公开(公告)号：US20140150843A1

公开(公告)日：2014-06-05

申请号：US14008909

申请日：2012-03-30

Applicant: David B. Pearce ,  Dennis R. Hollars ,  Robert J. Cleereman

Inventor： David B. Pearce ,  Dennis R. Hollars ,  Robert J. Cleereman

IPC: H01L31/048 ,  H01L31/0203

CPC classification number: H01L31/0203 ,  H01L31/02 ,  H02S20/23 ,  H02S20/25 ,  Y02B10/12

Abstract: A photovoltaic system comprises one or more shingle-like photovoltaic (PV) modules, each having a layer of optically transparent material adjacent to a layer of photoactive material configured to generate electricity upon exposure to light from the layer of optically transparent material. In some cases the layer of optically transparent material of each of the one or more shingle-like PV modules has a pattern of depressions in a shingle-like configuration.

Abstract translation: 光伏系统包括一个或多个瓦特状光伏（PV）模块，每个模块具有与光活性材料层相邻的光学透明材料层，其被配置为在暴露于来自光学透明材料层的光时发电。 在一些情况下，一个或多个瓦楞状PV模块中的每一个的光学透明材料层具有瓦楞状结构中的凹陷图案。

公开(公告)号：US06974976B2

公开(公告)日：2005-12-13

申请号：US10671238

申请日：2003-09-24

Applicant: Dennis R. Hollars

Inventor： Dennis R. Hollars

IPC: C23C14/00 ,  C23C14/35 ,  C23C14/56 ,  H01L31/032 ,  H01L31/109

CPC classification number: H01L31/18 ,  C23C14/0057 ,  C23C14/3414 ,  C23C14/352 ,  C23C14/562 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0336 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1−X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

Abstract translation: 完全通过溅射制造改进的薄膜太阳能电池的方法包括含有由过渡金属氮化物组成的至少一个阻挡层的高效率背接触/反射多层。 铜铟镓硒（Cu（In x X Ga 1-X 1）Se 2 2）吸收层（X为1至约0.7） 由专门制备的导电靶使用双圆柱旋转磁控管技术共溅射。 吸收层的带隙可以通过改变镓含量来分级，并且通过用铝部分或全部替换镓来分级。 或者，在硒化氢气体存在下，吸收层从金属合金靶反应溅射。 使用RF溅射沉积含有ZnS的不含镉的窗口层。 顶部透明电极是反应溅射的铝掺杂的ZnO。 描述了一种独特的模块化真空辊对辊溅射机。 该机器适用于采用双圆柱形旋转磁控管技术，以单程制造改进的太阳能电池材料。

公开(公告)号：US4421622A

公开(公告)日：1983-12-20

申请号：US419988

申请日：1982-09-20

Applicant: Dennis R. Hollars

Inventor： Dennis R. Hollars

IPC: C03C17/36 ,  C23C14/00 ,  C23C15/00

CPC classification number: C03C17/3613 ,  C03C17/36 ,  C03C17/3615 ,  C03C17/3618 ,  C03C17/3644 ,  C03C17/366 ,  C03C17/3681 ,  C23C14/0036 ,  C03C2217/78

Abstract: A degradable substrate surface (e.g. a glass sheet covered by a pure metal film) is overcoated with an oxide film deposited by high rate reactive sputtering in the presence of hydrogen to avoid degradation of the substrate. The addition of hydrogen to the sputtering chamber atmosphere substantially eliminates degradation of pure metal films, etc. which would otherwise be damaged during the reactive sputtering of an oxide overcoat. The method is disclosed for producing low emissivity symmetrical three layer coatings formed on a substrate by high rate sputtering with the intermediate layer formed by a conductive silver film and the adjacent layers formed from stoichiometric tin oxide films.Alternatively a degradable substrate surface is overcoated with an oxide film having a thickness exceeding 100 angstroms without degradation by reactively sputtering an extremely thin oxide coating onto the surface at a relatively high sputtering rate and the remainder of the oxide film is thereafter deposited over the thin initial oxide coating. A brief interval is required to enable the initial oxide film to "relax", or take a set, before the additional film is deposited.

Abstract translation: 可降解的基材表面（例如由纯金属膜覆盖的玻璃板）用在氢存在下通过高速反应溅射沉积的氧化膜进行外涂，以避免基材的降解。 向溅射室气氛中加入氢气基本上消除了在氧化物外涂层的反应溅射期间会损坏的纯金属膜等的劣化。 公开了用于通过高速溅射形成在基板上的低辐射率对称三层涂层的方法，其中由中间层形成的中间层由导电银膜形成，相邻层由化学计量氧化锡膜形成。 或者，可降解的衬底表面用厚度超过100埃的氧化膜进行涂覆，而不会通过以相对高的溅射速率将极薄的氧化物膜溅射到表面上而劣化，然后将氧化膜的其余部分沉积在薄的初始 氧化物涂层。 需要一个短暂的时间间隔才能使初始氧化膜在沉积另外的膜之前“松弛”，或者采取一套设置。

