公开(公告)号：US20170350038A1

公开(公告)日：2017-12-07

申请号：US15499100

申请日：2017-04-27

申请人： Applied Materials, Inc.

发明人： Kin Pong LO ,  Schubert S. CHU

IPC分类号： C30B25/18 ,  H01L21/67 ,  C30B29/06 ,  H01L21/02 ,  C30B29/52 ,  H01L21/677 ,  C30B25/20

CPC分类号： C30B25/186 ,  C30B25/00 ,  C30B29/06 ,  C30B29/52 ,  C30B35/00 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32899 ,  H01L21/02046 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/67201 ,  H01L21/67207

摘要： Implementations of the present disclosure generally relate to an improved vacuum processing system. In one implementation, the vacuum processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma-cleaning chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma-cleaning chamber for removing carbon-containing contaminants from the surface of the substrate.

公开(公告)号：US20170283944A1

公开(公告)日：2017-10-05

申请号：US15508421

申请日：2015-06-24

申请人： SUMITOMO CHEMICAL COMPANY, LIMITED

发明人： Hajime FUJIKURA

IPC分类号： C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C30B25/16 ,  B08B5/02 ,  C30B29/40 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  C23C16/46 ,  C30B25/14

CPC分类号： C23C16/4401 ,  B08B5/02 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/54 ,  C30B25/14 ,  C30B25/165 ,  C30B29/40 ,  C30B29/406 ,  C30B35/00 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/205 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/68714 ,  H01L21/68785

摘要： There is provided a semiconductor manufacturing device, including: a processing vessel; a partition wall that divides at least a part of a space in the processing vessel into a growth section and a cleaning section; a substrate holding member disposed in the growth section; a source gas supply system that supplies a source gas into the growth section; a cleaning gas supply system that supplies a cleaning gas into the cleaning section; and a heater that heats the growth section and the cleaning section.

公开(公告)号：US20170259294A1

公开(公告)日：2017-09-14

申请号：US15604900

申请日：2017-05-25

申请人： APPLIED MATERIALS, INC.

发明人： JOSEPH M. RANISH ,  KAILASH PATALAY

IPC分类号： B05C13/00 ,  H01L21/687 ,  C30B23/02 ,  H01L21/67 ,  C30B35/00

CPC分类号： B05C13/00 ,  C30B23/02 ,  C30B35/00 ,  H01L21/67115 ,  H01L21/68735

摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit, the process kit comprising a first ring to support a substrate proximate a peripheral edge of the substrate; a second ring disposed about the first ring; and a path formed between the first and second rings that allows the first ring to rotate with respect to the second ring, wherein the path substantially prevents light from travelling between a first volume disposed below the first and second rings and a second volume disposed above the first and second rings.

公开(公告)号：US20170233888A1

公开(公告)日：2017-08-17

申请号：US15585371

申请日：2017-05-03

申请人： Applied Materials, Inc.

发明人： Dennis L. DEMARS

IPC分类号： C30B25/14 ,  C23C16/455 ,  H01L21/67 ,  C23C16/44

CPC分类号： C30B25/14 ,  C23C16/4412 ,  C23C16/45561 ,  C30B35/00 ,  H01L21/67017 ,  H01L21/6719

摘要： A substrate processing system is described that has a reactor and a gas panel, and a common exhaust for the reactor and the gas panel. An exhaust conduit from the reactor is routed to the gas panel, and exhaust gases from the reactor are used to purge the gas panel. Gases from the reactor may be cooled before flowing to the gas panel.

公开(公告)号：US09724666B1

公开(公告)日：2017-08-08

申请号：US13656615

申请日：2012-10-19

申请人： Soraa, Inc.

