公开(公告)号：US20180076597A1

公开(公告)日：2018-03-15

申请号：US15685009

申请日：2017-08-24

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroyuki FUKUMIZU ,  Tsutomu Kakuno

IPC: H01S5/34 ,  H01S5/022 ,  H01S5/10 ,  H01S5/062 ,  H01S5/343

CPC classification number: H01S5/3402 ,  H01S5/0287 ,  H01S5/06258 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/22 ,  H01S5/227 ,  H01S5/34366 ,  H01S2301/163

Abstract: A quantum cascade laser device includes a substrate, a semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is configured to emit infrared laser light by an intersubband optical transition. A ridge waveguide is provided in the semiconductor stacked body. A distributed feedback region is provided along a first straight line. The ridge waveguide extends along the first straight line. The first electrode is provided at an upper surface of the distributed feedback region. A diffraction grating is arranged along the first straight line. The distributed feedback region includes a an increasing region where a length of the diffraction grating along a direction orthogonal to the first straight line increases from one end portion of the distributed feedback region toward another end portion of the distributed feedback region.

公开(公告)号：US20170324217A1

公开(公告)日：2017-11-09

申请号：US15513376

申请日：2015-09-25

Applicant: THALES

Inventor： Mathieu CARRAS ,  Grégory MAISONS ,  Bouzid SIMOZRAG

IPC: H01S5/12 ,  H01S5/20 ,  H01S5/042 ,  H01S5/026 ,  G02B6/122 ,  H01S5/227 ,  G02B5/18

CPC classification number: H01S5/1231 ,  G02B5/1866 ,  G02B6/122 ,  H01S5/0425 ,  H01S5/2086 ,  H01S5/2202 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/2275 ,  H01S5/2277 ,  H01S5/3013 ,  H01S5/3402 ,  H01S2301/176

Abstract: A reproducible method for producing a resonant structure of a distributed-feedback semiconductor laser exhibiting a narrow waveguide of the order of some ten micrometers, the production of the diffraction grating being carried out subsequent to the step of producing the strip is provided. In a last step, a diffraction grating is engraved as a function of a desired precise wavelength.

公开(公告)号：US09804028B2

公开(公告)日：2017-10-31

申请号：US14616673

申请日：2015-02-07

Applicant: Spectral Sciences, Inc.

Inventor： Pajo Vukovic-Cvijin

IPC: H01S3/10 ,  G01J3/433 ,  G01J3/10 ,  H01S5/14 ,  H01S5/40 ,  G01J3/02 ,  G01J3/18 ,  H01S3/08 ,  H01S5/10 ,  H01S5/34 ,  H01S3/081 ,  H01S5/022 ,  G01J3/42

CPC classification number: G01J3/433 ,  G01J3/0229 ,  G01J3/10 ,  G01J3/18 ,  G01J2003/423 ,  H01S3/08009 ,  H01S3/0816 ,  H01S5/02248 ,  H01S5/1092 ,  H01S5/141 ,  H01S5/3402 ,  H01S5/4062 ,  H01S5/4087

Abstract: A tunable laser source that includes multiple gain elements and uses a spatial light modulator in an external cavity to produce spectrally tunable output is claimed. Several designs of the external cavity are described, targeting different performance characteristics and different manufacturing costs for the device. Compared to existing devices, the tunable laser source produces high output power, wide tuning range, fast tuning rate, and high spectral resolution.

公开(公告)号：US09774168B2

公开(公告)日：2017-09-26

申请号：US15088490

申请日：2016-04-01

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： Jun-ichi Hashimoto

IPC: H01S5/00 ,  H01S3/08 ,  H01S5/34 ,  H01S3/067 ,  H01S5/227 ,  H01S5/022 ,  H01S5/125 ,  H01S5/024 ,  H01S5/22

CPC classification number: H01S5/3402 ,  H01S3/0675 ,  H01S5/0224 ,  H01S5/02461 ,  H01S5/125 ,  H01S5/2214 ,  H01S5/2224 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3401

Abstract: A quantum cascade semiconductor laser includes a substrate with a main surface including a waveguide area and a distributed Bragg reflection area that are arranged in a direction of a first axis; a laser region provided on the waveguide area, the laser region including a mesa waveguide having first and second side surfaces, and first and second burying regions provided on the first and second side surfaces, respectively; a distributed Bragg reflection region provided on the distributed Bragg reflection area, the distributed Bragg reflection region including a semiconductor wall having first bulk semiconductor regions and first laminate regions that are alternately arrayed in a direction of a second axis intersecting the first axis; and an upper electrode provided on the laser region. Each first bulk semiconductor region includes a bulk semiconductor layer. Each first laminate region includes a stacked semiconductor layer having a plurality of semiconductor layers.

