摘要:
A semiconductor device includes a semiconductor die having contact pads disposed over a surface of the semiconductor die, a die attach adhesive layer disposed under the semiconductor die, and an encapsulant material disposed around and over the semiconductor die. The semiconductor device further includes bumps disposed in the encapsulant material around a perimeter of the semiconductor die. The bumps are partially enclosed by the encapsulant material. The semiconductor device further comprises first vias disposed in the encapsulant. The first vias expose surfaces of the contact pads. The semiconductor device further includes a first redistribution layer (RDL) disposed over the encapsulant and in the first vias, and a second RDL disposed under the encapsulant material and the die attach adhesive layer. The first RDL electrically connects each contact pad of the semiconductor die to one of the bumps, and the second RDL is electrically connected to one of the bumps.
摘要:
An integrated circuit package system includes: providing a die attach paddle with interconnection pads connected to a bottom surface of the die attach paddle; connecting a first device to the interconnection pads with a bond wire; connecting a lead to the interconnection pad or to the first device; encapsulating the first device and the die attach paddle with an encapsulation having a top surface; and etching the die attach paddle leaving a recess in the top surface of the encapsulation.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a lead; mounting an inner package so that the lead is peripheral to the inner package, and the inner package having a connection pad; forming an exposed terminal interconnect on the connection pad; and encapsulating the inner package, and partially encapsulating the exposed terminal interconnect with an encapsulation.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing a first device having a first exposed side and a first inward side; connecting a second device having a second exposed side and a second inward side facing the first inward side to the first device, the second device having planar dimensions less than planar dimensions of the first device; connecting a system connector to a perimeter of the first inward side, the system connector having an exposed leg partially vertical and an exposed foot partially horizontal; and applying an encapsulant exposing the first exposed side, the second exposed side, the exposed leg, and the exposed foot, the exposed leg offset from the encapsulant, the exposed foot on an end of the system connector opposite the first device.
摘要:
A semiconductor device includes a carrier and semiconductor die having an optically active region. The semiconductor die is mounted to the carrier to form a separation between the carrier and the semiconductor die. The semiconductor device further includes a passivation layer disposed over a surface of the semiconductor die and a glass layer disposed over a surface of the passivation layer. The passivation layer has a clear portion for passage of light to the optically active region of the semiconductor die. The semiconductor device further includes an encapsulant disposed over the carrier within the separation to form an expansion region around a periphery of the semiconductor die, a first via penetrating the expansion region, glass layer, and passivation layer, a second via penetrating the glass layer and passivation layer to expose a contact pad on the semiconductor die, and a conductive material filling the first and second vias.
摘要:
A semiconductor device is made by providing a metal substrate for supporting the semiconductor device. Solder bumps are connected to the substrate. In one embodiment, a conductive material is deposited over the substrate and is reflowed to form the solder bumps. A semiconductor die is mounted to the substrate using a die attach adhesive. The semiconductor die has a plurality of contact pads formed over a surface of the semiconductor die. An encapsulant material is deposited over the solder bumps and the semiconductor die. The encapsulant is etched to expose the contact pads of the semiconductor die. A first redistribution layer (RDL) is formed over the encapsulant to connect each contact pad of the semiconductor die to one of the solder bumps. The substrate is removed to expose the die attach adhesive and a bottom surface of the solder bumps.
摘要:
A method of manufacture of an integrated circuit packaging system includes: providing inwardly converging leadfingers having continuously decreasing widths along lengths thereof to inward ends thereof; electrically connecting an integrated circuit device on the leadfingers only on portions of the continuously decreasing widths; and encapsulating the integrated circuit device and the leadfingers with an encapsulation.
摘要:
A semiconductor package has a semiconductor die with an optically active region which converts light to an electrical signal. An expansion region is formed around the semiconductor die. A through hole via (THV) is formed in the expansion region. Conductive material is deposited in the THV. A passivation layer is formed over the semiconductor die. The passivation layer allows for passage of light to the optically active region of the semiconductor die. A glass layer is applied to the passivation layer. A first RDL is electrically connected between the THV and a contact pad of the semiconductor die. Additional RDLs are formed on a front and back side of the semiconductor die. An under bump metallization (UBM) layer is formed over and electrically connected to the intermediate conduction layer. Solder material is deposited on the UBM and reflowed to form a solder bump.
摘要:
A semiconductor wafer contains a plurality of semiconductor die. The semiconductor wafer is diced to separate the semiconductor die. The semiconductor die are transferred onto a carrier. A die extension region is formed around a periphery of the semiconductor die on the carrier. The carrier is removed. A plurality of through hole vias (THV) is formed in first and second offset rows in the die extension region. A conductive material is deposited in the THVs. A first RDL is formed between contact pads on the semiconductor die and the THVs. A second RDL is formed on a backside of the semiconductor die in electrical contact with the THVs. An under bump metallization is formed in electrical contact with the second RDL. Solder bumps are formed on the under bump metallization. The die extension region is singulated to separate the semiconductor die.
摘要:
A multi-chip package system is provided including providing a first carrier having a first integrated circuit die thereover, providing a second carrier, placing the first carrier coplanar with the second carrier, and molding a package encapsulation around and exposing the first carrier.