公开(公告)号：US20120124120A1

公开(公告)日：2012-05-17

申请号：US13349871

申请日：2012-01-13

Applicant: Hirofumi Morise ,  Shiho Nakamura ,  Daisuke Saida ,  Tsuyoshi Kondo

Inventor： Hirofumi Morise ,  Shiho Nakamura ,  Daisuke Saida ,  Tsuyoshi Kondo

IPC: G06F7/50

CPC classification number: G06F7/388

Abstract: According to an embodiment, an adder includes first and second wave computing units and a threshold wave computing unit. Each of the first and second wave computing units includes a pair of first input sections, a first wave transmission medium having a continuous film including a magnetic body connected to the first input sections, and a first wave detector outputting a result of computation by spin waves induced in the first wave transmission medium by the signals corresponding to the two bit values. The threshold wave computing unit includes a plurality of third input sections, a third wave transmission medium having a continuous film including a magnetic body connected to the third input sections, and a third wave detector a result of computation by spin waves induced in the third wave transmission medium.

Abstract translation: 根据实施例，加法器包括第一和第二波计算单元和阈值波计算单元。 第一和第二波形计算单元中的每一个包括一对第一输入部分，具有包括连接到第一输入部分的磁体的连续膜的第一波传播介质和输出通过自旋波的计算结果的第一波检测器 在第一波传输介质中通过对应于两位值的信号感应。 阈值波计算单元包括多个第三输入部分，具有包括连接到第三输入部分的磁体的连续胶片的第三波传播介质，以及第三波检测器，由第三波中感应的自旋波的计算结果 传输介质。

公开(公告)号：US20120068281A1

公开(公告)日：2012-03-22

申请号：US13037592

申请日：2011-03-01

Applicant: DAISUKE SAIDA ,  MINORU AMANO ,  JUNICHI ITO ,  YUICHI OHSAWA ,  SAORI KASHIWADA ,  CHIKAYOSHI KAMATA ,  SHIGEKI TAKAHASHI

Inventor： DAISUKE SAIDA ,  MINORU AMANO ,  JUNICHI ITO ,  YUICHI OHSAWA ,  SAORI KASHIWADA ,  CHIKAYOSHI KAMATA ,  SHIGEKI TAKAHASHI

IPC: H01L29/82

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228

Abstract: According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.

Abstract translation: 根据一个实施例，磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。 第一堆叠单元包括第一铁磁层，第二铁磁层和第一非磁性层。 第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。 第二堆叠单元包括第三铁磁层，第四铁磁层和第二非磁性层。 第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。 第一方向与第二方向相反。

公开(公告)号：US20090207724A1

公开(公告)日：2009-08-20

申请号：US12320955

申请日：2009-02-10

Applicant: Satoshi Yanagi ,  Yuichi Ohsawa ,  Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise

Inventor： Satoshi Yanagi ,  Yuichi Ohsawa ,  Shiho Nakamura ,  Daisuke Saida ,  Hirofumi Morise

IPC: G11B3/70

CPC classification number: G11B25/04 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675

Abstract: A magnetic memory is provided with a memory cell. The memory cell includes a magnetic recording element, an interconnection to generate a radio-frequency current-induced magnetic field and a ground line. The magnetic recording element is provided with a first magnetic layer whose magnetization direction is substantially fixed, a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer and a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer. The interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer. The ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.

Abstract translation: 磁存储器设置有存储单元。 存储单元包括磁记录元件，用于产生射频电流感应磁场和接地线的互连。 磁记录元件设置有其磁化方向基本上固定的第一磁性层，其磁化方向基本上由通过磁记录层的自旋极化电子反转的磁记录层和设置在第一磁性层之间的第一非磁性层 和磁记录层。 互连设置在磁记录元件的上方，以产生沿与磁记录层的易磁化轴基本垂直的方向作用的射频电流感应磁场。 接地线相对于互连设置在与磁记录元件相对的一侧上。

公开(公告)号：US20090098412A1

公开(公告)日：2009-04-16

申请号：US12285429

申请日：2008-10-03

Applicant: Yuichi Ohsawa ,  Shiho Nakamura ,  Hirofumi Morise ,  Satoshi Yanagi ,  Daisuke Saida

Inventor： Yuichi Ohsawa ,  Shiho Nakamura ,  Hirofumi Morise ,  Satoshi Yanagi ,  Daisuke Saida

IPC: G11B5/33

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  Y10T428/11 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115

