Abstract:
A low-noise toroidal thin film head ("TFH") device has low coil resistance and inductance, especially suitable for very high magnetic recording areal densities and channel frequencies. The length of a toroidal coil turn is only about 20-30% that of the length of an average turn in the conventional planar spiral coil design. This allows either reduction of the device thermal noise (by about 6 dB) and/or increase of the device operational frequency bandwidth (by a factor of 3-5). The toroidal coil coupling efficiency between each turn and the magnetic core is practically 100%, thereby improving the write and read-back efficiencies. In one embodiment a non-via large back-closure contact area is provided between the bottom and top magnetic poles along their entire back-side width, and all other open branches and loose ends in the magnetic circuit are eliminated. The magnetic core has a gradual, smooth toroidal (or a horse-shoe) shape with no loose ends, nooks, crevices, or sharp corners. The larger back-closure contact area decreases the magnetic core reluctance and improves the device efficiency. Utilization of a soft non-magnetic seed-layer, such as gold, eliminates interference noise due to the conventional magnetic (NiFe) seed-layer. Slight mechanical texturing (scratching) of the seed-layer along the intended easy axis helps to define and induce strong magnetic uniaxial anisotropy in the plated magnetic poles. All these features facilitate significant reduction of Barkhausen and other sources of device noise. Embodiments include conventional TFH's, Planar TFH's, Pinched-Gap TFH's, and various versions of Magnetoresistive (MR) TFH's.
Abstract:
An improved method for interconnecting thin film solar cells to form solar cell modules is provided, the method comprising using a flat metallic mesh formed from a thin metallic strip to provide a current collection grid over a thin film solar cell. The method is particularly useful for forming interconnections between thin film solar cells deposited on flexible substrates. The rectangular cross sectional shape of the mesh elements provides an increased area of electrical contact to the solar cell compared to the small tangential area provided by elements of circular cross section. Mesh elements can be made higher rather than wider to improve conductivity without proportionally increasing shading loss. Various coatings can be applied to the mesh to improve its performance, provide corrosion resistance, and improve its cosmetic appearance.
Abstract:
A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1-X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.
Abstract translation:完全通过溅射制造改进的薄膜太阳能电池的方法包括含有由过渡金属氮化物组成的至少一个阻挡层的高效率背接触/反射多层。 使用双圆柱形旋转磁控管技术,由专门制备的导电靶共溅射铜铟镓二硒化物(Cu(In x Ga 1-x)Se 2)吸收层(X为1至约0.7)。 吸收层的带隙可以通过改变镓含量来分级,并且通过用铝部分或全部替换镓来分级。 或者,在硒化氢气体存在下,吸收层从金属合金靶反应溅射。 使用RF溅射沉积含有ZnS的不含镉的窗口层。 顶部透明电极是反应溅射的铝掺杂的ZnO。 描述了一种独特的模块化真空辊对辊溅射机。 该机器适用于采用双圆柱形旋转磁控管技术,以单程制造改进的太阳能电池材料。
Abstract:
A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1-X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.
Abstract translation:完全通过溅射制造改进的薄膜太阳能电池的方法包括含有由过渡金属氮化物组成的至少一个阻挡层的高效率背接触/反射多层。 使用双圆柱形旋转磁控管技术,由专门制备的导电靶共溅射铜铟镓二硒化物(Cu(In x Ga 1-x)Se 2)吸收层(X为1至约0.7)。 吸收层的带隙可以通过改变镓含量来分级,并且通过用铝部分或全部替换镓来分级。 或者,在硒化氢气体存在下,吸收层从金属合金靶反应溅射。 使用RF溅射沉积含有ZnS的不含镉的窗口层。 顶部透明电极是反应溅射的铝掺杂的ZnO。 描述了一种独特的模块化真空辊对辊溅射机。 该机器适用于采用双圆柱形旋转磁控管技术,以单程制造改进的太阳能电池材料。
Abstract:
A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. At least one set of vertically mounted, dual and triple rotatable cylindrical (or planar) magnetrons with associated vacuum pumps, form semi-isolated sputtering modules. The sputtering modules can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point. The apparatus may take the form of a circular arrangement of modules for batch coating of wafer-like substrates, or the modules may be arranged linearly for the coating of large planar substrates
Abstract:
A low-noise toroidal thin film head ("TFH") device has low coil resistance and inductance, especially suitable for very high magnetic recording areal densities and channel frequencies. The length of a toroidal coil turn is only about 20-30% that of the length of an average turn in the conventional planar spiral coil design. This allows either reduction of the device thermal noise (by about 6 dB) and/or increase of the device operational frequency bandwidth (by a factor of 3-5). The toroidal coil coupling efficiency between each turn and the magnetic core is practically 100%, thereby improving the write and read-back efficiencies. In one embodiment a non-via large back-closure contact area is provided between the bottom and top magnetic poles along their entire back-side width, and all other open branches and loose ends in the magnetic circuit are eliminated. The magnetic core has a gradual, smooth toroidal (or a horse-shoe) shape with no loose ends, nooks, crevices, or sharp corners. The larger back-closure contact area decreases the magnetic core reluctance and improves the device efficiency. Utilization of a soft non-magnetic seed-layer, such as gold, eliminates interference noise due to the conventional magnetic (NiFe) seed-layer. Slight mechanical texturing (scratching) of the seed-layer along the intended easy axis helps to define and induce strong magnetic uniaxial anisotropy in the plated magnetic poles. All these features facilitate significant reduction of Barkhausen and other sources of device noise. Embodiments include conventional TFH's, Planar TFH's, Pinched-Gap TFH's, and various versions of Magnetoresistive (MR) TFH's.
