公开(公告)号：US20230021761A1

公开(公告)日：2023-01-26

申请号：US17961224

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Yang YANG ,  Pramit MANNA ,  Kartik RAMASWAMY ,  Takehito KOSHIZAWA ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/26 ,  H01L21/033

Abstract: Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350° C., exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

公开(公告)号：US20210210339A1

公开(公告)日：2021-07-08

申请号：US15778167

申请日：2017-12-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Pramit MANNA ,  Rui CHENG ,  Abhijit Basu MALLICK ,  Shishi JIANG

IPC: H01L21/02

Abstract: A method for forming a conformal hermetic silicon nitride film. The method includes using thermal chemical vapor deposition with a polysilane gas to produce an ultra-conformal amorphous silicon film on a substrate, then treating the film with ammonia or nitrogen plasmas to convert the amorphous silicon film to a conformal hermetic silicon nitride. In some embodiments, the amorphous silicon deposition and the plasma treatment are performed in the same processing chamber. In some embodiments, the amorphous silicon deposition and the plasma treatment are repeated until a desired silicon nitride film thickness is reached.

公开(公告)号：US20210025058A1

公开(公告)日：2021-01-28

申请号：US17041403

申请日：2019-04-01

Applicant: Applied Materials, Inc.

Inventor： Shishi JIANG ,  Pramit MANNA ,  Abhijit Basu MALLICK ,  Suresh Chand SETH ,  Srinivas D. NEMANI

IPC: C23C16/505 ,  H01L21/3205 ,  H01L21/321 ,  H01J37/32 ,  C23C16/24 ,  C23C16/56

Abstract: Embodiments herein provide methods of plasma treating an amorphous silicon layer deposited using a flowable chemical vapor deposition (FCVD) process. In one embodiment, a method of processing a substrate includes plasma treating an amorphous silicon layer by flowing a substantially silicon-free hydrogen treatment gas into a processing volume of a processing chamber, the processing volume having the substrate disposed on a substrate support therein, forming a treatment plasma of the substantially silicon-free hydrogen treatment gas, and exposing the substrate having the amorphous silicon layer deposited on a surface thereof to the treatment plasma. Herein, the amorphous silicon layer is deposited using an FCVD process. The FCVD process includes positioning the substrate on the substrate support, flowing a processing gas into the processing volume, forming a deposition plasma of the processing gas, exposing the surface of the substrate to the deposition plasma, and depositing the amorphous silicon layer on the surface of the substrate.

公开(公告)号：US20200075329A1

公开(公告)日：2020-03-05

申请号：US16679899

申请日：2019-11-11

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/04 ,  H01L21/762 ,  C23C16/24 ,  C23C16/505

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon (a-Si) film that involves pretreating the surface of the substrate to modify the underlying hydroxy-terminated silicon (Si—OH) or hydrogen-terminated silicon (Si—H) surface to oxynitride-terminated silicon (Si—ON) or nitride-terminated silicon (Si—N) and enhance the subsequent a-Si deposition are provided. First, a substrate having features formed in a first surface of the substrate is provided. The surface of the substrate is then pretreated to enhance the surface of the substrate for the flowable deposition of amorphous silicon that follows. A flowable deposition process is then performed to deposit a flowable silicon layer over the surface of the substrate. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20190393042A1

公开(公告)日：2019-12-26

申请号：US16554834

申请日：2019-08-29

Applicant: Applied Materials, Inc.

Inventor： Susmit SINGHA ROY ,  Kelvin CHAN ,  Hien Minh LE ,  Sanjay KAMATH ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA ,  Karthik JANAKIRAMAN

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/40 ,  C23C16/505 ,  C23C28/00 ,  H01L21/02 ,  H01L21/3205 ,  C23C16/06 ,  H01L21/768

Abstract: Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.

公开(公告)号：US20190074218A1

公开(公告)日：2019-03-07

申请号：US16184117

申请日：2018-11-08

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Rui CHENG ,  Kelvin CHAN ,  Abhijit Basu MALLICK

IPC: H01L21/768 ,  C23C16/46 ,  C23C16/34 ,  C23C16/16 ,  H01L21/285 ,  C23C16/04

Abstract: Methods for forming thin films in high aspect ratio feature definitions are provided. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a metal organic containing precursor gas comprising a ligand into an interior processing volume of a process chamber, flowing a precursor gas comprising the ligand into the processing volume and thermally decomposing the metal-containing precursor gas comprising the ligand and the precursor gas comprising the ligand in the interior processing volume to deposit a metal-containing layer over at least one or more sidewalls and a bottom surface of a feature definition in and below a surface of a dielectric layer on the substrate.