公开(公告)号：US09735549B2

公开(公告)日：2017-08-15

申请号：US15221402

申请日：2016-07-27

Applicant: Massachusetts Institute of Technology ,  Pendar Technologies, LLC

Inventor： Anish K. Goyal ,  Laurent Diehl ,  Christian Pfluegl ,  Christine A. Wang ,  Mark Francis Witinski

IPC: H01L29/06 ,  H01S5/34 ,  H01L29/15 ,  H01S5/026 ,  H01S5/20 ,  B82Y20/00 ,  H01S5/30 ,  H01S5/227

CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01L29/15 ,  H01S5/026 ,  H01S5/2018 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3013

Abstract: Photonic integrated circuits (PICs) are based on quantum cascade (QC) structures. In embodiment methods and corresponding devices, a QC layer in a wave confinement region of an integrated multi-layer semiconductor structure capable of producing optical gain is depleted of free charge carriers to create a low-loss optical wave confinement region in a portion of the structure. Ion implantation may be used to create energetically deep trap levels to trap free charge carriers. Other embodiments include modifying a region of a passive, depleted QC structure to produce an active region capable of optical gain. Gain or loss may also be modified by partially depleting or enhancing free charge carrier density. QC lasers and amplifiers may be integrated monolithically with each other or with passive waveguides and other passive devices in a self-aligned manner. Embodiments overcome challenges of high cost, complex fabrication, and coupling loss involved with material re-growth methods.

公开(公告)号：US09685766B2

公开(公告)日：2017-06-20

申请号：US14725789

申请日：2015-05-29

Applicant: Thorlabs Quantum Electronics, Inc.

Inventor： Catherine Genevieve Caneau ,  Feng Xie ,  Chung-En Zah

IPC: H01S3/10 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/343 ,  H01S5/026 ,  H01S5/125 ,  H01S5/40

CPC classification number: H01S5/3402 ,  B82Y20/00 ,  H01S5/026 ,  H01S5/0268 ,  H01S5/0612 ,  H01S5/125 ,  H01S5/305 ,  H01S5/34313 ,  H01S5/3434 ,  H01S5/4068 ,  H01S5/4087

Abstract: Disclosed is a method of forming a laser source capable of producing mid-IR laser radiation comprises growing a first core structure on a substrate, etching away the first core structure in one or more locations, and growing a second core structure on the substrate. At least one of the core structures comprises a quantum cascade gain medium emitting at a frequency within the range from 3-14 μm. Also disclosed is a laser source capable of producing mid-IR laser radiation comprising a quantum-cascade core positioned on a substrate for emitting within the range from 3-14 μm and a second core on the substrate positioned in-plane relative to the first core. The second core is one of a) a passive waveguide core b) a second quantum-cascade core and c) a semiconductor active core region.

公开(公告)号：US20170170634A1

公开(公告)日：2017-06-15

申请号：US15372346

申请日：2016-12-07

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.

Inventor： YUKIHIRO TSUJI

IPC: H01S5/34 ,  H01S5/12 ,  H01S5/227

CPC classification number: H01S5/3402 ,  H01S5/12 ,  H01S5/125 ,  H01S5/2224 ,  H01S5/2275 ,  H01S5/3401

Abstract: A method for producing a quantum cascade laser includes the steps of growing a stacked semiconductor layer including a core layer; forming an insulating mask on the stacked semiconductor layer; forming a mesa structure including the core layer by etching the stacked semiconductor layer through the insulating mask; growing a buried layer on a side surface of the mesa structure using the insulating mask by supplying a halogen-based substance and a gas containing a raw material, the buried layer having a thickness larger than a height of the mesa structure; producing a substrate product including the mesa structure and a buried region by processing of the buried layer using a chemical-mechanical polishing method; and after removal of the insulating mask, producing a distributed reflection structure by etching the mesa structure and the buried region of the substrate product using a mask.

公开(公告)号：US20170077675A1

公开(公告)日：2017-03-16

申请号：US15120254

申请日：2015-02-24

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Susumu NODA ,  Takuya INOUE ,  Takashi ASANO ,  Menaka DE ZOYSA

IPC: H01S5/10 ,  H01S5/024 ,  H01S5/02 ,  H01S5/34 ,  H01S5/042

CPC classification number: H01S5/18319 ,  H01S5/0014 ,  H01S5/0207 ,  H01S5/02453 ,  H01S5/02461 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/0428 ,  H01S5/105 ,  H01S5/18316 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3402 ,  H01S5/3419 ,  H01S2302/02

Abstract: A thermal emission source capable of switching the intensity of light at a high response speed similarly to a photoelectric conversion element. A thermal emission source includes: a two-dimensional photonic crystal including a slab in which an n-layer made of an n-type semiconductor, a quantum well structure layer having a quantum well structure, and a p-layer made of a p-type semiconductor are stacked in the mentioned order in the thickness direction, wherein modified refractive index areas (air holes) whose refractive index differs from the refractive indices of the n-layer, the p-layer and the quantum well structure layer are cyclically arranged in the slab so as to resonate with a specific wavelength of light corresponding to a transition energy between the subbands in a quantum well in the quantum well structure layer; and a p-type electrode and an n-type electrode for applying, to the slab, a voltage which is negative on the side of the p-layer and positive on the side of the n-layer.

