公开(公告)号：US20220165878A1

公开(公告)日：2022-05-26

申请号：US17670947

申请日：2022-02-14

申请人： ROHM CO., LTD.

发明人： Akihiro HIKASA

IPC分类号： H01L29/78 ,  H01L29/10 ,  H01L29/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/739

摘要： A semiconductor device includes a semiconductor layer having a main surface in which a trench is formed, a first-conductivity-type body region formed along a sidewall of the trench in a surface layer portion of the main surface of the semiconductor layer, a second-conductivity-type impurity region formed along the sidewall of the trench in a surface layer portion of the body region, a gate insulating layer formed on an inner wall of the trench, a gate electrode that is embedded in the trench and that faces the body region and the impurity region with the gate insulating layer placed between the gate electrode and the body region and between the gate electrode and the impurity region, a contact electrode that passes through the sidewall of the trench from inside the trench and is drawn out to the surface layer portion of the main surface of the semiconductor layer and is electrically connected to the body region and to the impurity region, and an embedded insulating layer that is interposed between the gate electrode and the contact electrode in the trench and that insulates the gate electrode and the contact electrode.

公开(公告)号：US11329166B2

公开(公告)日：2022-05-10

申请号：US15774930

申请日：2016-11-09

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yasuharu Hosaka ,  Yukinori Shima ,  Masataka Nakada ,  Masami Jintyou

IPC分类号： H01L29/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/04 ,  H01L51/50 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/12 ,  H01L27/32

摘要： In a transistor that includes an oxide semiconductor, a change in electrical characteristics is suppressed and the reliability is improved.
A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US11315996B2

公开(公告)日：2022-04-26

申请号：US16621259

申请日：2019-09-10

申请人： SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.

发明人： Baixiang Han

IPC分类号： H01L29/12 ,  H01L27/32 ,  H01L51/56 ,  H01L27/12

摘要： A display panel and a method of manufacturing thereof are provided. The display panel includes a first thin film transistor and a second thin film transistor connected in parallel, a storage capacitor, and a light emitting structure. A projection of the first thin film transistor on a light emitting surface of the display panel overlaps with a projection of the second thin film transistor on the light emitting surface of the display panel. The storage capacitor is located below the light emitting structure, and a projection of the storage capacitor on the light emitting surface of the display panel overlaps with a projection of the light emitting structure on the light emitting surface of the display panel.

公开(公告)号：US11264476B2

公开(公告)日：2022-03-01

申请号：US16349201

申请日：2016-12-27

申请人： INTEL CORPORATION

发明人： Sasikanth Manipatruni ,  Ravi Pillarisetty ,  Dmitri E. Nikonov ,  Ian A. Young ,  James S. Clarke

IPC分类号： H01L29/45 ,  G06N10/00 ,  H01L21/285 ,  H01L29/12 ,  H01L29/66

摘要： Systems, apparatus, and methods for initializing spin qubits with no external magnetic fields are described. An apparatus for quantum computing includes a quantum well and a pair of contacts. At least one of the contacts is formed of a ferromagnetic material. One of the contacts in the pair of contacts interfaces with a semiconductor material at a first position adjacent to the quantum well and the other contact in the pair of contacts interfaces with the semiconductor material at a second position adjacent to the quantum well. The ferromagnetic material initializes an electron or hole with a spin state prior to injection into the quantum well.

公开(公告)号：US11239073B2

公开(公告)日：2022-02-01

申请号：US16177286

申请日：2018-10-31

申请人： MONASH UNIVERSITY

发明人： Michael Sears Fuhrer ,  John Thery Hellerstedt ,  Mark Thomas Edmonds ,  James Lee Richard Jessee Collins ,  Chang Liu

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L43/06 ,  H01L51/05 ,  H01L29/12 ,  H01L29/68 ,  H01L29/16

摘要： Dirac semimetals, methods for modulating charge carrying density and/or band gap in a Dirac semimetal, devices including a Dirac semimetal layer, and methods for forming a Dirac semimetal layer on a substrate are described.

