公开(公告)号：US07435972B2

公开(公告)日：2008-10-14

申请号：US11714235

申请日：2007-03-06

申请人： Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

发明人： Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

IPC分类号： H01J49/00 ,  H01J27/00 ,  G21K5/10

CPC分类号： H01J37/09 ,  H01J2237/022 ,  H01J2237/0805 ,  H01J2237/3109

摘要： In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

摘要翻译： 在用于其表面涂覆有液态金属的离子束光学系统的孔中，防止归因于溅射的离子源的不稳定性和孔基材的再沉积。 使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。 孔具有形成有凹槽的容器，凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属，液态金属用于液体金属离子源。 优选地，孔径可以在孔径入口孔内表面的面积中最小化，孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

公开(公告)号：US20080067385A1

公开(公告)日：2008-03-20

申请号：US11980654

申请日：2007-10-31

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： G21K5/08 ,  G01N23/225

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US07268356B2

公开(公告)日：2007-09-11

申请号：US10898592

申请日：2004-07-26

申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

IPC分类号： G21G5/00

CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

公开(公告)号：US07242015B2

公开(公告)日：2007-07-10

申请号：US11234197

申请日：2005-09-26

申请人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

发明人： Hiroyuki Shinada ,  Yusuke Yajima ,  Hisaya Murakoshi ,  Masaki Hasegawa ,  Mari Nozoe ,  Atsuko Takafuji ,  Katsuya Sugiyama ,  Katsuhiro Kuroda ,  Kaoru Umemura ,  Yasutsugu Usami

IPC分类号： H01J37/153 ,  H01J37/30

CPC分类号： H01J37/26 ,  G01N23/225 ,  H01J37/244 ,  H01J37/29 ,  H01J2237/20228 ,  H01J2237/221 ,  H01J2237/2447 ,  H01J2237/24475 ,  H01J2237/24485 ,  H01J2237/24592 ,  H01J2237/2482

摘要： An electron beam (area beam) having a fixed area is irradiated onto the surface of a semiconductor sample, and reflected electrons from the sample surface are imaged by the imaging lens, and images of a plurality of regions of the surface of the semiconductor sample are obtained and stored in the image storage unit, and the stored images of the plurality of regions are compared with each other, and the existence of a defect in the regions and the defect position are measured. By doing this, in an apparatus for testing a pattern defect of the same design, foreign substances, and residuals on a wafer in the manufacturing process of a semiconductor apparatus by an electron beam, speeding-up of the test can be realized.

摘要翻译： 具有固定面积的电子束（区域光束）被照射到半导体样品的表面上，并且通过成像透镜对来自样品表面的反射电子进行成像，并且半导体样品的表面的多个区域的图像是 获取并存储在图像存储单元中，并且将多个区域的存储图像相互比较，并且测量区域和缺陷位置中的缺陷的存在。 通过这样做，在通过电子束在半导体装置的制造过程中测试相同设计的模式缺陷，异物和晶片上的残留物的装置可以实现测试的加速。

公开(公告)号：US07205560B2

公开(公告)日：2007-04-17

申请号：US11127240

申请日：2005-05-12

申请人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

发明人： Mitsuo Tokuda ,  Muneyuki Fukuda ,  Yasuhiro Mitsui ,  Hidemi Koike ,  Satoshi Tomimatsu ,  Hiroyasu Shichi ,  Hideo Kashima ,  Kaoru Umemura

IPC分类号： H01J37/256 ,  G21K7/00

CPC分类号： H04L29/06 ,  G01N23/225 ,  H01J37/256 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/202 ,  H01J2237/31745 ,  H04L67/16 ,  H04L69/329

摘要： An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.

公开(公告)号：US07189982B2

公开(公告)日：2007-03-13

申请号：US11205086

申请日：2005-08-17

申请人： Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

发明人： Yuichi Madokoro ,  Shigeru Izawa ,  Kaoru Umemura ,  Hiroyasu Kaga

IPC分类号： H01J37/08

CPC分类号： H01J37/09 ,  H01J2237/022 ,  H01J2237/0805 ,  H01J2237/3109

摘要： In an aperture for use in an ion beam optical system having its surface coated with a liquid metal, instability of an ion source attributable to sputtering and re-deposition of an aperture base material is prevented. A focused ion beam apparatus using a liquid metal ion source has an aperture for limiting an ion beam diameter. The aperture has a vessel formed with a recess having, at its surface lowermost point, an aperture hole through which the ion beam passes and a liquid metal mounted on the recess, the liquid metal being used for the liquid metal ion source. Preferably, the aperture may be minimized in area of aperture entrance hole inner surface which exposes the base material by tapering an aperture hole portion, by which the ion beam passes, on the downstream side.

