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    Cutting method
    2.
    发明授权
    Cutting method 有权

    公开(公告)号：US11380586B2

    公开(公告)日：2022-07-05

    申请号：US16632291

    申请日：2018-07-18

    Applicant: IWATANI CORPORATION ,  HAMAMATSU PHOTONICS K.K.

    Inventor： Toshiki Manabe ,  Takehiko Senoo ,  Koichi Izumi ,  Tadashi Shojo ,  Takafumi Ogiwara ,  Takeshi Sakamoto

    IPC: H01L21/78 ,  H01L21/268 ,  H01L21/3065

    Abstract: A cutting method includes: forming a reformed region in a workpiece; and after forming the reformed region in the workpiece, forming a groove in the workpiece along an intended cut line. In the forming a groove, a first dry etching process is performed from a front surface toward a rear surface of the workpiece. After the first dry etching process, a first pressure-reducing process is performed in which the workpiece is placed under an atmosphere of reduced pressure as compared to pressure during the first dry etching process. After the first pressure-reducing process, a second dry etching process is performed from the front surface toward the rear surface of the workpiece.

    DIVIDING METHOD FOR WAFER
    5.
    发明申请
    DIVIDING METHOD FOR WAFER 有权
    分散方法

    公开(公告)号：US20150044857A1

    公开(公告)日：2015-02-12

    申请号：US14454136

    申请日：2014-08-07

    Applicant: DISCO CORPORATION ,  IWATANI CORPORATION

    Inventor： Sakae Matsuzaki ,  Takatoshi Masuda ,  Nozomi Maemoto ,  Yu Yoshino ,  Takehiko Senoo ,  Toshihiro Aida ,  Tomoya Biro

    IPC: H01L21/78 ,  H01L21/3065 ,  H01L21/268

    CPC classification number: H01L21/78 ,  H01L21/02076 ,  H01L21/2686 ,  H01L21/3065

    Abstract: A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

    Abstract translation: 晶片的分割方法包括沿着街道照射激光束以在晶片的内部形成改质区域的步骤，将晶片分成以修改区域给出的起始点开始的各个芯片的步骤，放置 处理室，其中将晶片充电至真空状态并用惰性气体填充处理室;以及将蚀刻气体引入填充有惰性气体的处理室中以蚀刻芯片的侧面的步骤。

    Method and apparatus for supplying mixed gas
    6.
    发明授权
    Method and apparatus for supplying mixed gas 有权
    供应混合气体的方法和装置

    公开(公告)号：US09533268B2

    公开(公告)日：2017-01-03

    申请号：US14511214

    申请日：2014-10-10

    Applicant: Iwatani Corporation ,  CENTRAL GLASS COMPANY, LIMITED

    Inventor： Kunihiko Koike ,  Yu Yoshino ,  Naohisa Makihira ,  Takehiko Senoo ,  Toshihiro Aida ,  Tomoya Biro ,  Hiroshi Ichimaru ,  Masahiro Tainaka

    IPC: B01F5/10 ,  G05D11/13 ,  G05D11/00 ,  B01F15/00 ,  B01F15/02

    CPC classification number: B01F5/10 ,  B01F15/00162 ,  B01F15/005 ,  B01F15/026 ,  G05D11/001 ,  G05D11/138 ,  Y10T137/0391 ,  Y10T137/8766

    Abstract: A method and apparatus, for supplying high-pressure mixed gas of a low-vapor-pressure first gas as an active gas and a high-vapor-pressure second gas, are arranged to reduce an amount of the first gas discarded. The mixed gas in a high-pressure state is supplied from a mixing container to a use point. Upon reduction of pressure in the mixing container to a setpoint as a result of supply to the use point, a predetermined amount of the first gas is charged into a replenishment container connected to the mixing container by a replenishment line having a replenishment valve, and which is evacuated. As the second gas is charged into the replenishment container charged with the first gas, the replenishment valve is opened such that the first gas in the replenishment container is forced out by the second gas, thereby charging the mixing container with the mixed gas in the high-pressure condition.

    Abstract translation: 用于提供作为活性气体的低蒸气压第一气体和高蒸气压的第二气体的高压混合气体的方法和装置被布置成减少废弃的第一气体的量。 高压状态的混合气体从混合容器供给到使用点。 在将混合容器中的压力降低到作为使用点的供给量的设定点时，将预定量的第一气体通过具有补充阀的补充管线装入连接到混合容器的补充容器中，并且 被疏散。 随着第二气体被充入装有第一气体的补充容器中，补充阀打开，使得补充容器中的第一气体被第二气体强制排出，从而将混合容器与高混合气体充满 压力条件

    Dividing method for wafer
    7.
    发明授权
    Dividing method for wafer 有权
    晶圆分割方法

    公开(公告)号：US09159622B2

    公开(公告)日：2015-10-13

    申请号：US14454136

    申请日：2014-08-07

    Applicant: DISCO CORPORATION ,  IWATANI CORPORATION

    Inventor： Sakae Matsuzaki ,  Takatoshi Masuda ,  Nozomi Maemoto ,  Yu Yoshino ,  Takehiko Senoo ,  Toshihiro Aida ,  Tomoya Biro

    IPC: H01L21/78 ,  H01L21/268 ,  H01L21/3065

    CPC classification number: H01L21/78 ,  H01L21/02076 ,  H01L21/2686 ,  H01L21/3065

    Abstract: A dividing method for a wafer includes a step of irradiating a laser beam along streets to form modified regions in an inside of a wafer, a step of dividing the wafer into individual chips beginning with starting points given by the modified regions, a step of placing a processing chamber in which the wafer is charged to a vacuum state and fill the processing chamber with inert gas, and a step of introducing etching gas into the processing chamber filled with the inert gas to etch side faces of the chips.

    Abstract translation: 晶片的分割方法包括沿着街道照射激光束以在晶片的内部形成改质区域的步骤，将晶片分成以修改区域给出的起始点开始的各个芯片的步骤，放置 处理室，其中将晶片充电至真空状态并用惰性气体填充处理室;以及将蚀刻气体引入填充有惰性气体的处理室中以蚀刻芯片的侧面的步骤。

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