发明人： Pakalapati Tirumala Rajeev ,  Douglas W. Pocius ,  Mark P. D'Evelyn

IPC分类号： B01J19/06 ,  C30B7/10 ,  C30B35/00

CPC分类号： B01J19/06 ,  A61B6/12 ,  A61M25/00 ,  A61M25/0105 ,  A61M25/0113 ,  A61M25/09 ,  A61M25/09041 ,  A61M25/0905 ,  A61M2025/09133 ,  C30B7/10 ,  C30B35/00

摘要： An apparatus to contain the reaction vessel in which gallium nitride crystals (henceforth referred to as bulk crystals) can be grown using the ammonothermal method at high pressure and temperature is disclosed. The apparatus provides adequate containment in all directions, which, for a typical cylindrical vessel, can be classified as radial and axial. Furthermore, depending on the specifics of the design parameters, the apparatus is capable of operating at a temperature up to 1,200 degrees Celsius, a pressure up to 2,000 MPa, and for whatever length of time is necessary to grow satisfactory bulk crystals. The radial constraint in the current disclosure is provided by using several stacked composite rings. The design of the apparatus is scalable to contain reaction volumes larger than 100 cubic centimeters.

公开(公告)号：US09702056B2

公开(公告)日：2017-07-11

申请号：US14126942

申请日：2012-06-11

申请人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

发明人： Kazuhito Kamei ,  Kazuhiko Kusunoki ,  Nobuyoshi Yashiro ,  Nobuhiro Okada ,  Hironori Daikoku ,  Motohisa Kado ,  Hidemitsu Sakamoto

IPC分类号： C30B15/10 ,  C30B35/00 ,  C30B19/02 ,  C30B29/36 ,  C30B17/00 ,  C30B19/08

CPC分类号： C30B15/10 ,  C30B17/00 ,  C30B19/02 ,  C30B19/08 ,  C30B29/36 ,  C30B35/00 ,  Y10T117/1032

摘要： A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. An apparatus includes a seed shaft and a crucible for an SiC solution. The seed shaft has a lower end surface for attachment to an SiC seed crystal. The crucible comprises a main body, an intermediate cover, and a top cover. The main body includes a first cylindrical portion and a bottom portion at a lower end portion of the first cylindrical portion. The intermediate cover is within the first cylindrical portion and above the liquid level of the SiC solution in the main body. The intermediate cover has a first through hole for the seed shaft. The top cover is disposed above the intermediate cover and has a second through hole for the seed shaft to pass through.

公开(公告)号：US20170186937A1

公开(公告)日：2017-06-29

申请号：US15308819

申请日：2015-05-06

申请人： CTG Advanced Materials, LLC

发明人： Pengdi Han ,  Jian Tian ,  Stephen Dynan ,  Brandon Stone

IPC分类号： H01L41/083 ,  H01L41/047 ,  H01L41/277 ,  H01L41/18 ,  H01L41/09

CPC分类号： H01L41/083 ,  C30B11/001 ,  C30B11/08 ,  C30B29/22 ,  C30B35/00 ,  H01L41/18 ,  H01L41/277 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1076 ,  Y10T117/108 ,  Y10T117/1092

摘要： A system and method provides a piezoelectric stack arrangement for reduced driving voltage while maintaining a driving level for active piezoelectric materials. A stack arrangement of d36 shear mode single crystals of both air X-cut and Y-cut ±1:45° (±20°) arrangement are bonded with discrete conductive pillars to form a shear crystal stack. The bonding area between the neighboring crystal parts is minimized. The bonding pillars are positioned at less than a total surface are of the single crystal forming the stack. The stack fabrication is facilitated with a precision assembly system, where crystal parts are placed to desired locations on an assembly fixture for alignment following the preset operation steps. With the reduced clamping effect from bonding due to lower surface coverage of the discrete conductive pillars, such a piezoelectric d36 shear crystal stack exhibits a reduced driving voltage while maintaining a driving level and substantial and surprisingly improved performance.

公开(公告)号：US09644895B2

公开(公告)日：2017-05-09

申请号：US14385511

申请日：2013-04-03

申请人： EUGENE TECHNOLOGY CO., LTD.

