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    Method for Producing a Micromechanical Component, and Corresponding Micromechanical Component
    11.
    发明申请
    Method for Producing a Micromechanical Component, and Corresponding Micromechanical Component 有权
    微机械部件的生产方法和相应的微机械部件

    公开(公告)号：US20160023895A1

    公开(公告)日：2016-01-28

    申请号：US14774799

    申请日：2014-03-12

    Applicant: ROBERT BOSCH GMBH

    Inventor： Friedjof Heuck ,  Christoph Schelling

    IPC: B81C1/00

    CPC classification number: B81C1/00619 ,  B81C1/00412 ,  B81C2201/0177 ,  B81C2201/0188

    Abstract: A method for producing a micromechanical component includes providing a substrate with a monocrystalline starting layer which is exposed in structured regions. The structured regions have an upper face and lateral flanks, wherein a catalyst layer, which is suitable for promoting a silicon epitaxial growth of the exposed upper face of the structured monocrystalline starting layer, is provided on the upper face, and no catalyst layers are provided on the flanks. The method also includes carrying out a selective epitaxial growth process on the upper face of the monocrystalline starting layer using the catalyst layer in a reactive gas atmosphere in order to form a micromechanical functional layer.

    Abstract translation: 微机械部件的制造方法包括向基板提供暴露在结构化区域中的单晶起始层。 结构化区域具有上表面和侧面，其中在上表面上设置适合于促进结构单晶起始层暴露的上表面的硅外延生长的催化剂层，并且不提供催化剂层 在侧面。 该方法还包括在反应气体气氛中使用催化剂层在单晶起始层的上表面上进行选择性外延生长工艺，以形成微机械功能层。

    METHOD OF FORMING DEPOSITED PATTERNS ON A SURFACE
    12.
    发明申请
    METHOD OF FORMING DEPOSITED PATTERNS ON A SURFACE 有权
    在表面形成沉积图案的方法

    公开(公告)号：US20150162479A1

    公开(公告)日：2015-06-11

    申请号：US14100048

    申请日：2013-12-09

    Applicant: Raytheon Company

    Inventor： Roland Gooch ,  Thomas Allan Kocian ,  Buu Diep ,  Adam M. Kennedy ,  Stephen H. Black

    IPC: H01L31/18 ,  H01L31/0232

    CPC classification number: H01L31/18 ,  B81C1/00373 ,  B81C2201/0188 ,  H01L31/02327

    Abstract: A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities, each cavity having outer, peripheral sidewalls extending outwardly from the surface. The method includes: providing a structure having a release agent thereon; contacting top surface of the wafer with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure; the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.

    Abstract translation: 一种用于在具有多个空腔的基板的表面的选定部分上形成材料涂层的方法，每个空腔具有从表面向外延伸的外部周边侧壁。 该方法包括：提供其上具有脱模剂的结构; 使所述晶片的顶表面与所述脱模剂接触以将所述脱模剂的部分转移到所述晶片的顶表面，同时所述空腔的底部保持与所述脱模剂间隔开以产生中间结构; 所述脱模剂设置在所述晶片的顶表面上，并且所述空腔的底部部分脱离所述脱模剂; 将所述中间结构暴露于所述材料以在所述空腔的所述脱模剂和所述底部两者上均匀地涂覆所述材料; 并且与涂料一起选择性地除去脱模剂，同时将涂料留在空腔的底部。

    Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures
    15.
    发明授权
    Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures 有权
    具有电介质或活性碱的电化学制造结构以及用于制造这种结构的方法和装置

    公开(公告)号：US07250101B2

    公开(公告)日：2007-07-31

    申请号：US10434493

    申请日：2003-05-07

    Applicant: Jeffrey A. Thompson ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley

    Inventor： Jeffrey A. Thompson ,  Adam L. Cohen ,  Michael S. Lockard ,  Dennis R. Smalley

    IPC: C25D1/00 ,  C25D5/02 ,  C25D5/48 ,  C25D5/52

    CPC classification number: B81C1/00126 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0181 ,  B81C2201/0188 ,  B81C2201/019

    Abstract: Multilayer structures are electrochemically fabricated on a temporary (e.g. conductive) substrate and are thereafter bonded to a permanent (e.g. dielectric, patterned, multi-material, or otherwise functional) substrate and removed from the temporary substrate. In some embodiments, the structures are formed from top layer to bottom layer, such that the bottom layer of the structure becomes adhered to the permanent substrate, while in other embodiments the structures are form from bottom layer to top layer and then a double substrate swap occurs. The permanent substrate may be a solid that is bonded (e.g. by an adhesive) to the layered structure or it may start out as a flowable material that is solidified adjacent to or partially surrounding a portion of the structure with bonding occurs during solidification. The multilayer structure may be released from a sacrificial material prior to attaching the permanent substrate or it may be released after attachment.

