公开(公告)号：US20240258378A1

公开(公告)日：2024-08-01

申请号：US18632253

申请日：2024-04-10

申请人： UNITED MICROELECTRONICS CORP.

发明人： Chia-Hua Chang ,  Jian-Feng Li ,  Hsiang-Chieh Yen

IPC分类号： H01L29/15 ,  H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/157 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/30625 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786

摘要： The present disclosure provides a semiconductor device and a fabricating method thereof, the semiconductor device including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer includes a first superlattice layer having at least two heteromaterials alternately arranged in a horizontal direction, and a second superlattice layer having at least two heteromaterials vertically stacked along a vertical direction. The at least two heteromaterials stack at least once within the second superlattice layer. The active layer is disposed on the buffer layer, and the gate electrode is disposed on the active layer.

公开(公告)号：US20220285500A1

公开(公告)日：2022-09-08

申请号：US17234731

申请日：2021-04-19

申请人： UNITED MICROELECTRONICS CORP.

发明人： Chia-Hua Chang ,  Jian-Feng Li ,  Hsiang-Chieh Yen

IPC分类号： H01L29/15 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L21/02 ,  H01L21/306 ,  H01L29/66

摘要： The present disclosure provides a semiconductor device and a fabricating method thereof, the semiconductor device including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer includes a first superlattice layer having at least two heteromaterials alternately arranged in a horizontal direction, and a second superlattice layer having at least two heteromaterials vertically stacked along a vertical direction. The at least two heteromaterials stack at least once within the second superlattice layer. The active layer is disposed on the buffer layer, and the gate electrode is disposed on the active layer.

公开(公告)号：US20240258379A1

公开(公告)日：2024-08-01

申请号：US18632275

申请日：2024-04-10

申请人： UNITED MICROELECTRONICS CORP.

发明人： Chia-Hua Chang ,  Jian-Feng Li ,  Hsiang-Chieh Yen

IPC分类号： H01L29/15 ,  H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/157 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/30625 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786

摘要： The present disclosure provides a semiconductor device, the semiconductor device including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer includes a first superlattice layer having at least two heteromaterials alternately arranged in a horizontal direction, and a second superlattice layer having at least two heteromaterials vertically stacked along a vertical direction. The at least two heteromaterials stack at least once within the second superlattice layer. The active layer is disposed on the buffer layer, and the gate electrode is disposed on the active layer.

公开(公告)号：US12027602B2

公开(公告)日：2024-07-02

申请号：US17093549

申请日：2020-11-09

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jian-Feng Li ,  Chia-Hua Chang ,  Hsiang-Chieh Yen

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/20 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/02293 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7786

摘要： A high electron mobility transistor (HEMT) is disclosed. The HEMT includes a substrate, a first epitaxial layer disposed on the substrate, a second epitaxial layer disposed on the first epitaxial layer, a third epitaxial layer disposed on the second epitaxial layer, and a gate disposed on the third epitaxial layer. An upper portion of the first epitaxial layer has a plurality of first recesses. The second epitaxial layer partially fills the first recesses and surrounding a plurality of first air slits in the first recesses.

公开(公告)号：US11990518B2

公开(公告)日：2024-05-21

申请号：US17234731

申请日：2021-04-19

申请人： UNITED MICROELECTRONICS CORP.

发明人： Chia-Hua Chang ,  Jian-Feng Li ,  Hsiang-Chieh Yen

IPC分类号： H01L29/15 ,  H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66 ,  H01L29/778

CPC分类号： H01L29/157 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/30625 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786

摘要： The present disclosure provides a semiconductor device and a fabricating method thereof, the semiconductor device including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer includes a first superlattice layer having at least two heteromaterials alternately arranged in a horizontal direction, and a second superlattice layer having at least two heteromaterials vertically stacked along a vertical direction. The at least two heteromaterials stack at least once within the second superlattice layer. The active layer is disposed on the buffer layer, and the gate electrode is disposed on the active layer.

公开(公告)号：US20240322007A1

公开(公告)日：2024-09-26

申请号：US18675105

申请日：2024-05-27

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jian-Feng Li ,  Chia-Hua Chang ,  Hsiang-Chieh Yen

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/20 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/02293 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7786

摘要： A method for forming a high electron mobility transistor includes the steps of providing a substrate, forming a first epitaxial layer on the substrate, forming a plurality of first recesses in an upper portion of the first epitaxial layer, forming a second epitaxial layer on the first epitaxial layer and partially filling the first recesses to seal a plurality of first air slits in the first recesses, forming a third epitaxial layer on the second epitaxial layer, and forming a gate on the third epitaxial layer.

公开(公告)号：US20240313087A1

公开(公告)日：2024-09-19

申请号：US18675098

申请日：2024-05-27

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jian-Feng Li ,  Chia-Hua Chang ,  Hsiang-Chieh Yen

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/20 ,  H01L29/778

CPC分类号： H01L29/66462 ,  H01L21/02293 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/7786

摘要： A high electron mobility transistor includes a substrate having a continuous planar front surface, a first epitaxial layer directly and continuous disposed on the continuous planar front surface of the substrate, a plurality of first recesses arranged in an upper portion of the first epitaxial layer, a second epitaxial layer directly disposed on the first epitaxial layer and partially filling the first recesses and surrounding a plurality of first air slits in the first recesses, a third epitaxial layer disposed on the second epitaxial layer, and a gate disposed on the third epitaxial layer.

公开(公告)号：US20220115520A1

公开(公告)日：2022-04-14

申请号：US17093549

申请日：2020-11-09

申请人： UNITED MICROELECTRONICS CORP.

发明人： Jian-Feng Li ,  Chia-Hua Chang ,  Hsiang-Chieh Yen

IPC分类号： H01L29/66 ,  H01L29/20 ,  H01L21/02 ,  H01L29/778

摘要： A high electron mobility transistor (HEMT) is disclosed. The HEMT includes a substrate, a first epitaxial layer disposed on the substrate, a second epitaxial layer disposed on the first epitaxial layer, a third epitaxial layer disposed on the second epitaxial layer, and a gate disposed on the third epitaxial layer. An upper portion of the first epitaxial layer has a plurality of first recesses. The second epitaxial layer partially fills the first recesses and surrounding a plurality of first air slits in the first recesses.