公开(公告)号：US08802479B2

公开(公告)日：2014-08-12

申请号：US12793617

申请日：2010-06-03

Applicant: David B. Pearce ,  Bruce D. Hachtmann ,  Liguang Gong ,  Thomas M. Valeri ,  Dennis R. Hollars

Inventor： David B. Pearce ,  Bruce D. Hachtmann ,  Liguang Gong ,  Thomas M. Valeri ,  Dennis R. Hollars

IPC: H01L31/18 ,  H01B5/00

CPC classification number: H01L31/188 ,  H01L31/022433 ,  H01L31/0465 ,  H01L31/048 ,  H01L31/0508 ,  Y02E10/50

Abstract: An improved method for interconnecting thin film solar cells to form solar cell modules is provided, the method comprising using a flat metallic mesh formed from a thin metallic strip to provide a current collection grid over a thin film solar cell. The method is particularly useful for forming interconnections between thin film solar cells deposited on flexible substrates. The rectangular cross sectional shape of the mesh elements provides an increased area of electrical contact to the solar cell compared to the small tangential area provided by elements of circular cross section. Mesh elements can be made higher rather than wider to improve conductivity without proportionally increasing shading loss. Various coatings can be applied to the mesh to improve its performance, provide corrosion resistance, and improve its cosmetic appearance.

Abstract translation: 提供了一种用于互连薄膜太阳能电池以形成太阳能电池模块的改进方法，该方法包括使用由薄金属带形成的扁平金属网，以在薄膜太阳能电池上提供集电栅格。 该方法对于在沉积在柔性基板上的薄膜太阳能电池之间形成互连特别有用。 与由圆形横截面的元件提供的小切向区域相比，网状元件的矩形截面形状提供了与太阳能电池的电接触面积的增加的面积。 网格元素可以更高而不是更宽以提高导电性，而不会成比例地增加阴影损失。 可以将各种涂层施加到网上以改善其性能，提供耐腐蚀性并改善其美观外观。

公开(公告)号：US20130213805A1

公开(公告)日：2013-08-22

申请号：US13766428

申请日：2013-02-13

Applicant: Dennis R. Hollars

Inventor： Dennis R. Hollars

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/3407 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3458

Abstract: Rotatable magnetron sputtering apparatuses are described for depositing material from a target while reducing premature burn through issues. The rotatable magnetron sputtering apparatus includes electric coils wound on pole pieces to modulate the magnetic fields at the ends of the magnetron magnetic assembly. Changing the direction of electric current moves the sputtering region alternately around its normal central position to decrease the rate of erosion depth at the ends of the target material.

Abstract translation: 描述了可旋转磁控溅射装置，用于从目标物中沉积材料，同时通过问题减少过早烧伤。 可旋转磁控管溅射装置包括缠绕在极片上的电磁线圈，以调制磁控管磁性组件末端的磁场。 改变电流方向使溅射区域围绕其正常中心位置交替移动，以降低目标材料端部的侵蚀深度的速率。

公开(公告)号：US08398834B2

公开(公告)日：2013-03-19

申请号：US12753814

申请日：2010-04-02

Applicant: Dennis R. Hollars

Inventor： Dennis R. Hollars

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/3407 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3458

Abstract: Rotatable magnetron sputtering apparatuses are described for depositing material from a target while reducing premature burn through issues. The rotatable magnetron sputtering apparatus includes electric coils wound on pole pieces to modulate the magnetic fields at the ends of the magnetron magnetic assembly. Changing the direction of electric current moves the sputtering region alternately around its normal central position to decrease the rate of erosion depth at the ends of the target material.

Abstract translation: 描述了可旋转磁控溅射装置，用于从目标物中沉积材料，同时通过问题减少过早烧伤。 可旋转磁控管溅射装置包括缠绕在极片上的电磁线圈，以调制磁控管磁性组件末端的磁场。 改变电流方向使溅射区域围绕其正常中心位置交替移动，以降低目标材料端部的侵蚀深度的速率。

公开(公告)号：US20110240468A1

公开(公告)日：2011-10-06

申请号：US12753814

申请日：2010-04-02

Applicant: Dennis R. Hollars

Inventor： Dennis R. Hollars

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/3407 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3458

Abstract: Rotatable magnetron sputtering apparatuses are described for depositing material from a target while reducing premature burn through issues. The rotatable magnetron sputtering apparatus includes electric coils wound on pole pieces to modulate the magnetic fields at the ends of the magnetron magnetic assembly. Changing the direction of electric current moves the sputtering region alternately around its normal central position to decrease the rate of erosion depth at the ends of the target material.

