公开(公告)号：US09443907B2

公开(公告)日：2016-09-13

申请号：US14793167

申请日：2015-07-07

Applicant: SanDisk 3D LLC

Inventor： Peter Rabkin ,  Masaaki Higashitani

IPC: H01L27/24 ,  H01L21/02 ,  H01L27/12 ,  G11C13/00 ,  H01L29/786 ,  H01L45/00 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L27/2454 ,  G11C13/0026 ,  G11C13/003 ,  G11C13/0033 ,  G11C2213/71 ,  G11C2213/77 ,  H01L21/02403 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/2481 ,  H01L27/249 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/7869 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1226 ,  H01L45/1266 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/16

Abstract: A 3D memory array having a vertically oriented thin film transistor (TFT) selection device that has a body formed from a wide energy band gap semiconductor is disclosed. The wide energy band gap semiconductor may be an oxide semiconductor, such as a metal oxide semiconductor. As examples, this could be an InGaZnO, InZnO, HfInZnO, or ZnInSnO body. The source and drains can also be formed from the wide energy band gap semiconductor, although these may be doped for better conduction. The vertically oriented TFT selection device serves as a vertical bit line selection device in the 3D memory array. A vertical TFT select device has a high drive current, a high breakdown voltage and low leakage current.

公开(公告)号：US20150311256A1

公开(公告)日：2015-10-29

申请号：US14793167

申请日：2015-07-07

Applicant: SanDisk 3D LLC

Inventor： Peter Rabkin ,  Masaaki Higashitani

IPC: H01L27/24 ,  H01L29/786 ,  H01L45/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L27/2454 ,  G11C13/0026 ,  G11C13/003 ,  G11C13/0033 ,  G11C2213/71 ,  G11C2213/77 ,  H01L21/02403 ,  H01L21/02565 ,  H01L27/124 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/2481 ,  H01L27/249 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/7869 ,  H01L45/06 ,  H01L45/08 ,  H01L45/085 ,  H01L45/10 ,  H01L45/1226 ,  H01L45/1266 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/16

Abstract: A 3D memory array having a vertically oriented thin film transistor (TFT) selection device that has a body formed from a wide energy band gap semiconductor is disclosed. The wide energy band gap semiconductor may be an oxide semiconductor, such as a metal oxide semiconductor. As examples, this could be an InGaZnO, InZnO, HfInZnO, or ZnInSnO body. The source and drains can also be formed from the wide energy band gap semiconductor, although these may be doped for better conduction. The vertically oriented TFT selection device serves as a vertical bit line selection device in the 3D memory array. A vertical TFT select device has a high drive current, a high breakdown voltage and low leakage current.

Abstract translation: 公开了具有由宽能带隙半导体形成的主体的垂直取向的薄膜晶体管（TFT）选择装置的3D存储器阵列。 宽能带隙半导体可以是诸如金属氧化物半导体的氧化物半导体。 例如，这可以是InGaZnO，InZnO，HfInZnO或ZnInSnO体。 源极和漏极也可以由宽能带隙半导体形成，尽管这些可以被掺杂以便更好地传导。 垂直取向的TFT选择装置用作3D存储器阵列中的垂直位线选择装置。 垂直TFT选择装置具有高驱动电流，高击穿电压和低漏电流。