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公开(公告)号：US10916662B2
公开(公告)日：2021-02-09
申请号：US16528622
申请日：2019-08-01
Applicant: BOE Technology Group Co., Ltd.
Inventor： Feng Guan , Guangcai Yuan , Zhi Wang , Chen Xu , Qi Yao , Zhanfeng Cao , Ce Ning , Woobong Lee , Lei Chen
IPC: H01L29/786 , H01L27/12
Abstract: An oxide thin film transistor, an array substrate, and preparation methods thereof are disclosed. The method for preparing an oxide thin film transistor comprises a step of forming a pattern comprising an oxide semiconductor active layer on a substrate, wherein the step comprises: forming an amorphous oxide semiconductor thin film on the substrate; performing an excimer laser annealing, at least at a position in the amorphous oxide semiconductor thin film corresponding to a channel region of oxide semiconductor active layer to be formed, such that the amorphous oxide semiconductor material at the laser-annealed position is crystallized, to form a crystalline oxide semiconductor material; and forming the pattern comprising the oxide semiconductor active layer.
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公开(公告)号：US12150352B2
公开(公告)日：2024-11-19
申请号：US17425198
申请日：2020-09-24
Inventor： Cong Liu , Yao Huang , Yuanyou Qiu , Binyan Wang , Zhi Wang
IPC: H10K59/131 , H10K59/12 , H10K59/65 , H10K71/00
Abstract: A display panel, a display apparatus, a manufacturing method of the display panel are provided. The display panel includes a light-transmitting area including: a first light-transmitting area with multiple light-emitting units distributed at intervals; a second light-transmitting area with multiple light-emitting driving units capable of transmitting light. The first light-transmitting area is connected with the second light-transmitting area; each light-emitting unit is connected with a light-emitting driving unit, the light-emitting driving units are configured to drive the connected light-emitting units to emit light; some light-emitting units are connected with the light-emitting driving units through first connecting wires in the light-transmitting area, some light-emitting units are connected with the light-emitting driving units through second connecting wires outside the light-transmitting area; the second connecting wires are along an edge of the light-transmitting area.
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公开(公告)号：US11810506B2
公开(公告)日：2023-11-07
申请号：US17608746
申请日：2021-02-10
Inventor： Yao Huang , Rui Wang , Benlian Wang , Haigang Qing , Zhi Wang
IPC: G09G3/3233
CPC classification number: G09G3/3233 , G09G2300/0842 , G09G2310/061 , G09G2320/0233 , G09G2320/0247
Abstract: A pixel circuit, driving method for same and display apparatus are provided. The pixel circuit includes a driving sub-circuit, writing sub-circuit, compensation sub-circuit, first reset sub-circuit, first and second emitting control sub-circuits, and emitting element. The compensation sub-circuit writes signal of third node into first node under control of third scanning signal terminal, and compensates first node under control of the third scanning signal terminal and first voltage terminal. The first reset sub-circuit writes signal of first initial signal terminal into third node under control of first scanning signal terminal and first emitting control signal terminal. The second emitting control sub-circuit provides signal of first voltage terminal for second node under control of second emitting control signal terminal. The first emitting control sub-circuit provides signal of third node for fourth node under control of the first emitting control signal terminal, allows driving current to flow between third and fourth nodes.
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公开(公告)号：US11309427B2
公开(公告)日：2022-04-19
申请号：US16642638
申请日：2019-03-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zhi Wang , Guangcai Yuan , Feng Guan , Chen Xu , Xueyong Wang , Jianhua Du , Chao Li , Lei Chen
IPC: H01L29/78 , H01L29/786 , H01L29/66
Abstract: The present disclosure relates to a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a first semiconductor layer, a gate dielectric layer, and a gate electrode sequentially stacked on the substrate, the first semiconductor layer has a first portion located in a channel region of the thin film transistor and a second portion in source/drain regions of the thin film transistor and located on both sides of the first portion, the second portion and first sub-portions of the first portion adjacent to the second portion include an amorphous semiconductor material, a second sub-portion of the first portion between the first sub-portions includes a polycrystalline semiconductor material, and a second semiconductor layer located in the source/drain regions and in contact with the second portion, wherein a conductivity of the second semiconductor layer is higher than a conductivity of the amorphous semiconductor material.
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25.发明授权公开(公告)号：US11282469B2
公开(公告)日：2022-03-22
申请号：US16640726
申请日：2019-09-23
Inventor： Yunze Li , Ni Yang , Qi Hu , Jianfeng Liu , Zhi Wang
Abstract: The embodiments of the present disclosure disclose a shift register unit and a method for driving the same, a gate driving circuit, and a display apparatus. The shift register unit includes: an input circuit configured to output an input signal from an input signal terminal to a pull-up node; an output circuit configured to output a clock signal from a clock signal terminal to an output signal terminal under control of a potential at the pull-up node; a resetting and de-noising circuit configured to reset and de-noise the pull-up node and the output signal terminal under control of a potential at a pull-down node; and a pull-down node control circuit coupled to a first voltage terminal and the pull-down node, and configured to electrically couple the pull-down node to the first voltage terminal under control of the potential at the pull-down node.