发明人： Il-Kwang Yang ,  Byoung-Gyu Song ,  Kyong-Hun Kim ,  Yong-Ki Kim ,  Yang-Sik Shin

IPC分类号： H05B3/68 ,  F27D19/00 ,  F27D7/02 ,  F27D7/06 ,  H01L21/67 ,  H01L21/687 ,  C23C16/46 ,  C30B25/10 ,  C30B33/12 ,  C30B35/00

CPC分类号： F27D19/00 ,  C23C16/46 ,  C30B25/10 ,  C30B33/12 ,  C30B35/00 ,  F27D7/02 ,  F27D7/06 ,  F27D2007/066 ,  F27D2019/0028 ,  H01L21/67109 ,  H01L21/68742

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber providing an inner space in which a process with respect to a substrate is performed, a heating plate on which the substrate is placed, the heating plate being fixedly disposed within the chamber, a heater spaced from a lower portion of the heating plate to heat the heating plate, and a lift module lifting the heater.

公开(公告)号：US09580832B2

公开(公告)日：2017-02-28

申请号：US14519159

申请日：2014-10-21

申请人： Siemens Medical Solutions USA, Inc.

发明人： Mark S. Andreaco ,  Troy Marlar ,  Brant Quinton

IPC分类号： C30B35/00 ,  C30B15/30 ,  C30B15/32 ,  C30B13/28 ,  C30B29/06

CPC分类号： C30B15/30 ,  C30B13/285 ,  C30B15/32 ,  C30B29/06 ,  C30B35/00 ,  Y10T117/1032 ,  Y10T117/1072

摘要： A pulling head for a crystal growth furnace. The pulling head includes a servomotor and a rotatable housing attached to the servomotor, wherein the housing includes first, second, third and fourth housing magnets. The pulling head also includes a shaft attached to a scale and a connection device having first and second connection magnets. The first connection magnet is arranged between the first and second housing magnets to generate first and second magnetic repulsion forces and the second connection magnet is arranged between the third and fourth housing magnets to generate third and fourth magnetic repulsion forces. A rotation coupling is attached between the shaft and the connection device wherein the scale weighs the shaft, rotation coupling and the connection device. The servomotor rotates the housing and rotation of the housing is transmitted by the magnetic repulsion forces to the connection device to rotate the connection device.

摘要翻译： 用于晶体生长炉的拉头。 牵引头包括伺服电动机和连接到伺服电动机的可旋转壳体，其中壳体包括第一，第二，第三和第四壳体磁体。 牵引头还包括附接到秤的轴和具有第一和第二连接磁体的连接装置。 第一连接磁体布置在第一和第二壳体磁体之间以产生第一和第二磁性排斥力，并且第二连接磁体布置在第三和第四壳体磁体之间以产生第三和第四磁性排斥力。 旋转联轴器安装在轴和连接装置之间，其中秤称重轴，旋转联接器和连接装置。 伺服电动机旋转壳体并且壳体的旋转通过磁力排斥力传递到连接装置以旋转连接装置。

公开(公告)号：US09546435B2

公开(公告)日：2017-01-17

申请号：US14322127

申请日：2014-07-02

申请人： NuFlare Technology, Inc.

发明人： Takumi Yamada ,  Yuusuke Sato

IPC分类号： C30B25/16 ,  C30B35/00 ,  C30B29/40

CPC分类号： C30B25/165 ,  C30B29/403 ,  C30B35/00

摘要： A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a gas supply path connected to an organic metal supply source at a first connection, the gas supply path being connected to a carrier gas supply source, the gas supply path supplies a process gas including organic metal and a carrier gas into the reaction chamber; a gas discharge path connected to the organic metal supply source at a second connection, the gas discharge path discharges the process gas to the outside of the apparatus; a first mass flow controller and a first adjustment device provided at the gas supply path; a second adjustment device provided at the gas discharge path; and a shortcut path connecting the gas supply path to the gas discharge path. One of the first and the second adjustment device is a back pressure regulator, and the other is a mass flow controller.

摘要翻译： 实施方案的气相生长装置包括：反应室; 在第一连接处与有机金属供给源连接的气体供给路径，所述气体供给路径与载气供给源连接，所述气体供给路径向所述反应室供给包含有机金属和载气的处理气体， 在第二连接处连接到有机金属供应源的气体放电路径，气体放电路径将处理气体排放到设备的外部; 设置在所述气体供给路径处的第一质量流量控制器和第一调整装置; 设置在气体排出路径处的第二调节装置; 以及将气体供给路径连接到气体排出路径的快捷路径。 第一和第二调节装置之一是背压调节器，另一个是质量流量控制器。