Abstract:
A hydrogenated carbon film for magnetic thin film recording media is manufactured by alternating current magnetron sputtering in an atmosphere containing argon and a hydrocarbon gas. Targets mounted side-by-side cyclically sputter and discharge charge buildup according to an alternating current. Shielding between the targets directs electrons toward the anode at a given time.
Abstract:
An apparatus in accordance with the present invention provides a single or multi-layer coating to the surface of a plurality of substrates. The apparatus may include a plurality of buffer and sputtering chambers, and an input end and an output end, wherein said substrates are transported through said chambers of said apparatus at varying rates of speed such that the rate of speed of a pallet from said input end to said output end is a constant for each of said plurality of pallets. A high throughput sputtering apparatus having a plurality of integrally matched components in accordance with the present invention may further include means for transporting a plurality of substrates through said sputtering chambers at variable velocities; means for reducing the ambient pressure within said sputtering chambers to a vacuum level within a pressure range sufficient to enable sputtering operation; means for heating said plurality of substrates to a temperature conducive to sputtering said coatings thereon, said means for heating providing a substantially uniform temperature profile over the surface of said substrates; and control means for providing control signals to and for receiving feedback input from, said sputtering chambers, means for transporting, means for reducing, and means for heating, said control means being programmable for allowing control over said means for sputtering, means for transporting, means for reducing and means for heating.
Abstract:
A sputtering system comprising three concentric cylinders. The inner and outer cylinders, along with top and bottom sealing flanges, form an annular chamber with cylindrical walls. A central cylinder, disposed between the inner and outer cylinders, includes substrate-carrying openings and serves as a cylindrical carriage which substantially fills the annular chamber passageway and is rotatable in predetermined steps relative to the chamber. Substrate processing devices for deposition, etching, heating, and cooling arc attached around the circumference of the inner and/or outer cylinders. Vacuum pumps are located between substrate processing devices. The openings in the cylindrical carriage are each fitted with a substrate holder for supporting a multiplicity of substrates. Entrance and exit vacuum load-locks are provided for transferring substrates into and out of the system. The system is designed for substrate processing temperatures of 1000.degree. C. and above.
Abstract:
An apparatus in accordance with the present invention provides a single or multi-layer coating to the surface of a plurality of substrates. The apparatus may include a plurality of buffer and sputtering chambers, and an input end and an output end, wherein said substrates are transported through said chambers of said apparatus at varying rates of speed such that the rate of speed of a pallet from said input end to said output end is a constant for each of said plurality of pallets. A high throughput sputtering apparatus having a plurality of integrally matched components in accordance with the present invention may further include means for transporting a plurality of substrates through said sputtering chambers at variable velocities; means for reducing the ambient pressure within said sputtering chambers to a vacuum level within a pressure range sufficient to enable sputtering operation; means for heating said plurality of substrates to a temperature conducive to sputtering said coatings thereon, said means for heating providing a substantially uniform temperature profile over the surface of said substrates; and control means for providing control signals to and for receiving feedback input from, said sputtering chambers, means for transporting, means for reducing, and means for heating, said control means being programmable for allowing control over said means for sputtering, means for transporting, means for reducing and means for heating.