Laser machining device
    1.
    发明授权

    公开(公告)号:US11833611B2

    公开(公告)日:2023-12-05

    申请号:US17289011

    申请日:2019-10-30

    Abstract: A laser processing apparatus includes a support portion, a laser processing head, a vertical movement mechanism, a horizontal movement mechanism, and a controller. The controller controls starting and stopping of emission of a laser light from the laser processing head based on rotation information in a state where a focusing point is positioned at a position along a circumferential edge of an effective region in a target, while rotating the support portion, to perform a circumferential edge process for forming a modified region along the circumferential edge of the effective region in the target.

    Laser machining device and laser machining method

    公开(公告)号:US10525553B2

    公开(公告)日:2020-01-07

    申请号:US15314182

    申请日:2015-03-30

    Abstract: A laser processing device includes: a laser light source emitting laser light; a converging optical system converging the laser light at an object to be processed; a reflective spatial light modulator modulating the laser light such that the laser light is caused to branch into 0th order light and ±nth order light (n is a natural number) including at least first processing light and second processing light, and the first processing light is converged at a first converging point and the second processing light is converged at a second converging point; and a light blocking part blocking light to be converged at an outside with respect to the first processing light and the second processing light of the 0th order light and the ±nth order light to be converged at the object.

    Laser Processing Method and Semiconductor Device
    6.
    发明申请
    Laser Processing Method and Semiconductor Device 审中-公开
    激光加工方法和半导体器件

    公开(公告)号:US20140015113A1

    公开(公告)日:2014-01-16

    申请号:US14029574

    申请日:2013-09-17

    Abstract: A laser processing method which can reliably form a modified region within an object to be processed along a desirable part in a line to cut is provided.This laser processing method irradiates a substrate 4 with laser light L while locating a light-converging point P within the substrate 4, so as to form a quality modified region 71 to become a starting point region for cutting within the substrate 4 along a line to cut 5. Here, the laser light L is oscillated pulsewise along a desirable part RP in the line to cut 5, and continuously in a predetermined part RC in the line to cut 5. Consequently, the quality modified region 71 is formed within the substrate 4 along the desirable part RP in the line to cut 5, whereas no quality modified region 71 is formed within the substrate 4 along the predetermined part RC in the line to cut 5.

    Abstract translation: 提供一种激光加工方法,其能够沿着切割线中的期望部分可靠地形成待处理物体内的改质区域。 该激光加工方法在将聚光点P定位在基板4内的状态下照射激光L的基板4,从而形成质量改质区域71,成为基板4内的切割起点区域, 这里,激光L沿着要切割的线5中的期望部分RP脉动地沿着切割线5中的预定部分RC连续振荡。因此,质量改质区域71形成在基板内 沿着要切割的线5中的期望部分RP 4,而沿着切割线5中的预定部分RC,在基板4内不形成质量改质区域71。

    Laser machining head and laser machining device

    公开(公告)号:US12145214B2

    公开(公告)日:2024-11-19

    申请号:US17288821

    申请日:2019-10-30

    Abstract: A laser processing head includes: a housing; an entrance portion; an adjustment portion; and a condensing portion. A distance between a third wall portion and a fourth wall portion facing each other in a second direction is shorter than a distance between a first wall portion and a second wall portion facing each other in a first direction. The housing is configured to be attached to an attachment portion of a laser processing apparatus, with at least one of the first wall portion, the second wall portion, the third wall portion, and a fifth wall portion disposed on the side of the attachment portion. The condensing portion is disposed on a sixth wall portion, and is offset toward the fourth wall portion in the second direction.

    Laminated element manufacturing method

    公开(公告)号:US11817319B2

    公开(公告)日:2023-11-14

    申请号:US17534835

    申请日:2021-11-24

    CPC classification number: H01L21/268 H01L21/6835 H01L25/0657

    Abstract: A laminated element manufacturing method includes a first forming step of forming a first modified region along a line to cut by irradiating a semiconductor substrate of a first wafer with a laser light along the line to cut, a first grinding step of grinding the semiconductor substrate of the first wafer, a bonding step of bonding a circuit layer of a second wafer to the semiconductor substrate of the first wafer, a second forming step of forming a second modified region along the line to cut by irradiating a semiconductor substrate of the second wafer with a laser light along the line to cut, and a second grinding step of grinding the semiconductor substrate of the second wafer.

    Laser processing method, method for manufacturing semiconductor device, and inspecting device

    公开(公告)号:US11450576B2

    公开(公告)日:2022-09-20

    申请号:US17281458

    申请日:2019-10-02

    Abstract: An inspecting device includes a stage configured to support a wafer in which a plurality of rows of modified regions are formed in a semiconductor substrate, a light source configured to output light, an objective lens configured to pass light propagated through the semiconductor substrate, a light detection part configured to detect light passing through the objective lens, and an inspection part configured to inspect whether or not there is a tip of a fracture in an inspection region between a front surface and the modified region closest to the front surface of the semiconductor substrate. The objective lens positions a virtual focus symmetrical with a focus with respect to the front surface in the inspection region. The light detection part detects light propagating from the back surface side of the semiconductor substrate to the back surface side via the front surface.

    Workpiece cutting method and semiconductor chip

    公开(公告)号:US11270915B2

    公开(公告)日:2022-03-08

    申请号:US16605279

    申请日:2018-04-12

    Inventor: Takeshi Sakamoto

    Abstract: An object cutting method includes a first step of preparing an object including a single crystal material substrate and a functional device layer provided on a first main surface side, a second step of irradiating the object with laser light to form at least one row of modified regions in the substrate and to form a fracture in the object so as to extend between the at least one row of modified regions and a second main surface of the object, and a third step of performing dry etching on the object from the second main surface side to form a groove opening to the second main surface, in the object. In the third step, the at least one row of modified regions is removed to form an uneven region which has an uneven shape and in which single crystal silicon is exposed, in an inner surface of the groove.

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