公开(公告)号：US11227765B1

公开(公告)日：2022-01-18

申请号：US16932691

申请日：2020-07-17

申请人： National Chiao Tung University

发明人： Pei-Wen Li ,  Kang-Ping Peng ,  Ching-Lun Chen ,  Tsung-Lin Huang

IPC分类号： H01L21/02 ,  H01L29/165 ,  H01L21/308 ,  H01L29/12

摘要： The invention provides a quantum dot manufacturing method and related quantum dot semiconductor structure. The quantum dot semiconductor structure includes: a conductive ridge on a substrate; an insulative layer covering the substrate and the conductive ridge, wherein the insulative layer includes a top portion and two sidewalls over the conductive ridge; a plurality of quantum dots respectively embedded within a plurality of silicon dioxide spacer islands, which are adhered to the sidewalls of the insulative layer; and a plurality of conductive ledges adhered to the silicon dioxide spacer islands, wherein each of the conductive ledges is a portion of an electrode with alignment to the corresponding quantum dot.

公开(公告)号：US20220005928A1

公开(公告)日：2022-01-06

申请号：US17477168

申请日：2021-09-16

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi TAKEUCHI ,  Ryota SUZUKI ,  Tatsuji NAGAOKA ,  Sachiko AOI

IPC分类号： H01L29/16 ,  H01L21/02 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/12

摘要： In a guard ring section of a silicon carbide semiconductor device, an electric field relaxation layer for relaxing an electric field is formed in a surface layer portion of a drift layer, so that electric field is restricted from penetrating between guard rings. Thus, an electric field concentration is relaxed. Accordingly, a SiC semiconductor device having a required withstand voltage is obtained.

公开(公告)号：US11195893B2

公开(公告)日：2021-12-07

申请号：US16938087

申请日：2020-07-24

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Jieun Lee ,  Minchae Kwak ,  Byungsun Kim ,  Ilgoo Youn ,  Seunghan Jo ,  Junyoung Jo ,  Minhee Choi

IPC分类号： H01L29/12 ,  H01L27/32 ,  H01L27/12

摘要： Provided is a display apparatus including: a substrate in which a display element is arranged; a first thin film transistor arranged in the display area and including a first semiconductor layer including silicon and a first control electrode insulated from the first semiconductor layer; a first interlayer insulating layer covering the first control electrode; a second thin film transistor arranged on the first interlayer insulating layer and including a second semiconductor layer including an oxide semiconductor and a second control electrode insulated from the second semiconductor layer; a second interlayer insulating layer covering the second control electrode; a node connection line arranged on the second interlayer insulating layer and connected to the first control electrode via a first contact hole; a first planarization layer covering the node connection line; and a shielding electrode arranged on the first planarization layer to overlap the node connection line.

公开(公告)号：US11189735B2

公开(公告)日：2021-11-30

申请号：US16736813

申请日：2020-01-08

申请人： JOLED INC.

发明人： Hiroshi Hayashi ,  Naoki Asano ,  Ryo Koshiishi

IPC分类号： H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/786 ,  H01L27/12 ,  H01L21/02 ,  H01L29/12

摘要： A semiconductor device includes a gate electrode, a semiconductor film, and a conductive film. The semiconductor film includes an oxide semiconductor material. The semiconductor film includes a channel region, a low-resistance region, and an intermediate region. The channel region is opposed to the gate electrode. The low-resistance region has a lower electric resistance than the channel region. The intermediate region is provided between the low-resistance region and the channel region. The conductive film is provided selectively in contact with the low-resistance region of the semiconductor film.

公开(公告)号：US11177375B2

公开(公告)日：2021-11-16

申请号：US16308089

申请日：2016-06-09

申请人： Intel Corporation

发明人： Jeanette M. Roberts ,  James S. Clarke ,  Ravi Pillarisetty ,  David J. Michalak ,  Zachary R. Yoscovits

IPC分类号： H01L29/78 ,  H01L29/76 ,  H01L29/778 ,  H01L29/06 ,  H01L29/12 ,  H01L29/423 ,  H01L29/66

摘要： Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack; a plurality of gates disposed on the quantum well stack; and a top gate at least partially disposed on the plurality of gates such that the plurality of gates are at least partially disposed between the top gate and the quantum well stack.