公开(公告)号：US20190131399A1

公开(公告)日：2019-05-02

申请号：US15797703

申请日：2017-10-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Su-Hao LIU ,  Huicheng CHANG ,  Chia-Cheng CHEN ,  Liang-Yin CHEN ,  Kuo-Ju CHEN ,  Chun-Hung WU ,  Chang-Miao Liu ,  Huai-Tei Yang ,  Lun-Kuang Tan ,  Wei-Ming You

IPC: H01L29/08 ,  H01L29/167 ,  H01L29/78 ,  H01L21/265 ,  H01L21/285 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/0847 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/26513 ,  H01L21/28518 ,  H01L29/167 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: The present disclosure relates generally to doping for conductive features in a semiconductor device. In an example, a structure includes an active region of a transistor. The active region includes a source/drain region, and the source/drain region is defined at least in part by a first dopant having a first dopant concentration. The source/drain region further includes a second dopant with a concentration profile having a consistent concentration from a surface of the source/drain region into a depth of the source/drain region. The consistent concentration is greater than the first dopant concentration. The structure further includes a conductive feature contacting the source/drain region at the surface of the source/drain region.

公开(公告)号：US20200266299A1

公开(公告)日：2020-08-20

申请号：US16869819

申请日：2020-05-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Cheng CHEN ,  Su-Hao LIU ,  Kuo-Ju CHEN ,  Liang-Yin CHEN

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L27/088 ,  H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L21/223

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an epitaxial structure over a semiconductor substrate. The method also includes generating and applying plasma on an entire exposed surface of the epitaxial structure to form a modified region in the epitaxial structure. The plasma is directly applied on the source/drain structure without being filtered out, and the plasma includes ions with different charges. The method further includes forming a metal layer on the modified region and heating the metal layer and the modified region to form a metal-semiconductor compound region.