摘要:
A crystal-growing furnace system with an emergent pressure-release arrangement includes an isolated chamber and a furnace upper body. The top board is provided with an opening and three first guides, and the furnace upper body with a lower opening and three second guides, wherein the lower opening of the furnace upper body covers, correspondingly, on the opening of the top board. In case a crystal-growing furnace, combined oppositely by the furnace upper body and the furnace lower body, has an over-high internal pressure, the pressure will overcome the weight of, and lift up the furnace upper body. At this moment, the furnace upper body will slightly move upward and away from enclosing the furnace lower body, so that the over-high internal pressure in the furnace will be released immediately to prevent the furnace from being exploded and from resulting in public accidents.
摘要:
An electrode anchoring structure in a crystal-growing furnace includes at least one graphite electrode pillar, at least one metal electrode pillar, at least one anchoring base, and at least one locking nut, wherein the graphite electrode pillar is engaged with a nut base of the metal electrode pillar, and the at least one metal electrode pillar is, through the anchoring base, is secured to furnace wall. Therefore, the at least one graphite electrode pillar acts both as weight support and electrical-conducting electrode. Since the flange welded on furnace wall has a greater area exposed to the atmosphere, a desirable cooling effect can be achieved, and temperature drop can be expedited if water spray is performed. The anchoring base is provided with a resilient washer, such that a resilient force can be employed to adjust loading of each graphite electrode pillar in an axial direction.
摘要:
A crystal-growing furnace system includes an isolated chamber, a furnace upper body, and a controller room, wherein the isolated chamber and the controller room are arrayed and isolated from each other. A door is provided between the controller room and the isolated chamber so as to isolate or communicate the controller room from or with the isolated chamber. The isolated chamber includes, among others, a top board, a furnace lower body, and a lifting device, wherein the lifting device moves the furnace lower body upward and closes the furnace upper body so as to form an enclosed crystal-growing furnace, or downward and departs from the furnace upper body. Because the isolated chamber and the controller room are arranged isolating from each other, noise, high temperature, and dust pollution can be isolated from the isolated room, so that personnel working in the controller room can be assured of safety and health. Moreover, since the furnace upper body is arranged outside of the isolated chamber, heat can be transpired directly to the atmosphere, without the need of huge air conditioning devices for cooling factory, and thus having merits both on energy saving and safety.
摘要:
A crystal-growing furnace with a convectional cooling structure includes a furnace body, a heating room, and at least one heater. The heating room is accommodated in the furnace body, and includes an upper partition, a plurality of side partitions, and a lower partition. The upper partition is provided with an upper opening, and the lower partition with a central opening. Further, the heating room is provided with an upper door, a lower door, an upper driver, and a lower driver. When silicon slurry is to be cooled and solidified, cooling gaseous stream flows into a lower portion of the heating room through the central opening. Then the upper opening is opened by the upper door which is driven by the upper driver, so that heated gaseous stream is discharged from the upper opening and flows downward along furnace inside wall, and flows back to the heating room from the central opening. Therefore, an automatic convectional circulating cooling flow field can be formed, such that the silicon slurry can be cooled quickly with time saved and production efficiency improved. Further, in the process of cooling and crystal growing from the silicon slurry, solidification and crystallization start from bottom to upward of the silicon slurry, such that inner stress and corner fracture may not be occurred to the silicon crystal ingots, and that a desirable quality of the silicon crystal ingots can be obtained.
摘要:
A grinding mechanism includes a rotating body, a first grinding wheel, a second grinding wheel, a first fastening means, a second fastening means, and a spacer assembly, a first fastening means passing through the first body portion and fastening into the rotating body, a second grinding wheel including a second body portion and a second grinding portion. The first and the second grinding portions have different diameter from each other, and are spaced from each other axially, and have different grinding precisions. The spacer assembly is interposed between the first grinding wheel and the second grinding wheel. The second fastening means passes through the second body portion and the spacer assembly, and threadedly fastens into the first body portion, so as to press and secure the second body portion and the spacer assembly against and on the first body portion.
摘要:
A crystal-growing furnace with a convectional cooling structure includes a furnace body, a heating room, and at least one heater. The heating room is accommodated in the furnace body, and includes an upper partition, a plurality of side partitions, and a lower partition. The upper partition is provided with an upper opening, and the lower partition with a central opening. Further, the heating room is provided with an upper door, a lower door, an upper driver, and a lower driver. When silicon slurry is to be cooled and solidified, cooling gaseous stream flows into a lower portion of the heating room through the central opening. Then the upper opening is opened by the upper door which is driven by the upper driver, so that heated gaseous stream is discharged from the upper opening and flows downward along furnace inside wall, and flows back to the heating room from the central opening. Therefore, an automatic convectional circulating cooling flow field can be formed, such that the silicon slurry can be cooled quickly with time saved and production efficiency improved. Further, in the process of cooling and crystal growing from the silicon slurry, solidification and crystallization start from bottom to upward of the silicon slurry, such that inner stress and corner fracture may not be occurred to the silicon crystal ingots, and that a desirable quality of the silicon crystal ingots can be obtained.
摘要:
A cooling structure for the body of a crystal-growing furnace includes an upper body and a lower body. The upper body includes an outer upper shell and an inner upper shell, wherein an upper enclosing space is formed between the outer upper shell and the inner upper shell. The lower body includes an outer lower shell and an inner lower shell, wherein a lower enclosing space is formed between the outer lower shell and the inner lower shell. A plurality of water pipes are arranged, respectively, around the upper and the lower enclosing spaces, wherein plural spraying holes are provided on each of the water pipes. With the help of a pump, water from an outside water source is drawn through the spraying holes of the water pipes so as to cool down the body of the crystal-growing furnace. In adding an exhaust fan, warm air in the upper enclosing spaces can be driven out speedily. Further, in the upper and the lower enclosing spaces there are provided with emergent water pipes for showering more additional water to cool the body of the crystal-growing furnace in case of emergency such that further disaster can be avoided.