    Abstract translation: 多层结构在临时的（例如导电的）衬底上电化学地制造，然后在永久（例如电介质，图案化，多材料或其他功能）的衬底上结合并从临时衬底去除。 在一些实施例中，结构由顶层到底层形成，使得结构的底层变得粘附到永久性基底上，而在其它实施例中，结构是从底层到顶层形成的，然后是双层衬底交换 发生。 永久性基材可以是与层状结构结合的固体（例如通过粘合剂），或者可以作为在凝固期间发生结合而在结构的一部分附近凝固的可流动材料开始。 多层结构可以在附着永久性基底之前从牺牲材料上释放，或者在附着后可以释放多层结构。

    Method for selective deposition of materials in micromachined molds
    16.
    发明申请
    Method for selective deposition of materials in micromachined molds 失效
    在微加工模具中选择性沉积材料的方法

    公开(公告)号：US20020142587A1

    公开(公告)日：2002-10-03

    申请号：US09871200

    申请日：2001-05-31

    Inventor： Mark G. Allen ,  Cros Florent ,  Jin-Woo Park ,  Kim Kieun

    IPC: H01L021/4763

    CPC classification number: B81C99/009 ,  B81C2201/0188

    Abstract: Methods for creating one or more structures in a micromachined device. In one arrangement, the methods include the steps of providing a substrate, forming upstanding nonconductive mold walls on the substrate so that first and second wells are formed, the second well being wider than the first well. The method further includes applying a first material to the surface of the wells so that the first well fills with the first material before the second well, and removing the first material from the second well while leaving a portion in the first well.

    Abstract translation: 在微加工设备中创建一个或多个结构的方法。 在一种布置中，所述方法包括提供基底的步骤，在基底上形成直立的非导电模壁，使得形成第一和第二孔，第二阱比第一孔更宽。 该方法还包括将第一材料施加到孔的表面，使得第一阱在第二阱之前填充第一材料，以及在第一阱中留下一部分的同时从第二阱中移除第一材料。

    OPEN CAVITY PACKAGE USING CHIP-EMBEDDING TECHNOLOGY
    20.
    发明申请
    OPEN CAVITY PACKAGE USING CHIP-EMBEDDING TECHNOLOGY 有权
    使用芯片嵌入技术的开放封装

    公开(公告)号：US20170015548A1

    公开(公告)日：2017-01-19

    申请号：US14963362

    申请日：2015-12-09

    Applicant: Texas Instruments Incorporated

    Inventor： Jie Mao ,  Hau Nguyen ,  Luu Nguyen ,  Anindya Poddar

    IPC: B81C1/00 ,  B81B7/00

    CPC classification number: B81C1/00873 ,  B81B7/007 ,  B81B2201/0214 ,  B81B2201/0235 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2201/0292 ,  B81B2201/047 ,  B81B2207/07 ,  B81B2207/098 ,  B81C1/00333 ,  B81C2201/0125 ,  B81C2201/0132 ,  B81C2201/0159 ,  B81C2201/0181 ,  B81C2201/0188 ,  B81C2203/0136 ,  H01L21/561 ,  H01L21/568 ,  H01L21/6836 ,  H01L23/3121 ,  H01L24/19 ,  H01L2221/68359 ,  H01L2224/04105 ,  H01L2224/96 ,  H01L2924/3511

    Abstract: A method for fabricating packaged semiconductor devices (100) with an open cavity (110a) in panel format; placing (process 201) on an adhesive carrier tape a panel-sized grid of metallic pieces having a flat pad (230) and symmetrically placed vertical pillars (231); attaching (process 202) semiconductor chips (101) with sensor systems face-down onto the tape; laminating (process 203) and thinning (process 204) low CTE insulating material (234) to fill gaps between chips and grid; turning over (process 205) assembly to remove tape; plasma-cleaning assembly front side, sputtering and patterning (process 206) uniform metal layer across assembly and optionally plating (process 209) metal layer to form rerouting traces and extended contact pads for assembly; laminating (process 212) insulating stiffener across panel; opening (process 213) cavities in stiffener to access the sensor system; and singulating (process 214) packaged devices by cutting metallic pieces.

    Abstract translation: 一种以面板格式制造具有开口腔（110a）的封装半导体器件（100）的方法; 将具有平垫（230）和对称放置的垂直柱（231）的金属片的面板尺寸网格放置（处理201）在粘合剂载带上。 将具有传感器系统的半导体芯片（工艺202）面朝下地附接到带上; 层压（工艺203）和减薄（工艺204）低CTE绝缘材料（234）以填充芯片和网格之间的间隙; 翻转（过程205）组装以去除胶带; 等离子体清洁组件正面，溅射和图案化（工艺206）跨组合均匀的金属层和任选的电镀（工艺209）金属层以形成重新布线迹线和扩展的接触垫用于组装; 层压（工艺212）跨板的绝缘加强件; 在加强件中打开（过程213）空腔以接近传感器系统; 并通过切割金属片来分割（处理214）包装的装置。

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