Abstract translation: 与光电转换元件类似的能够以高响应速度切换光的强度的热发射源。 热发射源包括：二维光子晶体，其包括其中由n型半导体制成的n层，具有量子阱结构的量子阱结构层和由p-型半导体制成的p层的板， 类型半导体沿厚度方向以上述顺序堆叠，其折射率与n层，p层和量子阱结构层的折射率不同的改性折射率区域（空气孔）循环地布置在 以便与量子阱结构层中的量子阱中的子带之间的跃变能相对应的特定波长的光谐振; 以及p型电极和n型电极，用于向所述板施加在所述p层侧为负的电压，并且在所述n层的一侧为正。

公开(公告)号：US20170063038A1

公开(公告)日：2017-03-02

申请号：US15253382

申请日：2016-08-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Akio ITO ,  Tatsuo DOUGAKIUCHI ,  Kazuue FUJITA ,  Tadataka EDAMURA

IPC: H01S5/10 ,  H01S5/24 ,  H01S3/08 ,  H01S5/12 ,  H01S5/34 ,  H01S5/14

CPC classification number: H01S5/142 ,  H01S5/0207 ,  H01S5/0604 ,  H01S5/1092 ,  H01S5/12 ,  H01S5/24 ,  H01S5/3402 ,  H01S2302/02

Abstract: A quantum cascade laser is configured with a semiconductor substrate, and an active layer having a multistage lamination of emission layers and injection layers. The active layer is configured to be capable of generating first pump light of a frequency ω1 and second pump light of a frequency ω2, and to generate output light of a difference frequency ω by difference frequency generation. An external diffraction grating is provided for generating the first pump light, outside an element structure portion including the active layer, and an internal diffraction grating is provided for generating the second pump light, inside the element structure portion. The frequency ω2 is set to be fixed to a frequency not coincident with a gain peak, and the frequency ω1 is set to be variable to a frequency different from the frequency ω2.

Abstract translation: 量子级联激光器配置有半导体衬底，以及具有发射层和注入层的多级叠层的有源层。 有源层被配置为能够产生频率ω1的第一泵浦光和频率ω2的第二泵浦光，并且通过差频产生产生差频ω的输出光。 提供外部衍射光栅，用于在包括有源层的元件结构部分外部产生第一泵浦光，并且在元件结构部分内部设置内部衍射光栅以产生第二泵浦光。 频率ω2被设定为固定为与增益峰值不一致的频率，频率ω1被设定为可变至不同于频率ω2的频率。

公开(公告)号：US09570884B2

公开(公告)日：2017-02-14

申请号：US13817817

申请日：2012-01-25

Applicant: Krzysztof Nowak ,  Osamu Wakabayashi

Inventor： Krzysztof Nowak ,  Osamu Wakabayashi

IPC: H01S5/06 ,  B82Y20/00 ,  G03F7/20 ,  H01S3/23 ,  H01S5/062 ,  H01S3/13 ,  H01S3/223 ,  H01S5/065 ,  H01S5/14 ,  H01S5/34 ,  H01S5/40 ,  H05G2/00

CPC classification number: H01S5/06 ,  B82Y20/00 ,  G03F7/70025 ,  G03F7/70033 ,  H01S3/1305 ,  H01S3/2232 ,  H01S3/2316 ,  H01S3/235 ,  H01S3/2375 ,  H01S5/0612 ,  H01S5/06216 ,  H01S5/0622 ,  H01S5/0653 ,  H01S5/0654 ,  H01S5/141 ,  H01S5/3402 ,  H01S5/4025 ,  H05G2/003 ,  H05G2/005 ,  H05G2/008

Abstract: A laser apparatus may include: a master oscillator configured to output a pulsed laser beam at a repetition rate, the master oscillator including at least one semiconductor laser apparatus; at least one amplifier configured to amplify the pulsed laser beam from the master oscillator, the at least one amplifier being configured to include at least one gain bandwidth; and a controller for controlling a parameter affecting an output wavelength of the pulsed laser beam from the master oscillator such that a wavelength chirping range of the pulsed laser beam from the master oscillator overlaps at least a part of the at least one gain bandwidth.

Abstract translation: 激光装置可以包括：主振荡器，其被配置为以重复频率输出脉冲激光束，所述主振荡器包括至少一个半导体激光装置; 至少一个放大器被配置为放大来自所述主振荡器的所述脉冲激光束，所述至少一个放大器被配置为包括至少一个增益带宽; 以及控制器，用于控制影响来自主振荡器的脉冲激光束的输出波长的参数，使得来自主振荡器的脉冲激光束的波长啁啾范围与至少一个增益带宽的至少一部分重叠。