Abstract: A magnetic recording element includes a multilayer having a surface and a pair of electrodes. The multilayer has a first magnetic fixed layer whose magnetization is substantially fixed in a first direction substantially perpendicular to the surface. The multilayer also has a second magnetic fixed layer whose magnetization is substantially fixed in a second direction opposite to the first direction substantially perpendicular to the surface. A third magnetic layer is provided between the first and second magnetic layers. The direction of magnetization of the third ferromagnetic layer is variable. A first intermediate layer is provided between the first and the third magnetic layers. A second intermediate layer is provided between the second and the third magnetic layers. The pair of electrodes is capable of supplying an electric current flowing in a direction substantially perpendicular to the surface to the multilayer. The sectional area taken parallel to the surface at a thickness midpoint of the first magnetic layer is larger than that of the second magnetic layer.

Abstract translation: 磁记录元件包括具有表面和一对电极的多层。 多层具有第一磁性固定层，其磁化基本上在基本垂直于表面的第一方向固定。 多层还具有第二磁性固定层，其磁化基本上固定在与基本上垂直于表面的第一方向相反的第二方向上。 第三磁性层设置在第一和第二磁性层之间。 第三铁磁层的磁化方向是可变的。 第一中间层设置在第一和第三磁性层之间。 第二中间层设置在第二和第三磁性层之间。 该对电极能够将与表面大致垂直的方向流动的电流供给到多层。 在第一磁性层的厚度中点平行于表面截取的截面积大于第二磁性层的截面面积。

公开(公告)号：US08611142B2

公开(公告)日：2013-12-17

申请号：US13299130

申请日：2011-11-17

Applicant: Shiho Nakamura ,  Hirofumi Morise ,  Satoshi Yanagi ,  Daisuke Saida ,  Akira Kikitsu

Inventor： Shiho Nakamura ,  Hirofumi Morise ,  Satoshi Yanagi ,  Daisuke Saida ,  Akira Kikitsu

IPC: G11C11/15 ,  G11C11/16 ,  G11C11/14 ,  G11C11/02

CPC classification number: G11C11/22 ,  G11B5/66 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1675

Abstract: An example magnetic recording device includes a laminated body. The laminated body includes a first ferromagnetic layer with a magnetization substantially fixed in a first direction; a second ferromagnetic layer with a variable magnetization direction; a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer; a third ferromagnetic layer with a variable magnetization direction; and a fourth ferromagnetic layer with a magnetization substantially fixed in a second direction, wherein at least one of the first and second direction is generally perpendicular to the film plane. The magnetization direction of the second ferromagnetic layer is determinable in response to the orientation of a current, by passing the current in a direction generally perpendicular to the film plane of the layers of the laminated body and the magnetization of the third ferromagnetic layer is able to undergo precession by passing the current.

Abstract translation: 示例性磁记录装置包括层压体。 层叠体包括具有在第一方向上基本固定的磁化的第一铁磁层; 具有可变磁化方向的第二铁磁层; 设置在所述第一铁磁层和所述第二铁磁层之间的第一非磁性层; 具有可变磁化方向的第三铁磁层; 以及具有在第二方向上基本固定的磁化的第四铁磁层，其中所述第一和第二方向中的至少一个大致垂直于所述膜平面。 第二铁磁层的磁化方向可以通过使电流沿大致垂直于层叠体的层的膜平面的方向流过电流的方向来确定，并且第三铁磁层的磁化能够 通过传递目前进行进攻。

公开(公告)号：US08576616B2

公开(公告)日：2013-11-05

申请号：US13227959

申请日：2011-09-08

Applicant: Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Tadaomi Daibou

Inventor： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Tadaomi Daibou

IPC: G11C11/00

CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a magnetic element includes first and second conductive layers, an intermediate interconnection, and first and second stacked units. The intermediate interconnection is provided between the conductive layers. The first stacked unit is provided between the first conductive layer and the interconnection, and includes first and second ferromagnetic layer and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second stacked unit is provided between the second conductive layer and the interconnection, and includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a magnetic field to act on the second ferromagnetic layer.

