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    Production of caprolactam from carbohydrate-containing materials
    12.
    发明授权
    Production of caprolactam from carbohydrate-containing materials 有权
    从含碳水化合物的材料生产己内酰胺

    公开(公告)号：US09181194B2

    公开(公告)日：2015-11-10

    申请号：US13434756

    申请日：2012-03-29

    申请人： Vincent J. Murphy ,  Eric L. Dias ,  James A. W. Shoemaker ,  Thomas R. Boussie ,  Zachary M. Fresco

    发明人： Vincent J. Murphy ,  Eric L. Dias ,  James A. W. Shoemaker ,  Thomas R. Boussie ,  Zachary M. Fresco

    IPC分类号： C07D223/10 ,  C07C227/16 ,  C07C231/02 ,  C07C231/12 ,  C08G69/16

    CPC分类号： C07D223/10 ,  C07C227/16 ,  C07C231/02 ,  C07C231/12 ,  C08G69/16 ,  C07C233/47 ,  C07C229/08

    摘要： The present invention generally relates to processes for the conversion of glucose to caprolactam employing chemocatalytic oxidation and reduction reactions. The present invention also includes processes for the conversion of glucose to caprolactam via amido polyhydroxy acid products and amidocaproic acid or derivatives thereof. The present invention also includes processes that catalytically oxidize an amidopolyol to amidopolyhydroxy acid or derivatives thereof, and processes that catalytically hydrodeoxygenate amino or amido polyhydroxy acid or derivatives thereof to an amino or amidocaproic acid product. The amino or amidocaproic acid product may then be converted to caprolactam. The present invention also includes products produced by such processes and products producable from such products.

    摘要翻译： 本发明一般涉及使用化学催化氧化和还原反应将葡萄糖转化成己内酰胺的方法。 本发明还包括通过酰氨基多羟基酸产物和酰胺基己酸或其衍生物将葡萄糖转化成己内酰胺的方法。 本发明还包括催化氧化脒基多酸至多羟基酸或其衍生物的方法，以及将氨基或酰胺多羟基酸或其衍生物催化加氢脱氧至氨基或酰胺基己酸产物的方法。 然后将氨基或酰胺基己酸产物转化成己内酰胺。 本发明还包括通过这些方法生产的产品和可从这些产品生产的产品。

    Adipic acid compositions
    14.
    发明授权
    Adipic acid compositions 有权
    己二酸组成

    公开(公告)号：US08669393B2

    公开(公告)日：2014-03-11

    申请号：US12966783

    申请日：2010-12-13

    申请人： Thomas R. Boussie ,  Eric L. Dias ,  Zachary M. Fresco ,  Vincent J. Murphy ,  James Shoemaker ,  Raymond Archer ,  Hong Jiang

    发明人： Thomas R. Boussie ,  Eric L. Dias ,  Zachary M. Fresco ,  Vincent J. Murphy ,  James Shoemaker ,  Raymond Archer ,  Hong Jiang

    IPC分类号： C07C69/74

    CPC分类号： C07C255/04 ,  C07D223/10 ,  C08G63/00

    摘要： Disclosed are compositions of matter comprising an adipic acid product of formula (1) wherein R is independently a salt-forming ion, hydrogen, hydrocarbyl, or substituted hydrocarbyl, and at least one constituent selected from the group consisting of formula (2) wherein R is as defined above and each of R1 is, independently, H, OH, acyloxy or substituted acyloxy provided, however, that at least one of R1 is OH, and formula (3) wherein R is as above defined and R1 is OH, acyloxy or substituted acyloxy. Also disclosed are compositions of matter comprising at least about 99 wt % adipic acid and least two constituents selected from the group consisting of formula (2) and formula (3), above.

    摘要翻译： 公开了包含式（1）的己二酸产物的组合物，其中R独立地为成盐离子，氢，烃基或取代的烃基，以及选自式（2）的至少一种成分，其中R R 1独立地是H，OH，酰氧基或取代的酰氧基，然而，R 1中的至少一个是OH，和式（3）其中R如上所定义，R 1是OH，酰氧基 或取代的酰氧基。 还公开了包含至少约99重量％己二酸和至少两种选自上述式（2）和式（3）的组分的物质组合物。

    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    16.
    发明授权
    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
    在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层

    公开(公告)号：US08343866B2

    公开(公告)日：2013-01-01

    申请号：US13251952

    申请日：2011-10-03

    申请人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    发明人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76829 ,  B82Y30/00 ,  H01L21/02183 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76849

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions the masking layer inhibits formation of capping layer material on the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case, capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive, a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在导电区域之后形成覆盖层时，掩模层阻止在电介质区域上形成覆盖层材料。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一种情况下，形成在电介质区域上的覆盖层材料随后可以被去除，从而确保覆盖层材料仅在导电区域上形成。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由导电，半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺，例如无电沉积，化学气相沉积，物理气相沉积或原子层沉积 。

    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region
    18.
    发明授权
    Formation of a masking layer on a dielectric region to facilitate formation of a capping layer on electrically conductive regions separated by the dielectric region 有权
    在电介质区域上形成掩模层，以便在由电介质区域分隔的导电区域上形成覆盖层

    公开(公告)号：US07749881B2

    公开(公告)日：2010-07-06

    申请号：US11132841

    申请日：2005-05-18

    申请人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    发明人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76829 ,  B82Y30/00 ,  H01L21/02183 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76849

    摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions of the electronic device that are separated by the dielectric region, the masking layer inhibits formation of capping layer material on or in the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case (particularly in the latter), capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive material (e.g., a cobalt alloy, a nickel alloy, tungsten, tantalum, tantalum nitride), a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

    摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在随后在由电介质区域分离的电子器件的导电区域上形成覆盖层时，掩模层阻止在其上形成覆盖层材料 在电介质区域。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一情况下（特别是在后者中），可以随后去除在电介质区域上形成的覆盖层材料，从而确保覆盖层材料仅在导电区域上形成。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由导电材料（例如，钴合金，镍合金，钨，钽，氮化钽），半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括 常规沉积工艺如无电沉积，化学气相沉积，物理气相沉积或原子层沉积。