公开(公告)号：US20240266169A1

公开(公告)日：2024-08-08

申请号：US18568801

申请日：2022-06-10

申请人： JUSUNG ENGINEERING CO., LTD.

发明人： Chul Joo HWANG

IPC分类号： H01L21/02 ,  H01L29/66

CPC分类号： H01L21/0262 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02664 ,  H01L29/66522

摘要： Provided is a method for manufacturing a power semiconductor device, which includes forming an active layer on an SiC substrate. The forming of the active layer includes injecting a source gas onto the SiC substrate, performing primary purging of injecting a purge gas after stopping the injecting of the source gas, injecting a reactant gas after stopping the primary purging, and performing secondary purging of injecting the purging gas after stopping the injecting of the reactant gas. Thus, in accordance with exemplary embodiments, the active layer may be formed at a low temperature. Therefore, a substrate or a thin film formed on the substrate may be prevented from being damaged by high-temperature heat. In addition, power or a time required for heating the substrate to form the active layer may be saved, and an overall process time may be shortened.

公开(公告)号：US20240258379A1

公开(公告)日：2024-08-01

申请号：US18632275

申请日：2024-04-10

申请人： UNITED MICROELECTRONICS CORP.

发明人： Chia-Hua Chang ,  Jian-Feng Li ,  Hsiang-Chieh Yen

IPC分类号： H01L29/15 ,  H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/157 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/30625 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786

摘要： The present disclosure provides a semiconductor device, the semiconductor device including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer includes a first superlattice layer having at least two heteromaterials alternately arranged in a horizontal direction, and a second superlattice layer having at least two heteromaterials vertically stacked along a vertical direction. The at least two heteromaterials stack at least once within the second superlattice layer. The active layer is disposed on the buffer layer, and the gate electrode is disposed on the active layer.

公开(公告)号：US20240247407A1

公开(公告)日：2024-07-25

申请号：US18586297

申请日：2024-02-23

申请人： Applied Materials, Inc.

发明人： Michael Chudzik ,  Max Batres ,  Michel Khoury

IPC分类号： C30B29/40 ,  C30B25/02 ,  C30B33/08 ,  H01L21/02 ,  H01L33/00

CPC分类号： C30B29/406 ,  C30B33/08 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/0075 ,  C30B25/02

摘要： Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm.

公开(公告)号：US20240229293A1

公开(公告)日：2024-07-11

申请号：US18506315

申请日：2023-11-10

申请人： University of South Carolina

发明人： Iftikhar Ahmad ,  Mohi Uddin Jewel ,  Samiul Hasan

IPC分类号： C30B25/18 ,  C30B29/16 ,  H01L21/02

CPC分类号： C30B25/183 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02565 ,  H01L21/0262

摘要： Described herein are alternative uses of silicon for β-Ga2O3 MOCVD heteroepitaxy as a phase stabilizer in the form of silicon-oxygen (Si—O) bonding that provides thermal annealing for achieving smooth and thick monoclinic phase-pure gallium oxide (β-Ga2O3) on sapphire, which can provide β-Ga2O3 growth on thermally conductive hexagonal substrates, such as AlN, 4H—SiC, and 6H—SiC.

公开(公告)号：US12034067B2

公开(公告)日：2024-07-09

申请号：US17439820

申请日：2019-05-15

申请人： SOUTH CHINA UNIVERSITY OF TECHNOLOGY

发明人： Guoqiang Li ,  Dingbo Chen ,  Zhikun Liu ,  Lijun Wan

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66

CPC分类号： H01L29/778 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66462

摘要： A GaN-HEMT device with a sandwich structure and a method for preparing the same are provided. The GaN-HEMT device includes an epitaxial layer and electrodes, wherein the epitaxial layer includes a GaN channel layer (2) and an AlyGa1-y barrier layer (1), and is arranged from top to bottom; the electrodes include a gate electrode (6), a source electrode (7), a drain electrode (5) and a field plate electrode (10), wherein the field plate electrode (10) and the gate electrode (6) are respectively fabricated on an upper surface and a lower surface of the epitaxial layer, and the field plate electrode (10) extends to a region beyond the epitaxial layer and is connected with the gate electrode (6) to form the sandwich structure, and the source electrode (7) and the drain electrode (5) are respectively located at two ends of the epitaxial layer.

