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21.发明申请公开(公告)号：US20180315961A1
公开(公告)日：2018-11-01
申请号：US15802431
申请日：2017-11-02
Inventor： Jun Wang , Ce Zhao , Dongfang Wang , Bin Zhou
CPC classification number: H01L51/56 , H01L27/3237 , H01L51/5072 , H01L51/5209 , H01L51/5218 , H01L51/5225 , H01L51/5275
Abstract: The present disclosure provides a method for manufacturing an organic electroluminescence device, including steps of: adjusting a grating period of a periodic grating structure in such a manner that a wavelength of an emergent light beam caused by SP-coupling is within a predetermined range of a light-emission peak of the organic electroluminescence device; and forming the periodic grating structure in the organic electroluminescence device in accordance with the obtained grating period by adjustment.
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公开(公告)号：US20240363737A1
公开(公告)日：2024-10-31
申请号：US18769204
申请日：2024-07-10
Inventor： Jun Liu , Luke Ding , Jingang Fang , Bin Zhou , Leilei Cheng , Wei Li
IPC: H01L29/66 , H01L21/027 , H01L21/311 , H01L21/3213 , H01L21/44 , H01L21/475 , H01L21/4757 , H01L21/4763 , H01L27/12 , H01L29/40 , H01L29/417 , H01L29/786
CPC classification number: H01L29/66969 , H01L21/0274 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L21/44 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1288 , H01L29/401 , H01L29/7869 , H01L29/41733 , H01L29/78633
Abstract: Provided are a manufacturing method of a display substrate, a display substrate, and a display device. The display substrate includes: a base substrate; and a top-gate type thin film transistor located on a side of the base substrate, the top-gate type thin film transistor comprises an active layer, a gate insulation layer and a gate electrode sequentially disposed in a direction away from the base substrate. A side surface of the gate insulation layer close to the gate electrode extends beyond an edge of the gate electrode in a direction parallel to the base substrate, and a side surface of the active layer close to the gate insulation layer extends beyond an edge of the gate insulation layer in the direction parallel to the base substrate.
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公开(公告)号：US20240276818A1
公开(公告)日：2024-08-15
申请号：US18023447
申请日：2022-03-16
Inventor： Ning Liu , Can Yuan , Xinxin Wang , Yu Wang , Bin Zhou , Dacheng Zhang , Liangchen Yan
IPC: H10K59/131 , H10K59/12 , H10K59/122 , H10K71/16 , H10K71/60 , H10K102/00
CPC classification number: H10K59/1315 , H10K59/1201 , H10K59/122 , H10K71/16 , H10K71/60 , H10K2102/3026
Abstract: The present disclosure provides a display substrate, a manufacturing method thereof and a display device. The display substrate includes: a substrate structure including a base substrate; and a light-emitting structure, a pixel defining layer and a connection structure wherein the light-emitting structure includes a conductive structure layer, a first light-emitting layer and a first electrode layer. The connection structure includes a first conductive layer, a second conductive layer and a top structure, wherein an orthographic projection of the second conductive layer on the base substrate is inside an orthographic projection of the top structure on the base substrate, and the top structure includes a second light-emitting layer, wherein an orthographic projection of the first light-emitting layer on the base substrate partially overlaps with an orthographic projection of the second light-emitting layer on the base substrate.
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公开(公告)号：US11637127B2
公开(公告)日：2023-04-25
申请号：US17206254
申请日：2021-03-19
Inventor： Jun Liu , Liangchen Yan , Bin Zhou , Yang Zhang , Tongshang Su , Wei Li , Liusong Ni
IPC: H01L27/00 , H01L29/00 , H01L27/12 , H01L29/786
Abstract: A display substrate, a method for forming the display substrate and a display device are provided. The display substrate includes: a first conductive pattern located on a base substrate, where a ring-shaped conductive protection structure is arranged at an edge of a preset region of the first conductive pattern and surrounds the preset region, and the conductive protection structure is made of an anti-dry-etching material; an insulation layer covering the first conductive pattern; and a second conductive pattern located on a side of the insulation layer away from the first conductive pattern, where the second conductive pattern is electrically connected to the first conductive pattern through the via-hole.
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25.发明授权公开(公告)号：US11579525B2
公开(公告)日：2023-02-14
申请号：US16458341
申请日：2019-07-01
Inventor： Wei Li , Jingjing Xia , Bin Zhou , Jun Liu , Tongshang Su , Yang Zhang , Liangchen Yan
Abstract: Disclosed are a photoresist composition, a pixel definition structure and a manufacturing method thereof, and a display panel. The photoresist composition includes an organic film-forming resin, a superhydrophobic polymerizable monomer, a polyfunctional crosslinkable polymerizable monomer, a photoinitiator, an additive and a solvent.
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Patent Agency Ranking
公开(公告)号：US11444128B2
公开(公告)日：2022-09-13
申请号：US16338935
申请日：2018-09-20
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Tongshang Su , Ming Wang , Ce Zhao , Bin Zhou
IPC: H01L27/32
Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.
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公开(公告)号：US11347148B2
公开(公告)日：2022-05-31
申请号：US16086990
申请日：2018-02-12
Inventor： Wei Li , Bin Zhou , Jun Liu , Ning Liu , Yang Zhang , Yingbin Hu
Abstract: A patterning method and a method for manufacturing an array substrate are provided, and the patterning method includes: forming a photolithography auxiliary film and a positive photoresist film in turn on a base substrate provided with a layer to be patterned; subjecting the photolithography auxiliary film and the positive photoresist film to a photolithography process to form a photolithography auxiliary layer pattern and a positive photoresist pattern; patterning the layer to be patterned; and UV irradiating the photolithography auxiliary layer pattern and the positive photoresist pattern and then removing the photolithography auxiliary layer pattern and the positive photoresist pattern.
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公开(公告)号：US11287333B2
公开(公告)日：2022-03-29
申请号：US16614788
申请日：2019-05-17
Inventor： Qinghe Wang , Dongfang Wang , Bin Zhou , Ce Zhao , Tongshang Su , Leilei Cheng , Yang Zhang , Guangyao Li
Abstract: A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.
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29.发明申请公开(公告)号：US20210335848A1
公开(公告)日：2021-10-28
申请号：US16484414
申请日：2018-10-12
Inventor： Yang Zhang , Tongshang Su , Bin Zhou , Wei Li , Wei Song , Jun Liu
IPC: H01L27/12
Abstract: A substrate for an electronic device includes an insulating layer; a via extending into the insulating layer; a light shielding layer in the via; and a thin film transistor comprising an active layer on the light shielding layer and in the via. The light shielding layer is configured to shield light from irradiating on the active layer.
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公开(公告)号：US20210335604A1
公开(公告)日：2021-10-28
申请号：US16487552
申请日：2019-02-20
Inventor： Yuankui Ding , Heekyu Kim , Liangchen Yan , Ce Zhao , Bin Zhou , Yingbin Hu , Wei Song , Dongfang Wang
Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
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