- 专利标题： PHASE STABILIZED GROWTH OF MONOCLINIC-GALLIUM OXIDE ON THERMALLY CONDUCTING MATERIALS
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申请号： US18506315申请日： 2023-11-10
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公开(公告)号： US20240229293A1公开(公告)日： 2024-07-11
- 发明人: Iftikhar Ahmad , Mohi Uddin Jewel , Samiul Hasan
- 申请人： University of South Carolina
- 申请人地址： US SC Columbia
- 专利权人： University of South Carolina
- 当前专利权人： University of South Carolina
- 当前专利权人地址： US SC Columbia
- 主分类号： C30B25/18
- IPC分类号： C30B25/18 ; C30B29/16 ; H01L21/02
摘要：
Described herein are alternative uses of silicon for β-Ga2O3 MOCVD heteroepitaxy as a phase stabilizer in the form of silicon-oxygen (Si—O) bonding that provides thermal annealing for achieving smooth and thick monoclinic phase-pure gallium oxide (β-Ga2O3) on sapphire, which can provide β-Ga2O3 growth on thermally conductive hexagonal substrates, such as AlN, 4H—SiC, and 6H—SiC.
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