公开(公告)号：US4742408A

公开(公告)日：1988-05-03

申请号：US870020

申请日：1986-06-03

申请人： Takeshi Kumagai

发明人： Takeshi Kumagai

IPC分类号： G11B17/028 ,  G11B5/012

CPC分类号： G11B17/0282

摘要： A floppy disk drive including a disk drive motor having an output shaft, a turntable secured to the output shaft of the motor and having a hole, a spring member attached to the bottom of the turntable, and a disk drive pin provided on the spring member for transmitting the rotation of the motor to a floppy disk on the turntable and having an upper end projecting above the top of the turntable through its hole for engaging the floppy disk. The spring member has a portion to which the drive pin is attached, and which allows the drive pin to incline both radially and circumferentially of a hub on the floppy disk when the hub acts on the drive pin.

摘要翻译： 一种软盘驱动器，包括具有输出轴的盘驱动马达，固定在马达的输出轴上并具有孔的转台，附接到转盘底部的弹簧件，以及设置在弹簧件上的盘驱动销 用于将电动机的旋转传递到转盘上的软盘，并且其上端通过其孔用于接合软盘而突出在转盘的顶部上方。 弹簧构件具有驱动销附接的部分，并且当毂作用在驱动销上时，允许驱动销在软盘上的轮毂的径向和周向两侧倾斜。

公开(公告)号：US08906246B2

公开(公告)日：2014-12-09

申请号：US13430871

申请日：2012-03-27

申请人： Hitoshi Kato ,  Takeshi Kumagai

发明人： Hitoshi Kato ,  Takeshi Kumagai

IPC分类号： C23C16/56 ,  H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/0234

摘要： A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.

摘要翻译： 膜沉积方法包括以下步骤：将具有凹部的图案的基板转印到真空室中; 从第一反应气体供给部向基板供给第一反应气体，由此使第一反应气体吸附在基板上; 从第二反应气体供给部分向基板供给与第一反应气体反应的第二反应气体，从而使吸附在基板上的第一反应气体与第二反应气体反应，形成第一反应气体的反应产物 基板上的第二反应气体; 通过能够激活所述改变气体的活化气体供给部件向所述基板供给改变气体; 以及在没有形成反应产物的环境下通过活性气体供给部分向基材室供给蚀刻气体。

公开(公告)号：US08642487B2

公开(公告)日：2014-02-04

申请号：US13471587

申请日：2012-05-15

申请人： Hitoshi Kato ,  Shigehiro Ushikubo ,  Tatsuya Tamura ,  Shigenori Ozaki ,  Takeshi Kumagai ,  Hiroyuki Kikuchi

发明人： Hitoshi Kato ,  Shigehiro Ushikubo ,  Tatsuya Tamura ,  Shigenori Ozaki ,  Takeshi Kumagai ,  Hiroyuki Kikuchi

IPC分类号： H01L21/31

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/4554 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32715 ,  H01J37/32733 ,  H01J37/32779 ,  H01L21/02164 ,  H01L21/0228

摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.

摘要翻译： 一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到 反应产物。

公开(公告)号：US20120267341A1

公开(公告)日：2012-10-25

申请号：US13430871

申请日：2012-03-27

申请人： Hitoshi KATO ,  Takeshi Kumagai

发明人： Hitoshi KATO ,  Takeshi Kumagai

IPC分类号： C23C16/56

CPC分类号： H01L21/0228 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45534 ,  C23C16/4554 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/0234

摘要： A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.