Abstract translation: 根据一个实施例，磁性元件包括第一和第二导电层，中间互连以及第一和第二堆叠单元。 中间互连设置在导电层之间。 第一层叠单元设置在第一导电层和互连之间，并且包括第一和第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二堆叠单元设置在第二导电层和互连之间，并且包括第三和第四铁磁层以及设置在第三和第四铁磁层之间的第二非磁性层。 通过使自旋极化电子和磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

公开(公告)号：US20120236633A1

公开(公告)日：2012-09-20

申请号：US13228040

申请日：2011-09-08

Applicant: Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

Inventor： Daisuke SAIDA ,  Minoru AMANO ,  Junichi ITO ,  Yuichi OHSAWA ,  Saori KASHIWADA ,  Chikayoshi KAMATA ,  Tadaomi DAIBOU

IPC: G11C11/15 ,  G11B5/66

CPC classification number: G11B5/66 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

Abstract: According to one embodiment, a magnetic recording element includes a stacked body. The stacked body includes a first and a second stacked unit. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit is stacked with the first stacked unit and includes third and fourth ferromagnetic layers and a second nonmagnetic layer. The fourth ferromagnetic layer is stacked with the third ferromagnetic layer. The second nonmagnetic layer is provided between the third and fourth ferromagnetic layers. An outer edge of the fourth ferromagnetic layer includes a portion outside an outer edge of the first stacked unit in a plane. A magnetization direction of the second ferromagnetic layer is determined by causing a spin-polarized electron and a rotating magnetic field to act on the second ferromagnetic layer.

Abstract translation: 根据一个实施例，磁记录元件包括堆叠体。 堆叠体包括第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和第一非磁性层。 第一非磁性层设置在第一和第二铁磁层之间。 第二堆叠单元与第一堆叠单元堆叠并且包括第三和第四铁磁层和第二非磁性层。 第四铁磁层与第三铁磁层层叠。 第二非磁性层设置在第三和第四铁磁层之间。 第四铁磁层的外边缘包括平面内第一堆叠单元的外边缘外侧的部分。 通过使自旋极化电子和旋转磁场作用于第二铁磁层来确定第二铁磁层的磁化方向。

公开(公告)号：US09082961B2

公开(公告)日：2015-07-14

申请号：US13226960

申请日：2011-09-07

Applicant: Yuichi Ohsawa ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

Inventor： Yuichi Ohsawa ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

IPC: H01L43/12 ,  H01L29/82

CPC classification number: H01L43/12 ,  H01L29/82

Abstract: According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.

Abstract translation: 根据一个实施例，一种制造多层膜的方法，该方法包括：形成第一层，在第一层上形成第二层，以及将第一层和第二层之一的晶体信息转录到第一层中的另一层 并且通过对第二层执行GCIB照射来产生第二层。

公开(公告)号：US08745120B2

公开(公告)日：2014-06-03

申请号：US13349871

申请日：2012-01-13

Applicant: Hirofumi Morise ,  Shiho Nakamura ,  Daisuke Saida ,  Tsuyoshi Kondo

Inventor： Hirofumi Morise ,  Shiho Nakamura ,  Daisuke Saida ,  Tsuyoshi Kondo

IPC: G06F7/50

CPC classification number: G06F7/388

Abstract: According to an embodiment, an adder includes first and second wave computing units and a threshold wave computing unit. Each of the first and second wave computing units includes a pair of first input sections, a first wave transmission medium having a continuous film including a magnetic body connected to the first input sections, and a first wave detector outputting a result of computation by spin waves induced in the first wave transmission medium by the signals corresponding to the two bit values. The threshold wave computing unit includes a plurality of third input sections, a third wave transmission medium having a continuous film including a magnetic body connected to the third input sections, and a third wave detector a result of computation by spin waves induced in the third wave transmission medium.

Abstract translation: 根据实施例，加法器包括第一和第二波计算单元和阈值波计算单元。 第一和第二波形计算单元中的每一个包括一对第一输入部分，具有包括连接到第一输入部分的磁体的连续膜的第一波传播介质和输出通过自旋波的计算结果的第一波检测器 在第一波传输介质中通过对应于两位值的信号感应。 阈值波计算单元包括多个第三输入部分，具有包括连接到第三输入部分的磁体的连续胶片的第三波传播介质，以及第三波检测器，由第三波中感应的自旋波的计算结果 传输介质。

公开(公告)号：US08716817B2

公开(公告)日：2014-05-06

申请号：US13416724

申请日：2012-03-09

Applicant: Daisuke Saida ,  Minoru Amano ,  Yuichi Ohsawa ,  Junichi Ito ,  Hiroaki Yoda

Inventor： Daisuke Saida ,  Minoru Amano ,  Yuichi Ohsawa ,  Junichi Ito ,  Hiroaki Yoda

IPC: H01L29/82

CPC classification number: H01F10/3286 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3236 ,  H01F10/329 ,  H01L43/08

Abstract: According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.

Abstract translation: 根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。 第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。 第二和第三铁磁层的磁化是可变的。 第一和第四铁磁层的磁化在垂直于层表面的方向固定。 当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。