Method and system for modifying doped region design layout during mask preparation to tune device performance
    211.
    发明授权
    Method and system for modifying doped region design layout during mask preparation to tune device performance 有权
    在掩模准备期间修改掺杂区域设计布局以调整器件性能的方法和系统

    公开(公告)号:US08527915B2

    公开(公告)日:2013-09-03

    申请号:US13286410

    申请日:2011-11-01

    CPC classification number: G06F17/5068 H01L21/26586 H01L29/6659

    Abstract: The present disclosure provides a method and system for modifying a doped region design layout during mask preparation to tune device performance. An exemplary method includes receiving an integrated circuit design layout designed to define an integrated circuit, wherein the integrated circuit design layout includes a doped feature layout; identifying an area of the integrated circuit for device performance modification, and modifying a portion of the doped feature layout that corresponds with the identified area of the integrated circuit during a mask preparation process, thereby providing a modified doped feature layout.

    Abstract translation: 本公开提供了一种用于在掩模准备期间修改掺杂区域设计布局以调谐设备性能的方法和系统。 一种示例性方法包括接收设计成定义集成电路的集成电路设计布局,其中集成电路设计布局包括掺杂特征布局; 识别用于器件性能修改的集成电路的区域,以及在掩模准备过程期间修改与所识别的集成电路的区域相对应的掺杂特征布局的一部分,从而提供修改的掺杂特征布局。

    ILLUMINATION DEVICE
    212.
    发明申请
    ILLUMINATION DEVICE 有权
    照明装置

    公开(公告)号:US20130208488A1

    公开(公告)日:2013-08-15

    申请号:US13610911

    申请日:2012-09-12

    Abstract: An illumination device including a base, at least one LED light source and a first diffusing element is provided. The base has a supporting plane. The LED light source disposed on the supporting plane has a light emitting surface substantially parallel to the supporting plane. The first diffusing element disposed on the supporting plane is a hollow column surrounding the LED light source. An inner diameter width of the first diffusing element is gradually reduced outward from the base. The first diffusing element has a rough surface comprising a plurality of surface structures.

    Abstract translation: 提供一种包括基底,至少一个LED光源和第一漫射元件的照明装置。 底座有支撑面。 设置在支撑平面上的LED光源具有基本上平行于支撑平面的发光表面。 设置在支撑平面上的第一扩散元件是围绕LED光源的中空柱。 第一漫射元件的内径宽度从底部向外逐渐减小。 第一扩散元件具有包括多个表面结构的粗糙表面。

    LENS STRUCTURE, LIGHT SOURCE DEVICE AND LIGHT SOURCE MODULE
    213.
    发明申请
    LENS STRUCTURE, LIGHT SOURCE DEVICE AND LIGHT SOURCE MODULE 有权
    镜头结构,光源设备和光源模块

    公开(公告)号:US20130176729A1

    公开(公告)日:2013-07-11

    申请号:US13733894

    申请日:2013-01-04

    Abstract: A lens structure, a light source device, and a light source module are provided. The light source device includes a light emitting device and a lens structure. The light emitting device is capable of emitting a light beam. The lens structure includes a first surface, a second surface opposite to the first surface and four total internal reflection surfaces connected to the second surface. Some of the total internal reflection surfaces connect to the first surface. The first surface has a recess. The light emitting device is disposed at the recess. The second surface is a free-form surface. The light beam is capable of entering the lens structure through the first surface, and leaving the lens structure through the second surface.

    Abstract translation: 提供了一种透镜结构,光源装置和光源模块。 光源装置包括发光装置和透镜结构。 发光装置能够发射光束。 透镜结构包括第一表面,与第一表面相对的第二表面和连接到第二表面的四个全内反射表面。 全部内反射面中的一些连接到第一表面。 第一表面有凹槽。 发光装置设置在凹部处。 第二个表面是自由曲面。 光束能够通过第一表面进入透镜结构,并且使透镜结构通过第二表面。

    Method of manufacturing a semiconductor device
    214.
    发明授权
    Method of manufacturing a semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08470660B2

    公开(公告)日:2013-06-25

    申请号:US13234296

    申请日:2011-09-16

    Abstract: A method of manufacturing a semiconductor device is disclosed. The exemplary method includes providing a substrate having a source region and a drain region. The method further includes forming a first recess in the substrate within the source region and a second recess in the substrate within the drain region. The first recess has a first plurality of surfaces and the second recess has a second plurality of surfaces. The method also includes epi-growing a semiconductor material in the first and second recesses and, thereafter, forming shallow isolation (STI) features in the substrate.

