公开(公告)号：US20220341025A1

公开(公告)日：2022-10-27

申请号：US17857370

申请日：2022-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenting HOU ,  Jianxin LEI ,  Jothilingam RAMALINGAM ,  Prashanth KOTHNUR ,  William R. JOHANSON

IPC: C23C14/18 ,  C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/14 ,  C23C14/16

Abstract: Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.

公开(公告)号：US20210320246A1

公开(公告)日：2021-10-14

申请号：US16845600

申请日：2020-04-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong WANG ,  Renu WHIG ,  Jianxin LEI ,  Rongjun WANG

IPC: H01L43/12 ,  H01L43/10

Abstract: A method of forming a tunnel layer of a magnetoresistive random-access memory (MRAM) structure includes forming a first magnesium oxide (MgO) layer by sputtering an MgO target using radio frequency (RF) power, exposing the first MgO layer to oxygen for approximately 5 seconds to approximately 20 seconds at a flow rate of approximately 10 sccm to approximately 15 sccm, and forming a second MgO layer on the first MgO layer by sputtering the MgO target using RF power. The method may be performed after periodic maintenance of a process chamber to increase the tunnel magnetoresistance (TMR) of the tunnel layer.

公开(公告)号：US20210317568A1

公开(公告)日：2021-10-14

申请号：US16846505

申请日：2020-04-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Chao DU ,  Xing CHEN ,  Keith A. MILLER ,  Jothilingam RAMALINGAM ,  Jianxin LEI

IPC: C23C14/34 ,  H01J37/32

Abstract: Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

公开(公告)号：US20180337052A1

公开(公告)日：2018-11-22

申请号：US16052135

申请日：2018-08-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Jothilingam RAMALINGAM ,  Thanh X. NGUYEN ,  Zhiyong WANG ,  Jianxin LEI ,  Xianmin TANG

IPC: H01L21/285 ,  H01L21/326 ,  H01J37/34 ,  C23C14/18 ,  C23C14/35 ,  C23C14/34 ,  C23C14/56

CPC classification number: H01L21/2855 ,  C23C14/185 ,  C23C14/3407 ,  C23C14/345 ,  C23C14/35 ,  C23C14/568 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3435 ,  H01L21/326

Abstract: Systems and methods for sputtering a layer of refractory metal layer onto a barrier layer disposed on a substrate are disclosed herein. In one or more embodiments, a method of sputter depositing a tungsten structure includes: moving a substrate into a plasma processing chamber and onto a substrate support in opposition to a sputter target assembly comprising a tungsten target having no more than ten parts per million of carbon and no more than ten parts per million of oxygen present as impurities; and generating a plasma within the plasma processing chamber to deposit, by sputtering, a tungsten film layer on a material layer of a substrate supported by the substrate support. In some embodiments, the target assembly further includes a titanium backing plate and an aluminum bonding layer disposed between the titanium backing plate and the tungsten target.

公开(公告)号：US20140001576A1

公开(公告)日：2014-01-02

申请号：US13922063

申请日：2013-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Srinivas GANDIKOTA ,  Zhendong LIU ,  Jianxin LEI ,  Rajkumar JAKKARAJU

IPC: H01L21/768 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/40114 ,  H01L21/28061 ,  H01L21/285 ,  H01L21/2855 ,  H01L21/28568 ,  H01L21/76889 ,  H01L27/10873 ,  H01L29/4941 ,  H01L29/66477 ,  H01L29/78

Abstract: Semiconductor devices, methods and apparatus for forming the same are provided. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal silicon nitride film layer on the conductive film layer, and a tungsten film layer on the refractory metal silicon nitride film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal silicon nitride film layer on the conductive film layer and depositing a tungsten film layer on the refractory metal silicon nitride film layer.

Abstract translation: 提供了用于形成半导体器件的方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 栅极电极堆叠包括在栅极电介质层上的导电膜层，导电膜层上的难熔金属氮化硅膜层和难熔金属氮化硅膜层上的钨膜层。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化硅膜层，并在难熔金属氮化硅膜层上沉积钨膜层。