摘要翻译： 在用于其表面涂覆有液态金属的离子束光学系统的孔中，防止归因于溅射的离子源的不稳定性和孔基材的再沉积。 使用液体金属离子源的聚焦离子束装置具有用于限制离子束直径的孔。 孔具有形成有凹槽的容器，凹槽在其表面的最低点处具有离子束通过的孔眼和安装在凹部上的液态金属，液态金属用于液体金属离子源。 优选地，孔径可以在孔径入口孔内表面的面积中最小化，孔面内表面通过使下游侧的离子束通过的孔眼部分变细而露出基底材料。

公开(公告)号：US07071475B2

公开(公告)日：2006-07-04

申请号：US10941913

申请日：2004-09-16

申请人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

发明人： Satoshi Tomimatsu ,  Kaoru Umemura ,  Yuichi Madokoro ,  Yoshimi Kawanami ,  Yasunori Doi

IPC分类号： H01J37/20

CPC分类号： G01N1/32 ,  G01N1/28 ,  G01N2001/028 ,  G01N2001/045 ,  G01N2001/282 ,  H01J37/20 ,  H01J37/302 ,  H01J37/3056 ,  H01J2237/2007 ,  H01J2237/201 ,  H01J2237/202 ,  H01J2237/31732 ,  H01J2237/31745 ,  H01J2237/31749

摘要： A specimen fabrication apparatus including a movable sample stage on which a specimen substrate is mounted, a probe connector for firmly joining a tip of a probe to a portion of the specimen substrate in a vicinity of an area on the specimen substrate to be observed in an observation apparatus, a micro-specimen separator for separating from the specimen substrate a micro-specimen to which the tip of the probe is firmly joined, the micro-specimen including the area on the specimen substrate to be observed and the portion of the specimen substrate to which the tip of the probe is firmly joined, a micro-specimen fixer for fixing the micro-specimen separated from the specimen substrate to a specimen holder of the observation apparatus, and a probe separator for separating the tip of the probe from the micro-specimen fixed to the specimen holder.

公开(公告)号：US20060097186A1

公开(公告)日：2006-05-11

申请号：US11312367

申请日：2005-12-21

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： H01J27/00

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US07005651B2

公开(公告)日：2006-02-28

申请号：US11004903

申请日：2004-12-07

申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

IPC分类号： G21G5/00 ,  H01J27/00

CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的粒子成为Ga液态金属离子源的元素（W和Ga），如果反溅射的粒子附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

公开(公告)号：US06937408B2

公开(公告)日：2005-08-30

申请号：US10085804

申请日：2002-02-27

申请人： Ryoheita Hattori ,  Naoyuki Kagami ,  Tetesuya Kokubo ,  Nobuya Matsubara ,  Kaoru Umemura

发明人： Ryoheita Hattori ,  Naoyuki Kagami ,  Tetesuya Kokubo ,  Nobuya Matsubara ,  Kaoru Umemura

IPC分类号： G11B21/10 ,  G11B19/04 ,  G11B20/18 ,  G11B27/36 ,  G11B33/10

CPC分类号： G11B19/04 ,  G11B20/1816 ,  G11B20/182 ,  G11B27/36 ,  G11B33/10

摘要： In addition to the conventional test pattern writing in a center of each track and inspection of burst patterns (A and B patterns) through a writing test in a SAT, there is also performed a test pattern data writing test, which is done at each boundary between tracks. With this additional test, it is possible to accurately inspect both C and D burst patterns that are sensitive to a PES signal at each boundary between tracks.

摘要翻译： 除了通过SAT中的写入测试的常规测试图案写入每个轨道的中心以及对脉冲串模式（A和B图案）进行检查之外，还执行在每个边界处进行的测试图案数据写入测试 轨道之间。 通过这个附加测试，可以准确地检查在轨道之间的每个边界处对PES信号敏感的C和D脉冲串图形。