Abstract:
A preparation method of an oxide thin-film transistor is disclosed, and this method includes: forming a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode; forming of the active layer, the source electrode and the drain electrode includes: sequentially forming an oxide semiconductor thin film and a source-drain electrode metal thin film on a base substrate, an entire surface of the oxide semiconductor thin film being in direct contact with the source-drain electrode metal thin film; and patterning the oxide semiconductor thin film and the source-drain electrode metal thin film with a dual-tone mask so as to form the active layer, the source electrode and the drain electrode by a single patterning process.
Abstract:
The present application discloses a conductive layer in a semiconductor apparatus, comprising a metal sub-layer and an anti-reflective coating over the metal sub-layer for reducing light reflection on the metal sub-layer; wherein the anti-reflective coating comprises a light absorption sub-layer on the metal sub-layer for reducing light reflection by absorption and a light destructive interference sub-layer on a side of the light absorption layer distal to the metal sub-layer for reducing light reflection by destructive interference; and the metal sub-layer is made of a material comprising M1, wherein M1 is a single metal or a combination of metals; the light absorption sub-layer is made of a material comprising M2OaNb, wherein M2 is a single metal or a combination of metals, a>0, and b≧0; the light destructive interference sub-layer is made of a material comprising M3Oc, wherein M3 is a single metal or a combination of metals, and c>0; the light absorption sub-layer has a refractive index larger than that of the light destructive interference sub-layer.
Abstract:
A light-emitting device and a manufacturing method therefor, a display apparatus comprising the light-emitting device, and an optical detection apparatus comprising the light-emitting device. The light-emitting device includes a substrate, and an anode, a hole injection layer, a hole-transmission layer, a light emitting layer, an electron transmission layer, and a cathode sequentially stacked on the substrate. The material for forming the hole-transmission layer and/or the electron transmission layer includes a photoconductive high polymer material.
Abstract:
An array substrate and manufacturing method thereof, and a display device are capable of preventing light reflection from a drain electrode, and guaranteeing the display effect of the display device. The array substrate includes a drain electrode of a thin film transistor unit, an insulating layer and a pixel electrode. The insulating layer is located between the drain electrode and the pixel electrode, and has a via hole formed therein, and the drain electrode and the pixel electrode are connected through the via hole. A surface of the pixel electrode at the via hole is a rough face.
Abstract:
The present invention provides a COA substrate and a fabricating method thereof as well as a display device, and relates to the field of display technology, which solves the problem of a relatively large parasitic capacitance to be generated between the data line and the common electrode layer because the common electrode layer is formed on the black matrix directly in the existing technical solution, avoids signal delay, and improves the image display quality of the display. The COA substrate comprises: a black matrix, a color filter, a common electrode layer and an organic insulating film layer formed on the black matrix, the common electrode layer is formed on the organic insulating film layer, the organic insulating film layer is arranged on the color filter and covers the position of the color filter; the material of the organic insulating film layer is an organic insulating material having a relative dielectric constant less than 10. The present invention is applied in the fabricating technology of a display device.
Abstract:
An array substrate, a method for fabricating the same and a display device are disclosed. The method for fabricating the array substrate includes: forming a pattern of a gate electrode, a pattern of a gate insulation layer and a pattern of a metal oxide semiconductor active layer on a base substrate; forming an etch stop layer; forming a pattern of a pixel electrode first, and then forming a pattern of a source electrode and a pattern of a drain electrode wherein the pattern of the pixel electrode is connected to the pattern of the metal oxide semiconductor active layer through the pattern of the source electrode or the pattern of the drain electrode. The method can prevent the problem that the pattern of the pixel electrode failing to connect to the pattern of the source electrode or the pattern of the drain electrode.
Abstract:
Embodiments of the invention provide an array substrate, a method for manufacturing the same and a display device. The array substrate comprises a thin film transistor and a pixel electrode electrically connected to a drain electrode of the thin film transistor. The pixel electrode is formed of graphene, or a source electrode and the drain electrode of the thin film transistor are formed of graphene, or the pixel electrode, the source and drain electrodes of the thin film transistor are all formed of graphene.
Abstract:
An array substrate includes gate lines, data lines and an insulating layer. The data lines all extend in a first direction, and the gate lines all extend in a second direction, the first direction intersecting the second direction. A data line includes first line segments and second line segments that all extend in the first direction and are arranged alternately. The second line segments are disposed at a side of the gate lines proximate to the base, and the first line segments are disposed at a side of the gate lines away from the base. There is no overlap among orthographic projections of the first line segments on the base and orthographic projections of the gate lines on the base. The insulating layer includes first vias. In the first direction, any two adjacent first line segments are electrically connected to a second fine segment through at least two first vias.
Abstract:
Provided are a display substrate, a method for manufacturing a display substrate and a display apparatus. The display substrate includes a base, a drive structure layer disposed on the base, a light emitting element disposed on the drive structure layer, an encapsulation layer disposed on the light emitting element, a circular polarizer layer disposed on the encapsulation layer, and a lens definition layer and a lens structure layer disposed on the circular polarizer layer. The light emitting element includes a pixel definition layer provided with a plurality of sub-pixel openings; the lens structure layer includes a plurality of lenses disposed at intervals, the lens definition layer is disposed in a gap region between adjacent lenses, and an orthographic projection of each lens on the base contains an orthographic projection of a sub-pixel opening on the base.
Abstract:
The present disclosure belongs to the field of display technology, and provides an optical module, a manufacturing method thereof, and a display device. The optical module includes: a substrate; a barrier structure arranged on the substrate; a black matrix arranged within the barrier structure, an orthogonal projection of the black matrix onto the substrate not going beyond a region surrounded by the barrier structure; and optical lenses arranged on a side of the black matrix away from the substrate. An orthogonal projection of a gap between adjacent optical lenses onto the substrate falls into the black matrix.