公开(公告)号：US20240229293A1

公开(公告)日：2024-07-11

申请号：US18506315

申请日：2023-11-10

申请人： University of South Carolina

发明人： Iftikhar Ahmad ,  Mohi Uddin Jewel ,  Samiul Hasan

IPC分类号： C30B25/18 ,  C30B29/16 ,  H01L21/02

CPC分类号： C30B25/183 ,  C30B29/16 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02565 ,  H01L21/0262

摘要： Described herein are alternative uses of silicon for β-Ga2O3 MOCVD heteroepitaxy as a phase stabilizer in the form of silicon-oxygen (Si—O) bonding that provides thermal annealing for achieving smooth and thick monoclinic phase-pure gallium oxide (β-Ga2O3) on sapphire, which can provide β-Ga2O3 growth on thermally conductive hexagonal substrates, such as AlN, 4H—SiC, and 6H—SiC.

公开(公告)号：US20240258403A1

公开(公告)日：2024-08-01

申请号：US18520979

申请日：2023-11-28

申请人： University of South Carolina

发明人： Iftikhar Ahmad ,  Samiul Hasan ,  Mohi Uddin Jewel

IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L29/51 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L29/408 ,  H01L29/517 ,  H01L29/7786

摘要： Described herein are methods, systems, and processes for in-situ oxide dielectric deposition in the same reactor, integrating III-Nitride and III-Oxide technology using N2 as carrier gas that results in a lower density of interface traps (charges).