METHOD FOR MAKING SEMICONDUCTOR DEVICE
    28.
    发明公开

    公开(公告)号:US20230326769A1

    公开(公告)日:2023-10-12

    申请号:US18184670

    申请日:2023-03-16

    CPC classification number: H01L21/565 H01L25/50

    Abstract: A method for making a semiconductor device is provided. The method includes: providing a package including: a substrate including a top surface and a bottom surface; a top electronic component mounted on the top surface of the substrate; at least one conductive pillar formed on the bottom surface of the substrate; and a protection layer attached on the bottom surface of the substrate and covering the at least one conductive pillar; providing a molding apparatus including a top chase and a bottom chase, wherein a molding material is held in the bottom chase; attaching the protection layer onto the top chase of the molding apparatus; and moving the top chase and the bottom chase close to each other to compress the molding material to cover the top electronic component on the top surface of the substrate, thereby forming a top encapsulation on the top surface of the substrate.

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