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    CARBON NANOTUBE-BASED LOAD CELLS
    11.
    发明申请
    CARBON NANOTUBE-BASED LOAD CELLS 有权
    基于碳纳米管的负载细胞

    公开(公告)号：US20100050779A1

    公开(公告)日：2010-03-04

    申请号：US12201242

    申请日：2008-08-29

    Applicant: Victor L. Pushparaj ,  Omkaram Nalamasu ,  Manoocher Birang

    Inventor： Victor L. Pushparaj ,  Omkaram Nalamasu ,  Manoocher Birang

    IPC: G01B7/16 ,  H01L49/00 ,  H01L21/66

    CPC classification number: G01L1/20 ,  G01L1/18 ,  G01L5/0076 ,  Y10S977/953 ,  Y10S977/956

    Abstract: A robust, stand-alone load cell comprises a block of aligned carbon nanotubes with parallel electrodes on opposing sides of the block and an electrical circuit connected between the electrodes for measuring the electrical resistance of the block. The nanotubes are preferably aligned perpendicular to the electrodes. Carbon nanotube-based load cells may be incorporated into a wafer asssembly for characterizing semiconductor processing equipment. Such a wafer assembly includes two parallel wafers with a plurality of carbon nanotube load cells positioned between and attached to both wafers. The load cells are independently electrically connected to a device which monitors and records the resistivity of the load cell. According to further aspects of the invention, each of the load cell's parallel electrodes may be comprised of many small electrodes, where each small electrode on one side of the block has a corresponding small electrode on the opposing side of the block; corresponding pairs of small electrodes are connected in series to form a chain; an electrical circuit, connected to both ends of the chain of opposing pairs of electrodes, is used to measure the electrical resistance of the chain.

    Abstract translation: 坚固的独立测力传感器包括在块的相对侧上具有平行电极的对准碳纳米管块和连接在电极之间的用于测量块的电阻的电路。 纳米管优选垂直于电极取向。 可以将碳纳米管基称重传感器结合到用于表征半导体处理设备的晶片组件中。 这种晶片组件包括两个平行的晶片，其中多个碳纳米管负载单元位于两个晶片之间并附着在两个晶片上。 称重传感器独立地电连接到监测和记录称重传感器的电阻率的装置。 根据本发明的另外的方面，每个负载传感器的平行电极可以由许多小电极组成，其中块的一侧上的每个小电极在块的相对侧具有相应的小电极; 相应的一对小电极串联连接形成链条; 连接到相对电极对的链的两端的电路用于测量链的电阻。

    Data processing for monitoring chemical mechanical polishing
    12.
    发明授权
    Data processing for monitoring chemical mechanical polishing 有权
    数据处理用于监测化学机械抛光

    公开(公告)号：US07500901B2

    公开(公告)日：2009-03-10

    申请号：US11222561

    申请日：2005-09-08

    Applicant: Boguslaw A. Swedek ,  Nils Johansson ,  Manoocher Birang

    Inventor： Boguslaw A. Swedek ,  Nils Johansson ,  Manoocher Birang

    IPC: B24B49/00 ,  B24B51/00

    CPC classification number: B24B37/013 ,  B24B49/10

    Abstract: Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.

    Abstract translation: 实施用于监测抛光衬底的技术的方法和装置。 获取两个或多个数据点，其中每个数据点具有受传感器感测区域内的特征影响的值，并且对应于感测区域穿过衬底的衬底和传感器的相对位置。 一组参考点用于修改采集的数据点。 该修改补偿由穿过衬底的感测区域引起的所获取的数据点中的失真。 基于修改的数据点，评估基板的局部特性以监测抛光。

    System and method for in-line metal profile measurement
    17.
    发明申请
    System and method for in-line metal profile measurement 审中-公开
    在线金属型材测量的系统和方法

    公开(公告)号：US20060246822A1

    公开(公告)日：2006-11-02

    申请号：US11479299

    申请日：2006-06-29

    Applicant: Boguslaw Swedek ,  Nils Johansson ,  Andreas Wiswesser ,  Manoocher Birang

    Inventor： Boguslaw Swedek ,  Nils Johansson ,  Andreas Wiswesser ,  Manoocher Birang

    IPC: B24B51/00 ,  B24B7/30 ,  B24B29/00

    CPC classification number: B24B37/345 ,  B24B37/005 ,  B24B49/105 ,  G01B7/105 ,  H01L21/67219 ,  H01L22/12

    Abstract: A system includes a measuring station for positioning an eddy current probe proximate to a substrate in a substrate holder. The probe can produce a time-varying magnetic field, in order to induce eddy currents in one or more conductive regions of a substrate either prior to or subsequent to polishing. The eddy current signals are detected, and may be used to update one or more polishing parameters for a chemical mechanical polishing system. The substrate holder may be located in a number places; for example, in a substrate transfer system, a factory interface module, a cleaner, or in a portion of the chemical mechanical polishing system away from the polishing stations. Additional probes may be used.

