STRAIN SENSOR
    25.
    发明申请

    公开(公告)号:US20210356340A1

    公开(公告)日:2021-11-18

    申请号:US17317337

    申请日:2021-05-11

    Abstract: Provided is a strain sensor. The strain sensor according to embodiments of the inventive concept includes a flexible substrate, rigid patterns on the flexible substrate, the rigid patterns including a first pattern and a second pattern spaced apart from the first pattern in a first direction, a first electrode on the first pattern, a second electrode on the second pattern, the second electrode being spaced apart from the first electrode, and a piezoresistive layer connecting the first electrode and the second electrode. Here, each of the rigid patterns may have a stiffness greater than that of the flexible substrate.

    COMPLEX DISPLAY DEVICE
    27.
    发明申请
    COMPLEX DISPLAY DEVICE 有权
    复杂显示设备

    公开(公告)号:US20160266459A1

    公开(公告)日:2016-09-15

    申请号:US15007912

    申请日:2016-01-27

    Abstract: Provided is a complex display device Including a first substrate and an opposed second substrate, a first electrode, an electrochromic layer, a common electrode, an emission part and a second electrode, laminated between the first substrate and the second substrate one by one, and an organic layer disposed between the first electrode and the electrochromic layer, or between the electrochromic layer and the common electrode. The organic layer of the complex display device may include at least one of a hole injection material, a hole transport material and a mixture thereof, or at least one of an electron injection material, an electron transport material or a mixture thereof.

    Abstract translation: 提供了一种复合显示装置,包括第一基板和相对的第二基板,第一电极,电致变色层,公共电极,发射部分和第二电极,一个接一个地层叠在第一基板和第二基板之间,以及 设置在第一电极和电致变色层之间或在电致变色层和公共电极之间的有机层。 复合显示装置的有机层可以包括空穴注入材料,空穴传输材料及其混合物中的至少一种,或电子注入材料,电子传输材料或其混合物中的至少一种。

    METHOD FOR MANUFACTURING STRETCHABLE THIN FILM TRANSISTOR
    29.
    发明申请
    METHOD FOR MANUFACTURING STRETCHABLE THIN FILM TRANSISTOR 有权
    制造可拉伸薄膜晶体管的方法

    公开(公告)号:US20140134840A1

    公开(公告)日:2014-05-15

    申请号:US13846437

    申请日:2013-03-18

    CPC classification number: H01L29/78603 H01L27/1218 H01L27/1262

    Abstract: Provided is a method for manufacturing a stretchable thin film transistor. The method for manufacturing a stretchable thin film transistor includes forming a mold substrate, forming a stretchable insulator on the mold substrate, forming a flat substrate on the stretchable insulator, removing the mold substrate, forming discontinuous and corrugated wires on the stretchable insulator, forming a thin film transistor connected between the wires, and removing the flat substrate.

    Abstract translation: 提供一种制造可拉伸薄膜晶体管的方法。 制造可伸缩薄膜晶体管的方法包括:在模具基板上形成模具基板,形成可拉伸绝缘体,在可伸缩绝缘体上形成平坦的基板,去除模具基板,在可拉伸的绝缘体上形成不连续的和波纹的导线, 连接在电线之间的薄膜晶体管,以及去除平坦的基板。

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