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Patent Agency Ranking
公开(公告)号：US11264384B2
公开(公告)日：2022-03-01
申请号：US16642723
申请日：2019-03-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Zhi Wang , Feng Guan , Guangcai Yuan , Chen Xu , Lei Chen
IPC: H01L27/092 , H01L21/8238 , H01L29/66 , H01L29/786
Abstract: The disclosure relates to a CMOS structure and a manufacturing method thereof. The CMOS structure includes a substrate and an N-type TFT and a P-type TFT on the substrate. The N-type TFT includes a first gate electrode, a first active layer, and a first gate dielectric layer therebetween. The first active layer includes a first semiconductor layer, a second semiconductor layer of the N-type, and a third semiconductor layer of the N-type which are located at opposite ends of the first semiconductor layer and sequentially stacked in a direction away from the first gate dielectric layer. An N-type doping concentration of the second semiconductor layer is smaller than that of the third semiconductor layer. The P-type TFT includes a fifth semiconductor layer and a sixth semiconductor layer. A P-type doping concentration of the fifth semiconductor layer is smaller than that of the sixth semiconductor layer.
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27.发明申请公开(公告)号：US20220020864A1
公开(公告)日：2022-01-20
申请号：US17210615
申请日：2021-03-24
Applicant: BOE Technology Group Co., Ltd.
Inventor： Lizhen ZHANG , Zhi Wang , Yi Zhou , Wei He , Sheng XU , Huili Wu , Fang He , Xuefei Zhao , Shipei Li , Renquan Gu , Wusheng Li , Qi Yao , Jaiil Ryu
IPC: H01L29/66 , H01L29/06 , H01L29/417 , H01L29/786
Abstract: The present disclosure discloses a thin film transistor, a method for manufacturing thereof, an array substrate and a display device. The method for manufacturing the thin film transistor includes: forming a nanowire active layer on one side of a base substrate; forming a conductive protective layer on one side of the nanowire active layer away from the base substrate; forming an insulating layer on one side of the protective layer away from the nanowire active layer; etching the insulating layer using a dry etching process to form a first via hole exposing a first region of the protective layer and a second via hole exposing a second region of the protective layer; and forming a source-drain layer on one side of the insulating layer away from the protective layer, wherein the source-drain layer includes a first electrode and a second electrode.
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公开(公告)号：US11183610B2
公开(公告)日：2021-11-23
申请号：US16909526
申请日：2020-06-23
Applicant: BOE Technology Group Co., Ltd.
Inventor： Chao Li , Jianhua Du , Feng Guan , Yupeng Gao , Zhaohui Qiang , Zhi Wang , Yang Lyu , Chao Luo
IPC: H01L31/105 , H01L27/12 , H01L31/12 , H01L31/18
Abstract: The present disclosure discloses a photoelectric detector, a preparation method thereof, a display panel and a display device. The photoelectric detector includes a base, and a thin film transistor (TFT) and a photosensitive PIN device on the base, wherein the PIN device includes an I-type region that does not overlap with an orthographic projection of the TFT on the base; a first etching barrier layer covering a top surface of the I-type region; a first heavily doped region in contact with a side surface on a side, proximate to the TFT, of the I-type region; and a second heavily doped region in contact with a side surface on a side, away from the TFT, of the I-type region, the doping types of the first heavily doped region and the second heavily doped region being different from each other.
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公开(公告)号：US10983620B2
公开(公告)日：2021-04-20
申请号：US16604672
申请日：2019-05-22
Inventor： Xuebo Liang , Xiuzhu Tang , Shuai Chen , Shuang Hu , Xing Dong , Lijun Xiong , Zhenguo Tian , Taoliang Tang , Zhi Wang
Abstract: A touch display module, a controlling method, a panel and a display device are provided in embodiments of the disclosure, all belong to the technical field of display technology, the touch display module including: a touch circuit, an auxiliary circuit, a base substrate, a plurality of electrode blocks and a plurality of electrode lines; the touch circuit is configured to provide the plurality of electrode lines with respective display signals at a display stage, and to provide the plurality of electrode lines with respective touch signals at a touch stage; and the auxiliary circuit is configured to provide the plurality of electrode lines with respective display signals at the display stage, and to stop providing the plurality of electrode lines with the respective display signals at the touch stage.
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公开(公告)号：US12262600B2
公开(公告)日：2025-03-25
申请号：US17636655
申请日：2021-03-31
Inventor： Zhi Wang , Yue Long , Weiyun Huang , Yao Huang , Benlian Wang , Lili Du , Yudiao Cheng , Bo Shi
IPC: H10K59/126 , H10K59/12 , H10K59/123 , H10K59/131
Abstract: The present application discloses a display panel, a display device and a method for manufacturing a display panel. The display panel includes a first display area, including a plurality of first light emitting units and a first driving layer for driving the plurality of first light emitting units, and a second display area, at least partially surrounded by the first display area, and making ambient light at least partially transmitted. The first driving layer includes a first light shielding pattern, the first light shielding pattern at least partially surrounding the second display area and including a hollow structure which exposes at least part of the second display area.
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