    Abstract translation: 一种系统包括用于将涡流探针靠近衬底保持器中的衬底定位的测量站。 探针可以产生时变磁场，以便在抛光之前或之后在衬底的一个或多个导电区域中引起涡流。 检测涡流信号，并可用于更新化学机械抛光系统的一个或多个抛光参数。 衬底保持器可以位于多个位置; 例如，在基板传送系统，工厂接口模块，清洁器或化学机械抛光系统的远离抛光站的一部分中。 可以使用附加的探针。

    Polishing system with in-line and in-situ metrology
    19.
    发明授权
    Polishing system with in-line and in-situ metrology 有权
    具有在线和原位计量的抛光系统

    公开(公告)号：US07101251B2

    公开(公告)日：2006-09-05

    申请号：US11166022

    申请日：2005-06-23

    Applicant: Boguslaw A. Swedek ,  Bret W. Adams ,  Sanjay Rajaram ,  David A. Chan ,  Manoocher Birang

    Inventor： Boguslaw A. Swedek ,  Bret W. Adams ,  Sanjay Rajaram ,  David A. Chan ,  Manoocher Birang

    IPC: B24B49/00 ,  B24B51/00 ,  B24B1/00

    CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  B24B51/00 ,  H01L22/26

    Abstract: A computer program product for process control in chemical mechanical polishing is described. The product includes instructions to cause a processor to receive a measurement of an initial pre-polishing thickness of a layer of a substrate from a metrology station, determine a value for a parameter of an endpoint algorithm from the initial thickness of the substrate, receive a monitoring signal generated from monitoring in-situ polishing of the substrate, process the monitoring signal to detect a signal feature indicating a final or intermediate endpoint and send instructions to stop polishing when an endpoint criterion is detected using the endpoint algorithm with the determined value for the parameter.

    Abstract translation: 描述了用于化学机械抛光中的过程控制的计算机程序产品。 该产品包括使得处理器从测量站接收基底层的初始预抛光厚度的测量的指令，从衬底的初始厚度确定端点算法的参数的值，接收 通过监测衬底的原位抛光产生的监测信号，处理监控信号以检测指示最终或中间端点的信号特征，并且当使用具有确定的值的端点算法检测到端点标准时，发送指令停止抛光 参数。

    Chemical mechanical polishing control system and method
    20.
    发明授权
    Chemical mechanical polishing control system and method 有权
    化学机械抛光控制系统及方法

    公开(公告)号：US07074109B1

    公开(公告)日：2006-07-11

    申请号：US10920701

    申请日：2004-08-17

    Applicant: Doyle E Bennett ,  Jeffrey Drue David ,  Manoocher Birang ,  Jimin Zhang ,  Boguslaw A Swedek

    Inventor： Doyle E Bennett ,  Jeffrey Drue David ,  Manoocher Birang ,  Jimin Zhang ,  Boguslaw A Swedek

    IPC: B24B49/00

    CPC classification number: H01L21/3212 ,  B24B37/013 ,  B24B49/00 ,  H01L22/26

    Abstract: A system, method, and computer program product for chemical mechanical polishing a substrate in which initially a plurality of predetermined pressures are applied to a plurality of regions of the substrate. A plurality of portions of the substrate are monitored during polishing with an in-situ monitoring system. If the difference in thickness between two portions of the substrate exceeds a predetermined threshold, a plurality of adjusted pressures are calculated in a closed-loop control system, and the plurality of adjusted pressures are applied to the plurality of regions of the substrate. The predetermined threshold includes an initial threshold for the start of the polishing process and a second threshold for a period of polishing after the start of the polishing process.

    Abstract translation: 一种用于化学机械抛光衬底的系统，方法和计算机程序产品，其中最初将多个预定压力施加到衬底的多个区域。 在用原位监测系统进行抛光时监测基板的多个部分。 如果基板的两个部分之间的厚度差超过预定阈值，则在闭环控制系统中计算多个调节压力，并且将多个调节压力施加到基板的多个区域。 预定阈值包括用于开始抛光处理的初始阈值和在抛光过程开始之后的抛光周期的第二阈值。

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