摘要翻译： 膜沉积方法包括以下步骤：将具有凹部的图案的基板转印到真空室中; 从第一反应气体供给部向基板供给第一反应气体，由此使第一反应气体吸附在基板上; 从第二反应气体供给部分向基板供给与第一反应气体反应的第二反应气体，从而使吸附在基板上的第一反应气体与第二反应气体反应，形成第一反应气体的反应产物 基板上的第二反应气体; 通过能够激活所述改变气体的活化气体供给部件向所述基板供给改变气体; 以及在没有形成反应产物的环境下通过活性气体供给部分向基材室供给蚀刻气体。

公开(公告)号：US08254252B2

公开(公告)日：2012-08-28

申请号：US12625595

申请日：2009-11-25

申请人： Hideki Hinosugi ,  Atsushi Anzai ,  Takeshi Kumagai

发明人： Hideki Hinosugi ,  Atsushi Anzai ,  Takeshi Kumagai

IPC分类号： H04L12/26

CPC分类号： H04L47/10 ,  H04L47/20 ,  H04L47/2475 ,  H04L47/28 ,  H04L47/32

摘要： A bandwidth calculation section calculates a usable bandwidth from a communication amount of each user or a session connection time stored in a statistic management memory and minimum bandwidth information and maximum bandwidth information recorded in a bandwidth setting memory. The bandwidth calculation section allocates a large usable bandwidth to a user with a small communication amount or a short session connection time. A transmission control section performs transmission scheduling of packet information stored in a packet buffer based on a transmission scheduled time calculated from the usable bandwidth stored in a transmission scheduled time memory.

摘要翻译： 带宽计算部分根据存储在统计管理存储器中的每个用户的通信量或会话连接时间来计算可用带宽，以及记录在带宽设置存储器中的最小带宽信息和最大带宽信息。 带宽计算部分向具有小通信量或短会话连接时间的用户分配大的可用带宽。 传输控制部分根据从发送调度时间存储器中存储的可用带宽计算的传输调度时间，对存储在分组缓冲器中的分组信息执行传输调度。

公开(公告)号：US20120052693A1

公开(公告)日：2012-03-01

申请号：US13216350

申请日：2011-08-24

申请人： Shigenori OZAKI ,  Hitoshi Kato ,  Takeshi Kumagai

发明人： Shigenori OZAKI ,  Hitoshi Kato ,  Takeshi Kumagai

IPC分类号： H01L21/31 ,  H01L21/318 ,  H01L21/316 ,  B05C11/00 ,  B05C11/10

CPC分类号： C23C16/45548 ,  C23C16/402 ,  C23C16/45536

摘要： When alternately performing a film deposition step where a silicon-containing gas and O3 gas are alternately supplied to a substrate on a susceptor by rotating the susceptor thereby to forma thin film of the reaction product, and an alteration step where the reaction product is altered by irradiating plasma to the substrate, plasma intensity of the plasma is changed during film deposition. Specifically, the plasma intensity is lower when a thickness of the thin film is small (or at an initial stage of the film deposition—alteration step), and is increased as the thin film becomes thicker (or as the number of the film deposition steps is increased). Alternatively, the plasma intensity is higher when the thin film is relatively thin and then reduced.

摘要翻译： 当交替地进行薄膜沉积步骤，其中通过旋转基座将含硅气体和O 3气体交替地供应到基座上的基板，从而形成反应产物的薄膜，以及反应产物被改变的改变步骤 将等离子体照射到基板上，在膜沉积期间等离子体的等离子体强度发生变化。 具体地说，当薄膜的厚度小（或在薄膜沉积 - 改变步骤的初始阶段）时，等离子体强度较低，并且随着薄膜变厚而增加（或者作为薄膜沉积步骤的数量） 增加）。 或者，当薄膜相对较薄然后减小时，等离子体强度较高。

公开(公告)号：US20110104395A1

公开(公告)日：2011-05-05

申请号：US12912910

申请日：2010-10-27

申请人： Takeshi KUMAGAI ,  Yasushi Takeuchi ,  Hitoshi Kato

发明人： Takeshi KUMAGAI ,  Yasushi Takeuchi ,  Hitoshi Kato

IPC分类号： C23C16/46 ,  C23C16/44 ,  B05D3/00

CPC分类号： C23C16/402 ,  C23C16/4401 ,  C23C16/45551 ,  C23C16/46

摘要： In a film deposition apparatus where bis (tertiary-butylamino) silane (BTBAS) gas is adsorbed on a wafer and then O3 gas is adsorbed on the wafer so that the BTBAS gas is oxidized by the O3 gas thereby depositing a silicon oxide film by rotating a turntable on which the wafer is placed, a laser beam irradiation portion is provided that is capable of irradiating a laser beam to an area spanning from one edge to another edge of a substrate receiving area of the turntable along a direction from an inner side to an outer side of the table.

