Abstract:
The present disclosure provides a method and system for modifying a doped region design layout during mask preparation to tune device performance. An exemplary method includes receiving an integrated circuit design layout designed to define an integrated circuit, wherein the integrated circuit design layout includes a doped feature layout; identifying an area of the integrated circuit for device performance modification, and modifying a portion of the doped feature layout that corresponds with the identified area of the integrated circuit during a mask preparation process, thereby providing a modified doped feature layout.
Abstract:
An illumination device including a base, at least one LED light source and a first diffusing element is provided. The base has a supporting plane. The LED light source disposed on the supporting plane has a light emitting surface substantially parallel to the supporting plane. The first diffusing element disposed on the supporting plane is a hollow column surrounding the LED light source. An inner diameter width of the first diffusing element is gradually reduced outward from the base. The first diffusing element has a rough surface comprising a plurality of surface structures.
Abstract:
A lens structure, a light source device, and a light source module are provided. The light source device includes a light emitting device and a lens structure. The light emitting device is capable of emitting a light beam. The lens structure includes a first surface, a second surface opposite to the first surface and four total internal reflection surfaces connected to the second surface. Some of the total internal reflection surfaces connect to the first surface. The first surface has a recess. The light emitting device is disposed at the recess. The second surface is a free-form surface. The light beam is capable of entering the lens structure through the first surface, and leaving the lens structure through the second surface.
Abstract:
A method of manufacturing a semiconductor device is disclosed. The exemplary method includes providing a substrate having a source region and a drain region. The method further includes forming a first recess in the substrate within the source region and a second recess in the substrate within the drain region. The first recess has a first plurality of surfaces and the second recess has a second plurality of surfaces. The method also includes epi-growing a semiconductor material in the first and second recesses and, thereafter, forming shallow isolation (STI) features in the substrate.
Abstract:
A method of manufacturing a semiconductor device is disclosed. The exemplary method includes providing a substrate having a source region and a drain region. The method further includes forming a first recess in the substrate within the source region and a second recess in the substrate within the drain region. The first recess has a first plurality of surfaces and the second recess has a second plurality of surfaces. The method also includes epi-growing a semiconductor material in the first and second recesses and, thereafter, forming shallow isolation (STI) features in the substrate.
Abstract:
An antenna structure comprises a substrate having a first surface and a second surface, an array of conductor units positioned on the first surface and including at least two conductor units which are coupled, and at least one load metal sheet positioned on at least one of the first surface or the second surface. Each of the conductor units includes an intervening material with two conductors positioned on opposite surfaces of the intervening material.
Abstract:
A series of novel phosphorus-containing compounds having the following formula is provided: in which: R1-R4, A, Q and m are as defined in the specification. A process for the preparation of the compound of formula (I) is also provided. A polymer of formula (PA), and preparation process and use thereof are further provided. A polymer of formula (PI), and preparation process and use thereof are also provided.
Abstract:
The invention relates to a moisture-proof and insulating coating material comprising a block copolymer or hydrogenated copolymer thereof (A), an adhesive resin (B) and a solvent (C). The block copolymer or hydride (A) comprises at least two vinyl aromatic polymer blocks and at least one conjugated diene polymer block, and in the moisture-proof and insulating coating material, the content of residual vinyl aromatic monomer is less than 300 ppm, and the content of vinyl aromatic oligomer is less than 300 ppm. The moisture-proof and insulating coating material according to the invention has good reworkability. A moisture-proof and insulating film and a method for producing the same and an electrical component comprising the moisture-proof and insulating film and a method for producing the same are also provided in the invention.
Abstract:
A three-dimensional (3D) video processing device capable of avoiding crosstalk between adjacent frames includes a video processing circuit and a control circuit. The video processing circuit is configured to generate a 3D video signal having a first frame timing. The 3D video signal is used to control a panel to update, to thereby display 3D video frames in accordance with a second frame timing which is a delayed version of the first frame timing. The control circuit is utilized for generating a backlight control signal. A switching timing of the backlight control signal is determined according to the second frame timing.