公开(公告)号：US12027602B2

公开(公告)日：2024-07-02

申请号：US17093549

申请日：2020-11-09

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jian-Feng Li ,  Chia-Hua Chang ,  Hsiang-Chieh Yen

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/20 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/02293 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7786

摘要： A high electron mobility transistor (HEMT) is disclosed. The HEMT includes a substrate, a first epitaxial layer disposed on the substrate, a second epitaxial layer disposed on the first epitaxial layer, a third epitaxial layer disposed on the second epitaxial layer, and a gate disposed on the third epitaxial layer. An upper portion of the first epitaxial layer has a plurality of first recesses. The second epitaxial layer partially fills the first recesses and surrounding a plurality of first air slits in the first recesses.

公开(公告)号：US12012525B2

公开(公告)日：2024-06-18

申请号：US17090904

申请日：2020-11-06

申请人： SOULBRAIN CO., LTD.

发明人： Jae-Wan Park ,  Jung-Hun Lim ,  Jin-Uk Lee

IPC分类号： C09G1/04 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H10B43/27 ,  H10B43/35 ,  H01L21/762

CPC分类号： C09G1/04 ,  H01L21/02458 ,  H01L21/31056 ,  H01L21/31111 ,  H10B43/27 ,  H10B43/35 ,  H01L21/76224

摘要： The present invention relates to a composition for etching, comprising a first inorganic acid, a first additive represented by Chemical Formula 1, and a solvent.
The composition for etching is a high-selectivity composition that can selectively remove a nitride film while minimizing the etch rate of an oxide film, and which does not have problems such as particle generation, which adversely affect the device characteristics.

公开(公告)号：US20240153761A1

公开(公告)日：2024-05-09

申请号：US17773293

申请日：2020-10-30

申请人： HC SEMITEK (ZHEJIANG) CO., LTD.

发明人： Hongpo HU ,  Binzhong DONG ,  Peng LI ,  Jiangbo WANG

IPC分类号： H01L21/02

CPC分类号： H01L21/02293 ,  H01L21/02348 ,  H01L21/02458 ,  H01L21/02483 ,  H01L21/0254

摘要： A substrate stripping method and an epitaxial wafer, relating to the technical field of semiconductors. The method comprises: providing a substrate (1), the substrate (1) having a recess, and the recess being distributed on a first surface (1a) of the substrate (1); forming a hydrophilic layer (3) in the recess; forming, on the first surface (1a), an etching sacrificial layer (4) covering the first surface (1a), the etching sacrificial layer (4) and the recess defining a flowing space (A); growing an epitaxial layer (5) on the etching sacrificial layer (4); and soaking the etching sacrificial layer (4) and the substrate (1) in an etching liquid, and corroding the etching sacrificial layer (4) by means of the etching liquid until the epitaxial layer (5) is separated from the substrate (1). The method can rapidly and uniformly etch the etching sacrificial layer (4).

公开(公告)号：US11978629B2

公开(公告)日：2024-05-07

申请号：US17297659

申请日：2019-11-27

申请人： KOREA POLYTECHNIC UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION

发明人： Ok Hyun Nam ,  Ui Ho Choi

IPC分类号： H01L21/02 ,  H01L29/20 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L21/0254 ,  H01L21/02271 ,  H01L21/02458 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/778

摘要： The present invention relates to a method of manufacturing an AlN-based transistor. An AlN-based high electron mobility transistor (HEMT) element according to the present invention may use an AlN buffer layer, and include an AlGaN composition change layer inserted into a GaN/AlN interface to remove or suppress a degree of generation of a two-dimensional hole gas (2DHG), thereby decreasing an influence of a coulomb drag on a two-dimensional electron gas (2DEG) layer and improving mobility of a two-dimensional electron gas (2DEG).

公开(公告)号：US20240136176A1

公开(公告)日：2024-04-25

申请号：US18546063

申请日：2022-03-02

申请人： ams-OSRAM International GmbH

发明人： Jelena Ristic

IPC分类号： H01L21/02 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L21/02507 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/02422 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02485 ,  H01L21/0254 ,  H01L31/1852 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0087

摘要： In an embodiment a growth substrate includes a substrate and a buffer layer sequence having a plurality of semiconductor layers based on a nitride semiconductor compound material and a plurality of buffer layers, wherein the semiconductor layers and the buffer layers are arranged alternatingly, and wherein the buffer layers comprise at least one of the following two-dimensional layered materials: graphene, boron nitride, MoS2, WSe2 or fluorographene.