    Abstract translation: 公开了制造半导体器件的方法。 该示例性方法包括提供具有源极区和漏极区的衬底。 该方法还包括在源极区域内的衬底中形成第一凹槽,以及在漏极区域内的衬底中形成第二凹部。 第一凹部具有第一多个表面,第二凹部具有第二多个表面。 该方法还包括在第一和第二凹陷中外延生长半导体材料,然后在衬底中形成浅隔离(STI)特征。

    Method of Manufacturing a Semiconductor Device
    215.
    发明申请
    Method of Manufacturing a Semiconductor Device 有权
    制造半导体器件的方法

    公开(公告)号:US20130071995A1

    公开(公告)日:2013-03-21

    申请号:US13234296

    申请日:2011-09-16

    Abstract: A method of manufacturing a semiconductor device is disclosed. The exemplary method includes providing a substrate having a source region and a drain region. The method further includes forming a first recess in the substrate within the source region and a second recess in the substrate within the drain region. The first recess has a first plurality of surfaces and the second recess has a second plurality of surfaces. The method also includes epi-growing a semiconductor material in the first and second recesses and, thereafter, forming shallow isolation (STI) features in the substrate.

    Abstract translation: 公开了制造半导体器件的方法。 该示例性方法包括提供具有源极区和漏极区的衬底。 该方法还包括在源极区域内的衬底中形成第一凹槽,以及在漏极区域内的衬底中形成第二凹部。 第一凹部具有第一多个表面,第二凹部具有第二多个表面。 该方法还包括在第一和第二凹陷中外延生长半导体材料,然后在衬底中形成浅隔离(STI)特征。

    ANTENNA STRUCTURE
    216.
    发明申请
    ANTENNA STRUCTURE 审中-公开
    天线结构

    公开(公告)号:US20130050025A1

    公开(公告)日:2013-02-28

    申请号:US13298121

    申请日:2011-11-16

    Abstract: An antenna structure comprises a substrate having a first surface and a second surface, an array of conductor units positioned on the first surface and including at least two conductor units which are coupled, and at least one load metal sheet positioned on at least one of the first surface or the second surface. Each of the conductor units includes an intervening material with two conductors positioned on opposite surfaces of the intervening material.

    Abstract translation: 天线结构包括具有第一表面和第二表面的基板,位于第一表面上的导体单元阵列,并且包括耦合的至少两个导体单元和至少一个载荷金属片,其位于至少一个 第一表面或第二表面。 每个导体单元包括中间材料,其中两个导体位于中间材料的相对表面上。

    MOISTURE-PROOF AND INSULATING COATING MATERIAL AND USES THEREOF
    219.
    发明申请
    MOISTURE-PROOF AND INSULATING COATING MATERIAL AND USES THEREOF 有权
    防潮和绝缘涂料及其用途

    公开(公告)号:US20120277363A1

    公开(公告)日:2012-11-01

    申请号:US13443129

    申请日:2012-04-10

    CPC classification number: H01B3/442 C09D153/005 C09D193/04 H01B3/441

    Abstract: The invention relates to a moisture-proof and insulating coating material comprising a block copolymer or hydrogenated copolymer thereof (A), an adhesive resin (B) and a solvent (C). The block copolymer or hydride (A) comprises at least two vinyl aromatic polymer blocks and at least one conjugated diene polymer block, and in the moisture-proof and insulating coating material, the content of residual vinyl aromatic monomer is less than 300 ppm, and the content of vinyl aromatic oligomer is less than 300 ppm. The moisture-proof and insulating coating material according to the invention has good reworkability. A moisture-proof and insulating film and a method for producing the same and an electrical component comprising the moisture-proof and insulating film and a method for producing the same are also provided in the invention.

    Abstract translation: 本发明涉及包含嵌段共聚物或其氢化共聚物(A),粘合剂树脂(B)和溶剂(C))的防潮和绝缘涂料。 嵌段共聚物或氢化物(A)包含至少两个乙烯基芳族聚合物嵌段和至少一个共轭二烯聚合物嵌段,并且在防潮绝缘涂料中,残余乙烯基芳族单体的含量小于300ppm, 乙烯基芳族低聚物的含量小于300ppm。 本发明的防湿绝缘涂料具有良好的再加工性能。 本发明还提供了一种防潮绝缘膜及其制造方法以及包括防潮绝缘膜的电气部件及其制造方法。

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