29

申请号：US18039466

申请日：2021-12-08

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE

IPC: G03F1/24 ,  C03C17/22 ,  C03C17/36 ,  C23C14/06 ,  C23C14/08 ,  C23C14/18 ,  C23C14/35 ,  C23C14/46 ,  G03F1/74 ,  G03F1/84

CPC classification number: G03F1/24 ,  C03C17/225 ,  C03C17/3636 ,  C03C17/3649 ,  C03C17/3665 ,  C23C14/0641 ,  C23C14/083 ,  C23C14/185 ,  C23C14/35 ,  C23C14/46 ,  G03F1/74 ,  G03F1/84 ,  C03C2218/155 ,  C03C2218/156 ,  C03C2218/365

Abstract: A reflective mask blank includes a multilayer reflective film, a first thin film, and a second thin film in this order on a main surface of a substrate, a relative reflectance R2 of the second thin film with respect to a reflectance of the multilayer reflective film in the light of 13.5 nm wavelength is 3% or more, and an extinction coefficient k1 of the first thin film in the light of 13.5 nm wavelength and a thickness d1 [nm] of the first thin film satisfy a relationship of (Formula 1).


21.5×k12×d12−52.5×k1×d1+32.1>R2  (Formula 1)

公开(公告)号：US20240036458A1

公开(公告)日：2024-02-01

申请号：US18483484

申请日：2023-10-09

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI

IPC: G03F1/32 ,  G03F1/24

CPC classification number: G03F1/32 ,  G03F1/24

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

公开(公告)号：US20230244135A1

公开(公告)日：2023-08-03

申请号：US17946709

申请日：2022-09-16

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI ,  Takahiro ONOUE ,  Hirofumi KOZAKAI

IPC: G03F1/24 ,  G03F1/26

CPC classification number: G03F1/24 ,  G03F1/26

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k > α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k

公开(公告)号：US20230087016A1

公开(公告)日：2023-03-23

申请号：US17990163

申请日：2022-11-18

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE ,  Tsutomu SHOKI

IPC: G03F1/32 ,  G03F1/24

Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

公开(公告)号：US20220107557A1

公开(公告)日：2022-04-07

申请号：US17311662

申请日：2019-12-23

Applicant: HOYA CORPORATION

Inventor： Yohei IKEBE

IPC: G03F1/24 ,  G03F1/54 ,  H01L21/033

Abstract: A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.