公开(公告)号：US20180294154A1

公开(公告)日：2018-10-11

申请号：US15936740

申请日：2018-03-27

Applicant: Applied Materials, Inc.

Inventor： Pramit MANNA ,  Shishi JIANG ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  H01L21/762 ,  C23C16/04

CPC classification number: H01L21/02532 ,  C23C16/0245 ,  C23C16/045 ,  C23C16/24 ,  C23C16/505 ,  H01L21/0243 ,  H01L21/02488 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/76224

Abstract: Methods for gapfilling semiconductor device features, such as high aspect ratio trenches, with amorphous silicon (a-Si) film that involves pretreating the surface of the substrate to modify the underlying hydroxy-terminated silicon (Si—OH) or hydrogen-terminated silicon (Si—H) surface to oxynitride-terminated silicon (Si—ON) or nitride-terminated silicon (Si—N) and enhance the subsequent a-Si deposition are provided. First, a substrate having features formed in a first surface of the substrate is provided. The surface of the substrate is then pretreated to enhance the surface of the substrate for the flowable deposition of amorphous silicon that follows. A flowable deposition process is then performed to deposit a flowable silicon layer over the surface of the substrate. Methods described herein generally improve overall etch selectivity by the conformal silicon deposition and the flowable silicon deposition process to realize seam-free gapfilling between features with high quality amorphous silicon film.

公开(公告)号：US20180040473A1

公开(公告)日：2018-02-08

申请号：US15784834

申请日：2017-10-16

Applicant: Applied Materials, Inc.

Inventor： Brian Saxton UNDERWOOD ,  Abhijit Basu MALLICK ,  Mukund SRINIVASAN ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01L21/02 ,  C23C16/48 ,  C23C16/56 ,  H01L21/324 ,  C23C16/40

CPC classification number: H01L21/0262 ,  C23C16/401 ,  C23C16/482 ,  C23C16/54 ,  C23C16/56 ,  H01J11/36 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02664 ,  H01L21/324

Abstract: A method and apparatus for forming a flowable film are described. The method includes providing an oxygen free precursor gas mixture to a processing chamber containing a substrate. The oxygen free precursor gas is activated by exposure to UV radiation in the processing chamber. Molecular fragments resulting from the UV activation are encouraged to deposit on the substrate to form a flowable film on the substrate. The substrate may be cooled to encourage deposition. The film may be hardened by heating and/or by further exposure to UV radiation.

公开(公告)号：US20170323777A1

公开(公告)日：2017-11-09

申请号：US15656045

申请日：2017-07-21

Applicant: Applied Materials, Inc.

Inventor： Yihong CHEN ,  Kelvin CHAN ,  Shaunak MUKHERJEE ,  Abhijit Basu MALLICK

IPC: H01L21/02 ,  C23C16/455 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/033 ,  H01L23/532

CPC classification number: H01L21/0228 ,  C23C16/45525 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02307 ,  H01L21/02312 ,  H01L21/02315 ,  H01L21/0337 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76834 ,  H01L23/53228

Abstract: Implementations disclosed herein generally relate to methods of forming silicon oxide films. The methods can include performing silylation on the surface of the substrate having terminal hydroxyl groups. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma and H2O soak in order to perform an additional silylation. Further methods include catalyzing the exposed surfaces using a Lewis acid, directionally inactivating the exposed first and second surfaces and deposition of a silicon containing layer on the sidewall surfaces. Multiple plasma treatments may be performed to deposit a layer having a desired thickness.

公开(公告)号：US20170110321A1

公开(公告)日：2017-04-20

申请号：US14961920

申请日：2015-12-08

Applicant: Applied Materials, Inc.

Inventor： Rui CHENG ,  Abhijit Basu MALLICK ,  Srinivas GANDIKOTA ,  Pramit MANNA

IPC: H01L21/225 ,  H01L29/167 ,  H01L21/02 ,  H01L29/66 ,  H01L21/324

CPC classification number: H01L21/2254 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/324 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/66803

Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In one embodiment, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film may include boron, phosphorous, and other suitable dopants. The film may be subsequently annealed to diffuse the dopants into the 3D structures.