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    Workpiece cutting method
    21.
    发明授权
    Workpiece cutting method 有权

    公开(公告)号：US11413708B2

    公开(公告)日：2022-08-16

    申请号：US16605300

    申请日：2018-04-12

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takeshi Sakamoto ,  Tomoya Taguchi

    IPC: B23K26/364 ,  B23K26/53 ,  B23K26/38 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/78 ,  B23K101/40

    Abstract: An object cutting method includes: a first step of preparing an object to be processed including a single crystal silicon substrate and a functional device layer provided on a first main surface side and forming an etching protection layer on a second main surface of the object; a second step of irradiating the object with laser light to form at least one row of modified regions in the single crystal silicon substrate and to form a fracture in the object so as to extend between the at least one row of modified regions and a surface of the etching protection layer; and a third step of performing dry etching on the object from the second main surface side, in a state in which the etching protection layer is formed on the second main surface, to form a groove opening to the second main surface.

    Laminated element manufacturing method
    22.
    发明授权
    Laminated element manufacturing method 有权

    公开(公告)号：US11069672B2

    公开(公告)日：2021-07-20

    申请号：US16633367

    申请日：2018-07-13

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takeshi Sakamoto ,  Ryuji Sugiura ,  Yuta Kondoh ,  Naoki Uchiyama

    IPC: H01L21/304 ,  H01L25/00 ,  H01L21/268 ,  H01L21/78 ,  H01L25/18

    Abstract: A laminated element manufacturing method includes a first forming step of forming a first gettering region for each of functional elements by irradiating a semiconductor substrate of a first wafer with a laser light, a first grindsing step of grinding the semiconductor substrate of the first wafer and removing a portion of the first gettering region, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second gettering region for each of the functional elements by irradiating the semiconductor substrate of the second wafer with a laser light, and a second grinding step of grinding the semiconductor substrate of the second wafer and removing a portion of the second gettering region.

    Laser processing device and laser processing method
    24.
    发明授权
    Laser processing device and laser processing method 有权

    公开(公告)号：US11007607B2

    公开(公告)日：2021-05-18

    申请号：US15301451

    申请日：2015-03-30

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takeshi Sakamoto ,  Takafumi Ogiwara

    IPC: B23K26/53 ,  B23K26/064 ,  B23K26/03 ,  B23K26/082 ,  C03B33/02 ,  B23K26/0622 ,  B23K26/073 ,  B23K101/40 ,  B23K103/00 ,  C03B33/07

    Abstract: A laser processing device includes a laser light source, a converging optical system, a controller, and a reflective spatial light modulator. The controller and the reflective spatial light modulator, while using an aberration as a reference aberration, the aberration occurring when laser light is converged at a converging position with an amount of aberration correction in a state in which an ideal converging position is shifted by a predetermined distance to a laser light entrance side from the converging position, adjusts the aberration such that a first converging length longer than a reference converging length of the reference aberration is obtained and a first converging intensity less than a reference converging intensity of the reference aberration is obtained, when a modified region is formed within a first region closest to a front face of an object to be processed.

    Inspection device and processing system
    26.
    发明授权
    Inspection device and processing system 有权

    公开(公告)号：US12272577B2

    公开(公告)日：2025-04-08

    申请号：US17908288

    申请日：2021-03-03

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Takeshi Sakamoto ,  Takafumi Ogiwara ,  Iku Sano

    IPC: H01L21/67 ,  B23K26/03 ,  B23K26/53 ,  B23K103/00 ,  G01N21/95

    Abstract: An inspection device includes a laser irradiation unit irradiating a wafer with laser light, a display displaying information, and a control unit. The control unit is constituted to execute deriving of an estimated processing result including information a modified region and a crack extending from the modified region formed on the wafer when the wafer is irradiated with the laser light by the laser irradiation unit on the basis of set recipes (processing conditions), and controlling the display so as to display an estimated processing result image depicting both a graphic image of the wafer and a graphic image of the modified region and the crack in the wafer in consideration of positions of the modified region and the crack in the wafer derived as the estimated processing result.

    Cutting method
    29.
    发明授权
    Cutting method 有权

    公开(公告)号：US11380586B2

    公开(公告)日：2022-07-05

    申请号：US16632291

    申请日：2018-07-18

    Applicant: IWATANI CORPORATION ,  HAMAMATSU PHOTONICS K.K.

    Inventor： Toshiki Manabe ,  Takehiko Senoo ,  Koichi Izumi ,  Tadashi Shojo ,  Takafumi Ogiwara ,  Takeshi Sakamoto

    IPC: H01L21/78 ,  H01L21/268 ,  H01L21/3065

    Abstract: A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, forming a groove in the workpiece along an intended cut line. In the forming a groove, a first dry etching process is performed from a front surface toward a rear surface of the workpiece. After the first dry etching process, a first pressure-reducing process is performed in which the workpiece is placed under an atmosphere of reduced pressure as compared to pressure during the first dry etching process. After the first pressure-reducing process, a second dry etching process is performed from the front surface toward the rear surface of the workpiece.

    Forming openings at intersection of cutting lines
    30.
    发明授权
    Forming openings at intersection of cutting lines 有权

    公开(公告)号：US11367655B2

    公开(公告)日：2022-06-21

    申请号：US16605878

    申请日：2018-02-09

    Applicant: HAMAMATSU PHOTONICS K.K.

    Inventor： Tomoya Taguchi ,  Takeshi Sakamoto

    IPC: H01L21/78 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/308 ,  H01L23/00 ,  B23K26/53 ,  H01L21/304

    Abstract: A chip production method includes a first step of setting a first cutting line and a second cutting line on a substrate including a plurality of functional elements, a second step of forming a mask on the substrate such that the functional elements are covered and an intersection region including an intersection of the first cutting line and the second cutting line is exposed, a third step of removing the intersection region from the substrate and forming a penetration hole by etching the substrate using the mask, a fourth step of forming a modified region in the substrate along the first cutting line, a fifth step of forming a modified region in the substrate along the second cutting line, and a sixth step of forming chips by cutting the substrate along the first cutting line and the second cutting line.

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