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21.发明授权公开(公告)号：US09960189B2
公开(公告)日：2018-05-01
申请号：US15436141
申请日：2017-02-17
Applicant: BOE Technology Group Co., Ltd.
Inventor： Ce Zhao , Chunsheng Jiang , Guangcai Yuan
IPC: H01L29/10 , H01L27/12 , H01L29/786
CPC classification number: H01L27/1225 , H01L21/02565 , H01L21/426 , H01L29/24 , H01L29/66969 , H01L29/78606 , H01L29/78618 , H01L29/7869
Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a gate insulating layer, a metal oxide semiconductor (MOS) active layer, a source electrode and a drain electrode on a substrate. The MOS active layer includes forming a pattern layer of indium oxide series binary metal oxide including a first pattern directly contacting with the source electrode and the drain electrode. An insulating layer formed over the source electrode and the drain electrode acts as a protection layer, the pattern layer of indium oxide series binary metal oxide is implanted with metal doping ions by using an ion implanting process, and is annealed, so that the indium oxide series binary metal oxide of the third pattern is converted into the indium oxide series multiple metal oxide to form the MOS active layer.
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公开(公告)号：US11700688B2
公开(公告)日：2023-07-11
申请号：US17183909
申请日：2021-02-24
Inventor： Yongchao Huang , Qinghe Wang , Haitao Wang , Jun Liu , Jun Cheng , Ce Zhao , Liangchen Yan
CPC classification number: H05K1/09 , H05K3/04 , H05K2201/10128
Abstract: The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. The display substrate includes a first conductive line extending in a first direction on a base substrate, a second conductive line extending in a second direction crossing the first direction on the base substrate, and an insulation layer arranged between the first conductive line and the second conductive line. The display substrate further includes a buffer layer arranged between the first conductive line and the base substrate, a groove extending in the first direction is formed in the buffer layer, the first conductive line is arranged in the groove, and a surface of the first conductive line away from the base substrate is flush with a surface of the buffer layer away from the base substrate.
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公开(公告)号：US11545510B2
公开(公告)日：2023-01-03
申请号：US17054823
申请日：2020-04-16
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Yingbin Hu , Qinghe Wang , Wei Li , Liusong Ni
Abstract: This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.
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公开(公告)号：US11444128B2
公开(公告)日：2022-09-13
申请号：US16338935
申请日：2018-09-20
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dongfang Wang , Tongshang Su , Ming Wang , Ce Zhao , Bin Zhou
IPC: H01L27/32
Abstract: An OLED display substrate, a manufacturing method and a display device are provided. The OLED display substrate includes a base substrate and a plurality of pixel units arranged on the base substrate, each pixel unit includes a plurality of subpixel units, and each subpixel unit includes a switching TFT and a bottom-emission OLED, the OLED display substrate further includes a light-shielding layer arranged between the OLED and the switching TFT, and an orthogonal projection of the light-shielding layer onto the base substrate completely covers an orthogonal projection of a semiconductor region of the switching TFT onto the base substrate.
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公开(公告)号：US11287333B2
公开(公告)日：2022-03-29
申请号：US16614788
申请日：2019-05-17
Inventor： Qinghe Wang , Dongfang Wang , Bin Zhou , Ce Zhao , Tongshang Su , Leilei Cheng , Yang Zhang , Guangyao Li
Abstract: A pressure sensing unit includes: a first substrate and a second substrate opposite to each other; and at least one vertical thin film transistor disposed between the first substrate and the second substrate. Each vertical thin film transistor includes a first electrode, a semiconductor active layer, a second electrode, at least one insulating support, and a gate electrode sequentially disposed in a direction extending from the first substrate to the second substrate. A first air gap is formed by the presence of the at least one insulating support between the gate electrode and the second electrode of each vertical thin film transistor.
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Patent Agency Ranking
公开(公告)号：US20210335604A1
公开(公告)日：2021-10-28
申请号：US16487552
申请日：2019-02-20
Inventor： Yuankui Ding , Heekyu Kim , Liangchen Yan , Ce Zhao , Bin Zhou , Yingbin Hu , Wei Song , Dongfang Wang
Abstract: A method of fabricating a display substrate is provided. The method includes forming a conductive layer on a base substrate; and performing a chemical vapor deposition process to form an oxide layer on a side of an exposed surface of the conductive layer away from the base substrate, the exposed surface of the conductive layer including copper, the oxide layer formed to include an oxide of a target element M. The chemical vapor deposition process is performed using a mixture of a first reaction gas including oxygen and a second reaction gas including the target element M, at a reaction temperature in a range of 200 Celsius degrees to 280 Celsius degrees. A mole ratio of oxygen element to the target element M in the mixture of the first reaction gas and the second reaction gas is in a range of 40:1 to 60:1.
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公开(公告)号：US11114469B2
公开(公告)日：2021-09-07
申请号：US16396726
申请日：2019-04-28
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Bin Zhou , Binbin Cao , Liangchen Yan , Dongfang Wang , Ce Zhao , Luke Ding , Jun Liu
IPC: H01L27/12
Abstract: The present disclosure is in the field of display technologies, and provides an array substrate including an IGZO film layer, a gate layer, and a gate insulating layer. The gate layer is provided with broken lines at a position thereof overlapping the IGZO film layer to form a first gate line and a second gate line. The gate insulating layer is disposed between the IGZO film layer and the gate layer, and is provided with at least two through holes thereon, in which the first gate line is connected with the IGZO film layer through one of the through holes, and the second gate line is connected with the IGZO film layer through another through hole, thus, connecting the IGZO film layer in series into the gate layer.
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公开(公告)号：US11069758B2
公开(公告)日：2021-07-20
申请号：US16436201
申请日：2019-06-10
Inventor： Wei Song , Liangchen Yan , Ce Zhao , Dongfang Wang , Bin Zhou , Yuankui Ding , Jun Liu , Yingbin Hu , Wei Li
Abstract: The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.
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29.发明授权公开(公告)号：US10818798B2
公开(公告)日：2020-10-27
申请号：US16410823
申请日：2019-05-13
Inventor： Yingbin Hu , Ce Zhao , Yuankui Ding , Jun Wang , Jun Liu , Guangyao Li , Yongchao Huang , Wei Li , Liangchen Yan
IPC: H01L29/786 , H01L29/66 , H01L27/12
Abstract: A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.
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30.发明申请公开(公告)号：US20200152458A1
公开(公告)日：2020-05-14
申请号：US16442830
申请日：2019-06-17
Inventor： Wei Song , Ce Zhao , Heekyu Kim , Ning Liu , Yuankui Ding , Wei Li , Yingbin Hu
Abstract: A metal oxide film and a manufacturing method thereof, a thin film transistor and an array substrate are provided. The manufacturing method of the metal oxide film includes: forming a metal oxide film on a base substrate; and suppling a negative ion to the metal oxide film for a preset time period by performing a anodization method, to convert a portion of metal ions in the metal oxide film into a metal oxide.
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