Abstract translation: 描述了可旋转磁控溅射装置，用于从目标物中沉积材料，同时通过问题减少过早烧伤。 可旋转磁控管溅射装置包括缠绕在极片上的电磁线圈，以调制磁控管磁性组件末端的磁场。 改变电流方向使溅射区域围绕其正常中心位置交替移动，以降低目标材料端部的侵蚀深度的速率。

公开(公告)号：US20090145746A1

公开(公告)日：2009-06-11

申请号：US12320087

申请日：2009-01-16

Applicant: Dennis R. Hollars

Inventor： Dennis R. Hollars

IPC: C23C14/34 ,  C22C30/02

CPC classification number: H01L31/18 ,  C23C14/0057 ,  C23C14/3414 ,  C23C14/352 ,  C23C14/562 ,  H01L31/022425 ,  H01L31/0322 ,  H01L31/0336 ,  Y02E10/541 ,  Y02P70/521

Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InxGa1-x)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described. The machine is adapted to incorporate dual cylindrical rotary magnetron technology to manufacture the improved solar cell material in a single pass.

Abstract translation: 完全通过溅射制造改进的薄膜太阳能电池的方法包括含有由过渡金属氮化物组成的至少一个阻挡层的高效率背接触/反射多层。 使用双圆柱形旋转磁控管技术，由专门制备的导电靶共溅射铜铟镓硒（Cu（In x Ga 1-x）Se 2）吸收层（X为1至约0.7）。 吸收层的带隙可以通过改变镓含量来分级，并且通过用铝部分或全部替换镓来分级。 或者，在硒化氢气体存在下，吸收层从金属合金靶反应溅射。 使用RF溅射沉积含有ZnS的不含镉的窗口层。 顶部透明电极是反应溅射的铝掺杂的ZnO。 描述了一种独特的模块化真空辊对辊溅射机。 该机器适用于采用双圆柱形旋转磁控管技术，以单程制造改进的太阳能电池材料。

公开(公告)号：US06365010B1

公开(公告)日：2002-04-02

申请号：US09397445

申请日：1999-09-16

Applicant: Dennis R. Hollars

Inventor： Dennis R. Hollars

IPC: C23C1435

CPC classification number: C23C14/352 ,  C23C14/35 ,  C23C14/568 ,  H01J37/3405

Abstract: A sputtering apparatus and method for high rate deposition of electrically insulating and semiconducting coatings with substantially uniform stoichiometry. Vertically mounted, dual rotatable cylindrical magnetrons with associated vacuum pumps form semi-isolated sputtering modules, which can be independently controlled for the sequential deposition of layers of similar or different materials. Constant voltage operation of AC power with an optional reactive gas flow feedback loop maintains constant coating stoichiometry during small changes in pumping speed caused by substrate motion. The coating method is extremely stable over long periods (days) of operation, with the film stoichiometry being selectable by the voltage control point. The apparatus may take the form of a circular arrangement of modules for batch coating of wafer-like substrates, or the modules may be arranged linearly for the coating of large planar substrates.

Abstract translation: 一种溅射装置和方法，用于以基本上均匀化学计量的方式高速沉积电绝缘和半导体涂层。 具有相关真空泵的垂直安装的双旋转圆柱形磁控管形成半隔离溅射模块，其可以独立地控制用于顺序沉积类似或不同材料的层。 使用可选的反应气体流量反馈回路的交流电源的恒定电压工作在基板运动引起的泵送速度的小变化期间保持恒定的涂层化学计量。 涂覆方法在长时间（天）的操作中非常稳定，膜的化学计量可以通过电压控制点来选择。 该装置可以采用圆形布置的模块的形式，用于批量涂覆晶片状衬底，或者模块可以线性布置以用于大平面衬底的涂覆。

公开(公告)号：US10522695B2

公开(公告)日：2019-12-31

申请号：US13981317

申请日：2012-01-27

Applicant: Ravi Prasad ,  Dennis R. Hollars

Inventor： Ravi Prasad ,  Dennis R. Hollars

IPC: H01L31/0203 ,  C23C14/08 ,  C23C14/56 ,  H01L51/52 ,  C23C16/44 ,  C25B9/08 ,  G02F1/01 ,  G02F1/1339 ,  G02F1/167 ,  H01L21/56 ,  H01L23/00 ,  H01L31/0392 ,  H01L31/049

Abstract: A multilayer stack is described. The multilayer stack includes: (i) one or more inorganic barrier layers for reducing transport of gas or vapor molecules therethrough; (ii) an inorganic reactive layer disposed adjacent to one or more of the inorganic barrier layers, and the reactive layer capable of reacting with the gas or the vapor molecules; and (iii) wherein, in an operational state of the multilayer stack, the vapor or the gas molecules that diffuse through one or more of the inorganic barrier layers react with the inorganic reactive layer, and thereby allow said multilayer stack to be substantially impervious to the gas or the vapor molecules.