发明申请
US20110104395A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND STORAGE MEDIUM
审中-公开
薄膜沉积装置，薄膜沉积方法和储存介质
- 专利标题： FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND STORAGE MEDIUM
- 专利标题（中）： 薄膜沉积装置，薄膜沉积方法和储存介质
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申请号： US12912910申请日： 2010-10-27
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公开(公告)号： US20110104395A1公开(公告)日： 2011-05-05
- 发明人: Takeshi KUMAGAI , Yasushi Takeuchi , Hitoshi Kato
- 申请人： Takeshi KUMAGAI , Yasushi Takeuchi , Hitoshi Kato
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2009-252375 20091102
- 主分类号： C23C16/46
- IPC分类号： C23C16/46 ; C23C16/44 ; B05D3/00
摘要：
In a film deposition apparatus where bis (tertiary-butylamino) silane (BTBAS) gas is adsorbed on a wafer and then O3 gas is adsorbed on the wafer so that the BTBAS gas is oxidized by the O3 gas thereby depositing a silicon oxide film by rotating a turntable on which the wafer is placed, a laser beam irradiation portion is provided that is capable of irradiating a laser beam to an area spanning from one edge to another edge of a substrate receiving area of the turntable along a direction from an inner side to an outer side of the table.
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