摘要翻译： 在其中双（叔丁基氨基）硅烷（BTBAS））气体吸附在晶片上，然后O 3气体被吸附在晶片上的成膜装置中，使得BTBAS气体被O 3气体氧化，从而通过旋转沉积氧化硅膜 设置有晶片的转盘，设置有激光束照射部，该激光束照射部能够将激光照射到从转盘的基板接收区域的一边缘到另一边缘的区域，该区域沿着从内侧到 桌子的外侧。

公开(公告)号：US20110063978A1

公开(公告)日：2011-03-17

申请号：US12947182

申请日：2010-11-16

申请人： Hideki HINOSUGI ,  Yoshihiko SAKATA ,  Atsushi ANZAI ,  Takeshi KUMAGAI ,  Shinsuke NAKASHIMA

发明人： Hideki HINOSUGI ,  Yoshihiko SAKATA ,  Atsushi ANZAI ,  Takeshi KUMAGAI ,  Shinsuke NAKASHIMA

IPC分类号： H04L12/26

CPC分类号： H04L47/2441 ,  H04L47/2475 ,  H04L47/50 ,  H04L47/522 ,  H04L47/627 ,  H04L49/254 ,  H04L49/602

摘要： A packet relay device comprises a distribution processing unit classifying traffics into groups and users based on header information of packets received; a calculation unit calculating available frame rate of each user from peak frame rate, minimum frame rate, and weight information set for each user; a scheduling control unit updating a transmission schedule point-in-time calculated based on the available frame rate of each user, and judging which packet should be transmitted in accordance with the transmission schedule point-in-time updated; and a shaping unit updating a transmission schedule point-in-time calculated based on the peak frame rate of each user, and performing a shaping of packets at the peak frame rate on each user basis in accordance with the transmission schedule point-in-time updated; and a priority-control processing unit performing a strict priority control over transmission of packets of each group in correspondence with degree of priority of each group.

摘要翻译： 分组中继装置包括：分发处理单元，基于接收到的分组的报头信息，将流量分组到组和用户; 计算单元，从针对每个用户的峰值帧速率，最小帧速率和权重信息计算每个用户的可用帧速率; 调度控制单元基于每个用户的可用帧速率来更新计算出的发送调度时间点，并且根据传输调度来更新哪个分组应该被发送; 以及整形单元，其更新基于每个用户的峰值帧速率计算出的传输调度时间点，并且根据传输调度时间点对每个用户基于峰值帧速率对分组进行整形 更新; 以及优先级控制处理单元，对与各组的优先级相对应地对每组的分组的发送执行严格的优先级控制。

公开(公告)号：US20050095770A1

公开(公告)日：2005-05-05

申请号：US10500150

申请日：2003-01-14

申请人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

发明人： Takeshi Kumagai ,  Hitoshi Katoh ,  Jinsu Lee ,  Shingo Maku

IPC分类号： C23C16/30 ,  C23C16/34 ,  C23C16/40 ,  C23C16/452 ,  H01L21/8238

CPC分类号： C23C16/45561 ,  C23C16/308 ,  C23C16/345 ,  C23C16/40 ,  C23C16/401 ,  C23C16/452

摘要： A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.

摘要翻译： CVD装置（2）形成作为氧化硅膜，氮化硅膜或氮氧化硅膜的绝缘膜。 CVD装置包括：容纳目标基板（W）的处理室（8）;将处理室中的目标基板支撑的支撑构件（20）;加热器（12），用于加热由支撑构件支撑的目标基板 ，用于对处理室进行真空排气的排气部（39），以及向处理室供给气体的供给部（40）。 供给部包括供给硅烷族气体的第一气体的第一回路（42），供给作为氧化气体的第二气体的第二回路（44），氮化气体或氮氧化气体，以及第三回路 （46）供应碳氢化合物气体的第三气体，并且可以将第一，第二和第三气体供应在一起。